Inventor · disambiguated record
Hiroyuki Masato
Also filed as: MASATO HIROYUKI
19 granted patents·1 pending application·540 citations·filing 1994–2007
95Inventor score
Top patents by PatentIndex Score
20 records- 0195US6639255B2GaN-based HFET having a surface-leakage reducing cap layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Oct 28, 2003·98 cites·8 claims
- 0295US6110813AMethod for forming an ohmic electrodeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Aug 29, 2000·170 cites·1 claims
- 0392US6274889B1Method for forming ohmic electrode, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Aug 14, 2001·109 cites·3 claims
- 0488US6787820B2Hetero-junction field effect transistor having an InGaAIN cap filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Sep 7, 2004·39 cites·4 claims
- 0575US6531718B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Mar 11, 2003·21 cites·8 claims
- 0672US6774449B1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Aug 10, 2004·13 cites·6 claims
- 0768US6924516B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Aug 2, 2005·10 cites·8 claims
- 0868US6593193B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jul 15, 2003·12 cites·18 claims
- 0963US7285806B2Semiconductor device having an active region formed from group III nitrideMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Oct 23, 2007·10 cites·6 claims
- 1059US7585706B2Method of fabricating a semiconductor devicePANASONIC CORP·Filed 2007·Granted Sep 8, 2009·1 cites·16 claims
- 1154US6809352B2Palladium silicide (PdSi) schottky electrode for gallium nitride semiconductor devicesMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Oct 26, 2004·4 cites·3 claims
- 1254US5905277AField-effect transistor and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted May 18, 1999·15 cites·6 claims
- 1351US6852612B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Feb 8, 2005·3 cites·4 claims
- 1450US6812505B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Nov 2, 2004·3 cites·1 claims
- 1546US5925903AField-effect transistors and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Jul 20, 1999·10 cites·2 claims
- 1643US7307292B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Dec 11, 2007·1 cites·10 claims
- 1743US5824575ASemiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Oct 20, 1998·9 cites·11 claims
- 1842US5585655AField-effect transistor and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Dec 17, 1996·8 cites·5 claims
- 1939US2005006664A1Semisonductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Application pending·0 cites
- 2031US5486705AHeterojunction field effect transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted Jan 23, 1996·4 cites·26 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →