Inventor · disambiguated record
Joff Derluyn
Also filed as: DERLUYN JOFF
15 granted patents·4 pending applications·107 citations·filing 2005–2022
91Inventor score
Top patents by PatentIndex Score
19 records- 0192US8309987B2Enhancement mode semiconductor deviceDERLUYN JOFF·Filed 2009·Granted Nov 13, 2012·33 cites·13 claims
- 0290US7547928B2AlGaN/GaN high electron mobility transistor devicesIMEC INTER UNI MICRO ELECTR·Filed 2005·Granted Jun 16, 2009·22 cites·14 claims
- 0383US8492261B2Damascene contacts on III-V CMOS devicesVAN HOVE MARLEEN·Filed 2010·Granted Jul 23, 2013·10 cites·19 claims
- 0482US8809138B2Method of forming a semiconductor deviceIMEC·Filed 2012·Granted Aug 19, 2014·6 cites·15 claims
- 0582US8399911B2Enhancement mode field effect device and the method of production thereofDERLUYN JOFF·Filed 2007·Granted Mar 19, 2013·11 cites·19 claims
- 0682US7772055B2AlGaN/GaN high electron mobility transistor devicesIMEC·Filed 2009·Granted Aug 10, 2010·9 cites·52 claims
- 0781US9991346B2Semiconductor structure comprising an active semiconductor layer of the III-V type on a buffer layer stack and method for producing semiconductor structureEPIGAN NV·Filed 2015·Granted Jun 5, 2018·4 cites·19 claims
- 0876US11094812B2High electron mobility transistorSOITEC BELGIUM·Filed 2018·Granted Aug 17, 2021·2 cites·13 claims
- 0970US9543424B2Method for growing III-V epitaxial layers and semiconductor structureDERLUYN JOFF·Filed 2012·Granted Jan 10, 2017·3 cites·26 claims
- 1062US12034068B2High electron mobility transistorSOITEC BELGIUM·Filed 2021·Granted Jul 9, 2024·0 cites·17 claims
- 1162US8062931B2Surface treatment and passivation of AlGaN/GaN HEMTLORENZ ANNE·Filed 2007·Granted Nov 22, 2011·6 cites·25 claims
- 1261US9847412B2Device comprising a III-N layer stack with improved passivation layer and associated manufacturing methodEPIGAN NV·Filed 2012·Granted Dec 19, 2017·1 cites·27 claims
- 1353US2025056858A1Group iii-nitride semiconductor structure on silicon-on-insulator and method of growing thereofSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 1450US9230803B2Method for growing III-V epitaxial layersDERLUYN JOFF·Filed 2012·Granted Jan 5, 2016·0 cites·11 claims
- 1549US2024313101A1Semiconductor structure with barrier layer comprising indium aluminium nitride and method of growing thereofSOITEC BELGIUM·Filed 2022·Application pending·0 cites
- 1648US9748331B2Method for growing III-V epitaxial layersEPIGAN NV·Filed 2015·Granted Aug 29, 2017·0 cites·20 claims
- 1745US2013237021A1Enhancement mode field effect device and the method of production thereofIMEC·Filed 2013·Application pending·0 cites
- 1834US11287249B2Wafer surface curvature determining systemSOITEC BELGIUM·Filed 2018·Granted Mar 29, 2022·0 cites·10 claims
- 1933US2020332438A1A method for forming silicon carbide onto a silicon substrateEPIGAN NV·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →