Inventor · disambiguated record
Günther Ruhl
Also filed as: RUHL GUENTHER · RUHL GUNTHER · RUHL GÜNTHER
7 granted patents·4 pending applications·7 citations·filing 2002–2016
75Inventor score
Top patents by PatentIndex Score
11 records- 0165US9349804B2Composite wafer for bonding and encapsulating an SiC-based functional layerINFINEON TECHNOLOGIES AG·Filed 2013·Granted May 24, 2016·1 cites·10 claims
- 0260US7799583B2System for separation of an electrically conductive connectionINFINEON TECHNOLOGIES AG·Filed 2006·Granted Sep 21, 2010·2 cites·20 claims
- 0351US2015132614A1Sensor arrangement, energy system and methodINFINEON TECHNOLOGIES AG·Filed 2013·Application pending·0 cites
- 0450US6919147B2Production method for a halftone phase maskINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jul 19, 2005·1 cites·15 claims
- 0547US2016225856A1Composite Wafer Having a SiC-Based Functional LayerINFINEON TECHNOLOGIES AG·Filed 2016·Application pending·0 cites
- 0645US6953644B2Method for compensating for scatter/reflection effects in particle beam lithographyINFINEON TECHNOLOGIES AG·Filed 2003·Granted Oct 11, 2005·2 cites·11 claims
- 0743US9147639B2Semiconductor dies having opposing sides with different reflectivityINFINEON TECHNOLOGIES AG·Filed 2013·Granted Sep 29, 2015·0 cites·9 claims
- 0840US2009097004A1Lithography Apparatus, Masks for Non-Telecentric Exposure and Methods of Manufacturing Integrated CircuitsQIMONDA AG·Filed 2007·Application pending·0 cites
- 0938US7071110B2Process for the plasma etching of materials not containing siliconINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jul 4, 2006·0 cites·7 claims
- 1038US6797638B2Plasma-etching process for molybdenum silicon nitride layers on half-tone phase masks based on gas mixtures containing monofluoromethane and oxygenINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 28, 2004·1 cites·7 claims
- 1133US2002137353A1Method and device for delacquering an area on a mask substrateFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →