Inventor · disambiguated record
Hidetsugu Ogishi
Also filed as: OGISHI HIDETSUGU
20 granted patents·2 pending applications·563 citations·filing 1984–2004
97Inventor score
Top patents by PatentIndex Score
22 records- 0197US6737318B2Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiringHITACHI LTD·Filed 2001·Granted May 18, 2004·105 cites·14 claims
- 0297US5504029AMethod of producing semiconductor integrated circuit device having memory cell and peripheral circuit MISFETsHITACHI LTD·Filed 1994·Granted Apr 2, 1996·99 cites·23 claims
- 0395US5153685ASemiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiringHITACHI LTD·Filed 1988·Granted Oct 6, 1992·72 cites·22 claims
- 0491US4606802APlanar magnetron sputtering with modified field configurationHITACHI LTD·Filed 1984·Granted Aug 19, 1986·36 cites·33 claims
- 0588US4610774ATarget for sputteringHITACHI LTD·Filed 1985·Granted Sep 9, 1986·40 cites·7 claims
- 0683US5202275ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1990·Granted Apr 13, 1993·43 cites·23 claims
- 0779US5780882ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1995·Granted Jul 14, 1998·33 cites·8 claims
- 0877US5930624AMethod of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiringHITACHI LTD·Filed 1998·Granted Jul 27, 1999·22 cites·5 claims
- 0976US6548847B2Semiconductor integrated circuit device having a first wiring strip exposed through a connecting hole, a transition-metal film in the connecting hole and an aluminum wiring strip thereover, and a transition-metal nitride film between the aluminum wiring strip and the transition-metal filmHITACHI LTD·Filed 2001·Granted Apr 15, 2003·12 cites·33 claims
- 1073US5331191ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1992·Granted Jul 19, 1994·24 cites·11 claims
- 1162US6894334B2Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI VLSI ENG·Filed 2003·Granted May 17, 2005·5 cites·33 claims
- 1261US6169324B1Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1999·Granted Jan 2, 2001·13 cites·19 claims
- 1361US5739589ASemiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the sameHITACHI LTD·Filed 1996·Granted Apr 14, 1998·13 cites·21 claims
- 1453US5753550ASemiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiringHITACHI LTD·Filed 1996·Granted May 19, 1998·7 cites·20 claims
- 1551US6342412B1Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1999·Granted Jan 29, 2002·8 cites·19 claims
- 1650US6127255ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1997·Granted Oct 3, 2000·8 cites·12 claims
- 1750US5811316AMethod of forming teos oxide and silicon nitride passivation layer on aluminum wiringHITACHI LTD·Filed 1995·Granted Sep 22, 1998·8 cites·13 claims
- 1848US7189636B2Fabrication method of semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2003·Granted Mar 13, 2007·4 cites·31 claims
- 1947US5557147ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1994·Granted Sep 17, 1996·7 cites·18 claims
- 2045US6281071B1Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring therefor and method of producing such wiringHIATCHI LTD·Filed 1999·Granted Aug 28, 2001·4 cites·22 claims
- 2139US2004155289A1Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiringFiled 2004·Application pending·0 cites
- 2237US2002028574A1Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiringFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →