Inventor · disambiguated record
Satish D. Athavale
Also filed as: ATHAVALE SATISH · ATHAVALE SATISH D
14 granted patents·1 pending application·255 citations·filing 1998–2004
93Inventor score
Files withIBM5INFINEON TECHNOLOGIES AG4INFINEON TECHNOLOGIES CORP2TEGAL CORP2INFINEON TECHNOLOGOIES NORTH A1
Top patents by PatentIndex Score
15 records- 0191US6348374B1Process for 4F2 STC cell having vertical MOSFET and buried-bitline conductor structureIBM·Filed 2000·Granted Feb 19, 2002·45 cites·11 claims
- 0291US6261967B1Easy to remove hard mask layer for semiconductor device fabricationINFINEON TECHNOLOGIES CORP·Filed 2000·Granted Jul 17, 2001·61 cites·46 claims
- 0380US6207584B1High dielectric constant material deposition to achieve high capacitanceIBM·Filed 2000·Granted Mar 27, 2001·24 cites·31 claims
- 0472US6821900B2Method for dry etching deep trenches in a substrateINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 23, 2004·15 cites·30 claims
- 0566US6406925B1Method and apparatus for minimizing semiconductor wafer arcing during semiconductor wafer processingTEGAL CORP·Filed 2000·Granted Jun 18, 2002·9 cites·10 claims
- 0665US6559001B2Methods of patterning a multi-layer film stack and forming a lower electrode of a capacitorIBM·Filed 2001·Granted May 6, 2003·9 cites·23 claims
- 0763US6420272B1Method for removal of hard mask used to define noble metal electrodeINFINEON TECHNOLOGIES AG·Filed 1999·Granted Jul 16, 2002·29 cites·8 claims
- 0860US6670233B2Methods of patterning a multi-layer film stack and forming a lower electrode of a capacitorIBM·Filed 2003·Granted Dec 30, 2003·6 cites·11 claims
- 0956US6214661B1Method to prevent oxygen out-diffusion from BSTO containing micro-electronic deviceINFINEON TECHNOLOGOIES NORTH A·Filed 2000·Granted Apr 10, 2001·10 cites·6 claims
- 1055US6346428B1Method and apparatus for minimizing semiconductor wafer arcing during semiconductor wafer processingTEGAL CORP·Filed 1998·Granted Feb 12, 2002·17 cites·26 claims
- 1151US6420099B1Tungsten hard mask for dry etching aluminum-containing layersINFINEON TECHNOLOGIES AG·Filed 1999·Granted Jul 16, 2002·16 cites·18 claims
- 1250US6518118B2Structure and process for buried bitline and single sided buried conductor formationIBM·Filed 2001·Granted Feb 11, 2003·4 cites·8 claims
- 1348US6365328B1Semiconductor structure and manufacturing methodINFINEON TECHNOLOGIES CORP·Filed 2000·Granted Apr 2, 2002·3 cites·7 claims
- 1439US6548414B2Method of plasma etching thin films of difficult to dry etch materialsINFINEON TECHNOLOGIES AG·Filed 1999·Granted Apr 15, 2003·7 cites·24 claims
- 1535US2005196917A1Method for forming a (111) oriented BSTO thin film layer for high dielectric constant capacitorsFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →