Inventor · disambiguated record
Hidetaka Oshio
Also filed as: OSHIO HIDETAKA
8 granted patents·3 pending applications·15 citations·filing 2002–2022
81Inventor score
Files withAPPLIED MATERIALS INC11
Top patents by PatentIndex Score
11 records- 0194US11527408B2Multiple spacer patterning schemesAPPLIED MATERIALS INC·Filed 2020·Granted Dec 13, 2022·4 cites·8 claims
- 0294US11469107B2Highly etch selective amorphous carbon filmAPPLIED MATERIALS INC·Filed 2020·Granted Oct 11, 2022·4 cites·20 claims
- 0390US10727059B2Highly etch selective amorphous carbon filmAPPLIED MATERIALS INC·Filed 2018·Granted Jul 28, 2020·6 cites·20 claims
- 0481US11145509B2Method for forming and patterning a layer and/or substrateAPPLIED MATERIALS INC·Filed 2020·Granted Oct 12, 2021·1 cites·17 claims
- 0579US12112949B2Highly etch selective amorphous carbon filmAPPLIED MATERIALS INC·Filed 2022·Granted Oct 8, 2024·0 cites·29 claims
- 0678US12014927B2Highly etch selective amorphous carbon filmAPPLIED MATERIALS INC·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
- 0770US2023093450A1Multiple spacer patterning schemesAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 0868US12183578B2Method for forming and patterning a layer and/or substrateAPPLIED MATERIALS INC·Filed 2021·Granted Dec 31, 2024·0 cites·19 claims
- 0965US11315787B2Multiple spacer patterning schemesAPPLIED MATERIALS INC·Filed 2020·Granted Apr 26, 2022·0 cites·14 claims
- 1040US2004082251A1Apparatus for adjustable gas distribution for semiconductor substrate processingAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 1137US2004192051A1Method of forming a damascene structureAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →