Inventor · disambiguated record
Marianne Germain
Also filed as: GERMAIN MARIANNE
10 granted patents·1 pending application·104 citations·filing 2004–2015
88Inventor score
Top patents by PatentIndex Score
11 records- 0192US8309987B2Enhancement mode semiconductor deviceDERLUYN JOFF·Filed 2009·Granted Nov 13, 2012·33 cites·13 claims
- 0290US7547928B2AlGaN/GaN high electron mobility transistor devicesIMEC INTER UNI MICRO ELECTR·Filed 2005·Granted Jun 16, 2009·22 cites·14 claims
- 0382US8809138B2Method of forming a semiconductor deviceIMEC·Filed 2012·Granted Aug 19, 2014·6 cites·15 claims
- 0482US8399911B2Enhancement mode field effect device and the method of production thereofDERLUYN JOFF·Filed 2007·Granted Mar 19, 2013·11 cites·19 claims
- 0582US7772055B2AlGaN/GaN high electron mobility transistor devicesIMEC·Filed 2009·Granted Aug 10, 2010·9 cites·52 claims
- 0676US7327036B2Method for depositing a group III-nitride material on a silicon substrate and device thereforIMEC INTER UNI MICRO ELECTR·Filed 2004·Granted Feb 5, 2008·19 cites·15 claims
- 0770US9543424B2Method for growing III-V epitaxial layers and semiconductor structureDERLUYN JOFF·Filed 2012·Granted Jan 10, 2017·3 cites·26 claims
- 0861US9847412B2Device comprising a III-N layer stack with improved passivation layer and associated manufacturing methodEPIGAN NV·Filed 2012·Granted Dec 19, 2017·1 cites·27 claims
- 0950US9230803B2Method for growing III-V epitaxial layersDERLUYN JOFF·Filed 2012·Granted Jan 5, 2016·0 cites·11 claims
- 1048US9748331B2Method for growing III-V epitaxial layersEPIGAN NV·Filed 2015·Granted Aug 29, 2017·0 cites·20 claims
- 1145US2013237021A1Enhancement mode field effect device and the method of production thereofIMEC·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →