Inventor · disambiguated record
Jong-Hyoung Lim
Also filed as: LIM JONG-HYOUNG
35 granted patents·4 pending applications·329 citations·filing 1997–2016
97Inventor score
Top patents by PatentIndex Score
39 records- 0186US7184340B2Circuit and method for test mode entry of a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 27, 2007·17 cites·22 claims
- 0283US7397715B2Semiconductor memory device for testing redundancy cellsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 8, 2008·16 cites·21 claims
- 0383US5929696ACircuit for converting internal voltage of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jul 27, 1999·43 cites·12 claims
- 0482US8619484B2Semiconductor device, method of adjusting load capacitance for the same, and semiconductor system including the sameLIM JONG HYOUNG·Filed 2011·Granted Dec 31, 2013·9 cites·15 claims
- 0582US6617885B2Sense amplifiers having gain control circuits therein that inhibit signal oscillationsSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 9, 2003·40 cites·11 claims
- 0679US7612573B2Probe sensing pads and methods of detecting positions of probe needles relative to probe sensing padsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 3, 2009·10 cites·48 claims
- 0777US8987867B2Wafer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Mar 24, 2015·3 cites·16 claims
- 0875US6696860B2Variable voltage data buffersSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 24, 2004·17 cites·39 claims
- 0971US9159398B2Memory core and semiconductor memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Oct 13, 2015·5 cites·20 claims
- 1070US6937534B2Integrated circuit memory device including delay locked loop circuit and delay locked loop control circuit and method of controlling delay locked loop circuitSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 30, 2005·22 cites·28 claims
- 1169US8228736B2Mobile system on chip (SoC) and mobile terminal using the mobile SoC, and method for refreshing a memory in the mobile SoCJOO JAE HOON·Filed 2009·Granted Jul 24, 2012·6 cites·17 claims
- 1269US6111457AInternal power supply circuit for use in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Aug 29, 2000·26 cites·15 claims
- 1366US7639547B2Semiconductor memory device for independently controlling internal supply voltages and method of using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 29, 2009·6 cites·30 claims
- 1466US7391254B2Circuit and method of generating internal supply voltage in semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 24, 2008·6 cites·20 claims
- 1565US7675316B2Semiconductor memory device including on die termination circuit and on die termination method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 9, 2010·5 cites·20 claims
- 1663US8144539B2Semiconductor memory device for self refresh and memory system having the sameLIM JONG HYOUNG·Filed 2009·Granted Mar 27, 2012·5 cites·10 claims
- 1762US6483373B1Input circuit having signature circuits in parallel in semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 19, 2002·12 cites·30 claims
- 1860US7466616B2Bit line sense amplifier and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 16, 2008·4 cites·16 claims
- 1960US6081460AIntegrated circuit devices having voltage level responsive mode-selection circuits therein and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jun 27, 2000·20 cites·20 claims
- 2057US7656741B2Row active time control circuit and a semiconductor memory device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 2, 2010·3 cites·24 claims
- 2157US7646665B2Semiconductor memory device and burn-in test method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 12, 2010·5 cites·17 claims
- 2255US7554866B2Circuit and method of controlling input/output sense amplifier of a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 30, 2009·3 cites·9 claims
- 2354US6822490B2Data output circuit for reducing skew of data signalSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 23, 2004·7 cites·30 claims
- 2453US9053963B2Multiple well bias memorySAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 9, 2015·1 cites·20 claims
- 2552US7054204B2Semiconductor device and method for controlling the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 30, 2006·7 cites·31 claims
- 2649US8015459B2Semiconductor memory device and method of performing a memory operationSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 6, 2011·1 cites·16 claims
- 2748US7657800B2Semiconductor memory device and method of performing a memory operationSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 2, 2010·1 cites·18 claims
- 2847US8411520B2Semiconductor memory device and method of reducing consumption of standby current thereinLEE MYUNG-JAE·Filed 2009·Granted Apr 2, 2013·2 cites·16 claims
- 2943US10431320B2Semiconductor memory device, method of testing the same and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 1, 2019·0 cites·18 claims
- 3043US7747912B2Semiconductor memory device capable of arbitrarily setting the number of memory cells to be tested and related test methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 29, 2010·1 cites·15 claims
- 3142US6087887ASignal routing circuits having selective high impedance and low impedance output statesSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jul 11, 2000·7 cites·20 claims
- 3241US6140704AIntegrated circuit memory devices with improved twisted bit-line structuresSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Oct 31, 2000·9 cites·18 claims
- 3340US6028797AMulti-bank integrated circuit memory devices having cross-coupled isolation and precharge circuits thereinSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Feb 22, 2000·8 cites·19 claims
- 3440US2014241076A1Semiconductor memory device, method of testing the same and method of operating the sameKWON HYUNG-SHIN·Filed 2014·Application pending·0 cites
- 3538US7940589B2Bit line sense amplifier of semiconductor memory device and control method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 10, 2011·0 cites·15 claims
- 3635US2006103451A1Tunable reference voltage generatorLIM JONG-HYOUNG·Filed 2005·Application pending·0 cites
- 3734US2009044063A1Semiconductor memory device and test system of a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3834US2007058316A1Semiconductor device having fuse circuitsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3928US6084808ACircuits and methods for burn-in of integrated circuits using potential differences between adjacent main word linesSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jul 4, 2000·2 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →