Inventor · disambiguated record
Ming-Yi Lee
Also filed as: LEE MING-YI
22 granted patents·4 pending applications·311 citations·filing 1997–2015
96Inventor score
Files withLSI LOGIC CORP11TAIWAN SEMICONDUCTOR MFG6LEE MING-YI3TAIWAN SEMICONDUCTOR MFG CO LTD3CHENG HONG-CHEN1
Top patents by PatentIndex Score
26 records- 0190US7619294B1Shallow trench isolation structure with low trench parasitic capacitanceLSI CORP·Filed 2005·Granted Nov 17, 2009·16 cites·10 claims
- 0288US5851890AProcess for forming integrated circuit structure with metal silicide contacts using notched sidewall spacer on gate electrodeLSI LOGIC CORP·Filed 1997·Granted Dec 22, 1998·88 cites·16 claims
- 0386US6613637B1Composite spacer scheme with low overlapped parasitic capacitanceLSI LOGIC CORP·Filed 2002·Granted Sep 2, 2003·44 cites·14 claims
- 0485US9412742B2Layout design for manufacturing a memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 9, 2016·8 cites·20 claims
- 0584US9449656B2Memory with bit cell header transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 20, 2016·9 cites·20 claims
- 0683US8965102B2System and method for defect analysis of a substrateTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Feb 24, 2015·8 cites·10 claims
- 0780US8226128B2Releasable nut-free C-clip secured pipe fittingLEE MING-YI·Filed 2010·Granted Jul 24, 2012·8 cites·5 claims
- 0879US9734572B2System and method for defect analysis of a substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 15, 2017·4 cites·13 claims
- 0977US6391768B1Process for CMP removal of excess trench or via filler metal which inhibits formation of concave regions on oxide surface of integrated circuit structureLSI LOGIC CORP·Filed 2000·Granted May 21, 2002·28 cites·2 claims
- 1070US6737342B1Composite spacer scheme with low overlapped parasitic capacitanceLSI LOGIC CORP·Filed 2003·Granted May 18, 2004·15 cites·11 claims
- 1169US8021955B1Method characterizing materials for a trench isolation structure having low trench parasitic capacitanceLSI LOGIC CORP·Filed 2009·Granted Sep 20, 2011·3 cites·21 claims
- 1267US7001823B1Method of manufacturing a shallow trench isolation structure with low trench parasitic capacitanceLSI LOGIC CORP·Filed 2001·Granted Feb 21, 2006·11 cites·27 claims
- 1367US6586332B1Deep submicron silicide blockingLSI LOGIC CORP·Filed 2001·Granted Jul 1, 2003·14 cites·15 claims
- 1463US6319836B1Planarization systemLSI LOGIC CORP·Filed 2000·Granted Nov 20, 2001·9 cites·19 claims
- 1561US8482990B2Memory edge cellCHENG HONG-CHEN·Filed 2011·Granted Jul 9, 2013·2 cites·11 claims
- 1656US8665654B2Memory edge cellTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 4, 2014·1 cites·20 claims
- 1755US6727165B1Fabrication of metal contacts for deep-submicron technologiesLSI LOGIC CORP·Filed 2001·Granted Apr 27, 2004·6 cites·22 claims
- 1852US2008302992A1Stop valve with filterLEE MING-YI·Filed 2007·Application pending·0 cites
- 1950US6989331B2Hard mask removalLSI LOGIC CORP·Filed 2003·Granted Jan 24, 2006·4 cites·20 claims
- 2047US6315649B1Wafer mounting plate for a polishing apparatus and method of usingTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Nov 13, 2001·18 cites·26 claims
- 2147US2010041900A1Isolation of lactam compound from adlay bran and its use on anti-proliferative cancer cellsKUANG TA FOODS CO LTD·Filed 2008·Application pending·0 cites
- 2245US2008303278A1Device for pipe couplingLEE MING-YI·Filed 2007·Application pending·0 cites
- 2343US2015069585A1Semiconductor device with an angled passivation layerTAIWAN SEMICONDUCTOR MFG·Filed 2013·Application pending·0 cites
- 2438US6604257B1Apparatus and method for cleaning a conduitTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Aug 12, 2003·8 cites·17 claims
- 2534US6916700B1Mixed-mode processTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jul 12, 2005·0 cites·22 claims
- 2631US6127286AApparatus and process for deposition of thin film on semiconductor substrate while inhibiting particle formation and depositionLSI LOGIC CORP·Filed 1998·Granted Oct 3, 2000·7 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →