Inventor · disambiguated record
William J. Gallagher
Also filed as: GALLAGHER WILLIAM · GALLAGHER WILLIAM J · GALLAGHER WILLIAM JOSEPH
83 granted patents·12 pending applications·3,383 citations·filing 1988–2025
99Inventor score
Files withIBM63TAIWAN SEMICONDUCTOR MFG CO LTD24FONTANA JR ROBERT E3BULZACCHELLI JOHN F2DE BROSSE JOHN K1
Top patents by PatentIndex Score
95 records- 0199US5991193AVoltage biasing for magnetic ram with magnetic tunnel memory cellsIBM·Filed 1997·Granted Nov 23, 1999·305 cites·43 claims
- 0299US5650958AMagnetic tunnel junctions with controlled magnetic responseIBM·Filed 1996·Granted Jul 22, 1997·521 cites·9 claims
- 0399US5640343AMagnetic memory array using magnetic tunnel junction devices in the memory cellsIBM·Filed 1996·Granted Jun 17, 1997·1.2k cites·13 claims
- 0498US11723218B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·4 cites·20 claims
- 0598US11289143B2SOT-MRAM with shared selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·11 cites·20 claims
- 0698US9437668B1High resistivity soft magnetic material for miniaturized power converterIBM·Filed 2015·Granted Sep 6, 2016·24 cites·13 claims
- 0798US6072718AMagnetic memory devices having multiple magnetic tunnel junctions thereinIBM·Filed 1998·Granted Jun 6, 2000·268 cites·34 claims
- 0898US5841692AMagnetic tunnel junction device with antiferromagnetically coupled pinned layerIBM·Filed 1997·Granted Nov 24, 1998·261 cites·5 claims
- 0997US8102236B1Thin film inductor with integrated gapsFONTANA JR ROBERT E·Filed 2010·Granted Jan 24, 2012·29 cites·25 claims
- 1097US6104633AIntentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devicesIBM·Filed 1998·Granted Aug 15, 2000·157 cites·23 claims
- 1196US12022665B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·2 cites·20 claims
- 1296US9331076B2Group III nitride integration with CMOS technologyIBM·Filed 2015·Granted May 3, 2016·11 cites·12 claims
- 1396US8717136B2Inductor with laminated yokeFONTANA JR ROBERT E·Filed 2012·Granted May 6, 2014·20 cites·15 claims
- 1496US6452764B1Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devicesIBM·Filed 2000·Granted Sep 17, 2002·76 cites·33 claims
- 1594US6226160B1Small area magnetic tunnel junction devices with low resistance and high magnetoresistanceIBM·Filed 1999·Granted May 1, 2001·86 cites·6 claims
- 1693US9734883B1Reference circuit and MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 15, 2017·13 cites·20 claims
- 1793US9324495B2Planar inductors with closed magnetic loopsIBM·Filed 2013·Granted Apr 26, 2016·10 cites·9 claims
- 1893US8547732B2Hybrid superconducting-magnetic memory cell and arrayBULZACCHELLI JOHN F·Filed 2012·Granted Oct 1, 2013·14 cites·18 claims
- 1992US9590026B2High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductorsIBM·Filed 2015·Granted Mar 7, 2017·6 cites·6 claims
- 2090US12356868B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 8, 2025·0 cites·20 claims
- 2190US9793336B2High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductorsIBM·Filed 2017·Granted Oct 17, 2017·4 cites·20 claims
- 2290US8208288B2Hybrid superconducting-magnetic memory cell and arrayBULZACCHELLI JOHN F·Filed 2008·Granted Jun 26, 2012·17 cites·15 claims
- 2390US6368878B1Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devicesIBM·Filed 2000·Granted Apr 9, 2002·46 cites·12 claims
- 2489US10541361B2Magnetic random access memory and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 21, 2020·2 cites·20 claims
- 2589US2025318438A1Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2688US9767878B1Semiconductor memory device and method for controlling the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 19, 2017·6 cites·20 claims
- 2788US5055158APlanarization of Josephson integrated circuitIBM·Filed 1991·Granted Oct 8, 1991·78 cites·14 claims
- 2887US9660069B2Group III nitride integration with CMOS technologyIBM·Filed 2016·Granted May 23, 2017·3 cites·15 claims
- 2987US9564165B2Laminating magnetic cores for on-chip magnetic devicesIBM·Filed 2016·Granted Feb 7, 2017·1 cites·1 claims
- 3086US12317513B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
- 3186US9362281B2Group III nitride integration with CMOS technologyIBM·Filed 2015·Granted Jun 7, 2016·3 cites·7 claims
- 3286US6590750B2Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devicesIBM·Filed 1998·Granted Jul 8, 2003·55 cites·34 claims
- 3385US12322428B2SOT-MRAM with shared selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·19 claims
- 3485US11031544B2Memory device with superparamagnetic layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·2 cites·20 claims
- 3585US9321634B2Forming magnetic microelectromechanical inductive componentsIBM·Filed 2015·Granted Apr 26, 2016·3 cites·12 claims
- 3684US2025267877A1Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3783US11081153B2Magnetic memory device with balancing synthetic anti-ferromagnetic layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 3, 2021·2 cites·20 claims
- 3883US8846529B2Electroless plating of cobalt alloys for on chip inductorsIBM·Filed 2013·Granted Sep 30, 2014·5 cites·20 claims
- 3983US2025266070A1Sot-mram with shared selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4082US9685329B2Embedded gallium-nitride in siliconIBM·Filed 2016·Granted Jun 20, 2017·2 cites·13 claims
- 4182US7492631B1Methods involving resetting spin-torque magnetic random access memoryIBM·Filed 2008·Granted Feb 17, 2009·13 cites·1 claims
- 4281US12240753B2Micro-electromechanical device having a soft magnetic material electrolessly deposited on a palladium layer coated metal beamIBM·Filed 2021·Granted Mar 4, 2025·0 cites·11 claims
- 4380US11864466B2Magnetic random access memory and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·0 cites·20 claims
- 4480US9105841B2Forming magnetic microelectromechanical inductive componentsIBM·Filed 2013·Granted Aug 11, 2015·3 cites·10 claims
- 4580US2024090237A1Mram device having self-aligned shunting layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4679US12041855B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·0 cites·20 claims
- 4779US11502241B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 15, 2022·2 cites·20 claims
- 4879US7505308B1Systems involving spin-transfer magnetic random access memoryIBM·Filed 2008·Granted Mar 17, 2009·11 cites·2 claims
- 4977US10217641B2Control of current collapse in thin patterned GaNIBM·Filed 2016·Granted Feb 26, 2019·2 cites·16 claims
- 5077US10002919B2High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductorsIBM·Filed 2017·Granted Jun 19, 2018·1 cites·20 claims
Showing the top 50 of 95 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →