Inventor · disambiguated record
Louis N. Hutter
Also filed as: HUTTER III LOUIS NICHOLAS · HUTTER LOUIS · HUTTER LOUIS N · HUTTER LOUIS NICHOLAS
46 granted patents·2 pending applications·2,468 citations·filing 1986–2018
99Inventor score
Top patents by PatentIndex Score
48 records- 0198US6683380B2Integrated circuit with bonding layer over active circuitryTEXAS INSTRUMENTS INC·Filed 2002·Granted Jan 27, 2004·274 cites·11 claims
- 0297US4819052AMerged bipolar/CMOS technology using electrically active trenchTEXAS INSTRUMENTS INC·Filed 1986·Granted Apr 4, 1989·176 cites·22 claims
- 0396US6144100AIntegrated circuit with bonding layer over active circuitryTEXAS INSTRUMENTS INC·Filed 1997·Granted Nov 7, 2000·256 cites·17 claims
- 0494US6424005B1LDMOS power device with oversized dwellTEXAS INSTRUMENTS INC·Filed 1998·Granted Jul 23, 2002·140 cites·11 claims
- 0594US6236101B1Metallization outside protective overcoat for improved capacitors and inductorsTEXAS INSTRUMENTS INC·Filed 1998·Granted May 22, 2001·180 cites·10 claims
- 0691US5296393AProcess for the simultaneous fabrication of high-and-low-voltage semiconductor devices, integrated circuit containing the same, systems and methodsTEXAS INSTRUMENTS INC·Filed 1992·Granted Mar 22, 1994·110 cites·3 claims
- 0790US5489547AMethod of fabricating semiconductor device having polysilicon resistor with low temperature coefficientTEXAS INSTRUMENTS INC·Filed 1994·Granted Feb 6, 1996·115 cites·12 claims
- 0889US5472887AMethod of fabricating semiconductor device having high-and low-voltage MOS transistorsTEXAS INSTRUMENTS INC·Filed 1993·Granted Dec 5, 1995·70 cites·8 claims
- 0989US5171699AVertical DMOS transistor structure built in an N-well CMOS-based BiCMOS process and method of fabricationTEXAS INSTRUMENTS INC·Filed 1990·Granted Dec 15, 1992·71 cites·34 claims
- 1089US4980747ADeep trench isolation with surface contact to substrateTEXAS INSTRUMENTS INC·Filed 1988·Granted Dec 25, 1990·133 cites·5 claims
- 1187US4805071AHigh voltage capacitor for integrated circuitsTEXAS INSTRUMENTS INC·Filed 1987·Granted Feb 14, 1989·49 cites·19 claims
- 1285US6432791B1Integrated circuit capacitor and methodTEXAS INSTRUMENTS INC·Filed 2000·Granted Aug 13, 2002·39 cites·2 claims
- 1385US5330922ASemiconductor process for manufacturing semiconductor devices with increased operating voltagesTEXAS INSTRUMENTS INC·Filed 1989·Granted Jul 19, 1994·41 cites·24 claims
- 1485US5317180AVertical DMOS transistor built in an n-well MOS-based BiCMOS processTEXAS INSTRUMENTS INC·Filed 1992·Granted May 31, 1994·54 cites·17 claims
- 1583US5272098AVertical and lateral insulated-gate, field-effect transistors, systems and methodsTEXAS INSTRUMENTS INC·Filed 1992·Granted Dec 21, 1993·55 cites·1 claims
- 1683US4926233AMerged trench bipolar-CMOS transistor fabrication processTEXAS INSTRUMENTS INC·Filed 1988·Granted May 15, 1990·41 cites·24 claims
- 1783US4855244AMethod of making vertical PNP transistor in merged bipolar/CMOS technologyTEXAS INSTRUMENTS INC·Filed 1987·Granted Aug 8, 1989·63 cites·9 claims
- 1882US5614755AHigh voltage Shottky diodeTEXAS INSTRUMENTS INC·Filed 1993·Granted Mar 25, 1997·51 cites·5 claims
- 1982US5554873ASemiconductor device having polysilicon resistor with low temperature coefficientTEXAS INSTRUMENTS INC·Filed 1995·Granted Sep 10, 1996·58 cites·4 claims
- 2078US6284617B1Metalization outside protective overcoat for improved capacitors and inductorsTEXAS INSTRUMENTS INC·Filed 2001·Granted Sep 4, 2001·23 cites·1 claims
- 2178US5719421ADMOS transistor with low on-resistance and method of fabricationTEXAS INSTRUMENTS INC·Filed 1996·Granted Feb 17, 1998·43 cites·10 claims
- 2278US5528064AStructure for protecting integrated circuits from electro-static dischargeTEXAS INSTRUMENTS INC·Filed 1995·Granted Jun 18, 1996·43 cites·11 claims
- 2377US6352887B1Merged bipolar and CMOS circuit and methodTEXAS INSTRUMENTS INC·Filed 1999·Granted Mar 5, 2002·41 cites·5 claims
- 2472US7279738B2Semiconductor device with an analog capacitorTEXAS INSTRUMENTS INC·Filed 2005·Granted Oct 9, 2007·5 cites·9 claims
- 2572US5527722AMethod of fabrication of a semiconductor device having high-and low-voltage MOS transistorsTEXAS INSTR INCOPORATED·Filed 1995·Granted Jun 18, 1996·29 cites·15 claims
- 2670US5825065ALow voltage DMOS transistorTEXAS INSTRUMENTS INC·Filed 1997·Granted Oct 20, 1998·30 cites·10 claims
- 2768US5455447AVertical PNP transistor in merged bipolar/CMOS technologyTEXAS INSTRUMENTS INC·Filed 1992·Granted Oct 3, 1995·28 cites·3 claims
- 2867US6737326B2Method of integrating a thin film resistor in a multi-level metal tungsten-plug interconnectTEXAS INSTRUMENTS INC·Filed 2001·Granted May 18, 2004·11 cites·13 claims
- 2964US4994887AHigh voltage merged bipolar/CMOS technologyTEXAS INSTRUMENTS INC·Filed 1987·Granted Feb 19, 1991·26 cites·3 claims
- 3061US6033946AMethod for fabricating an isolated NMOS transistor on a digital BiCMOS processTEXAS INSTRUMENTS INC·Filed 1996·Granted Mar 7, 2000·20 cites·18 claims
- 3159US5408125ASemiconductor process for manufacturing semiconductor device with increased operating voltagesTEXAS INSTRUMENTS INC·Filed 1994·Granted Apr 18, 1995·16 cites·6 claims
- 3258US5057443AMethod for fabricating a trench bipolar transistorTEXAS INSTRUMENTS INC·Filed 1990·Granted Oct 15, 1991·25 cites·25 claims
- 3357US6153451ATransistor with increased operating voltage and method of fabricationTEXAS INSTRUMENTS INC·Filed 1998·Granted Nov 28, 2000·17 cites·9 claims
- 3456US6706635B2Innovative method to build a high precision analog capacitor with low voltage coefficient and hysteresisTEXAS INSTRUMENTS INC·Filed 2002·Granted Mar 16, 2004·6 cites·33 claims
- 3556US4929996ATrench bipolar transistorTEXAS INSTRUMENTS INC·Filed 1988·Granted May 29, 1990·20 cites·25 claims
- 3654US6284669B1Power transistor with silicided gate and contactsTEXAS INSTRUMENTS INC·Filed 1998·Granted Sep 4, 2001·16 cites·4 claims
- 3754US5436179ASemiconductor process for manufacturing semiconductor devices with increased operating voltagesTEXAS INSTRUMENTS INC·Filed 1994·Granted Jul 25, 1995·15 cites·7 claims
- 3853US6534364B1Tunnel diode layout for an EEPROM cell for protecting the tunnel diode regionTEXAS INSTRUMENTS INC·Filed 1997·Granted Mar 18, 2003·14 cites·12 claims
- 3952US5702959AMethod for making an isolated vertical transistorTEXAS INSTRUMENTS INC·Filed 1995·Granted Dec 30, 1997·18 cites·16 claims
- 4048US6025231ASelf aligned DMOS transistor and method of fabricationTEXAS INSTRUMENTS INC·Filed 1998·Granted Feb 15, 2000·10 cites·13 claims
- 4148US5576233AMethod for making an EEPROM with thermal oxide isolated floating gateTEXAS INSTRUMENTS INC·Filed 1995·Granted Nov 19, 1996·9 cites·18 claims
- 4245US5929506AIsolated vertical PNP transistor and methods for making same in a digital BiCMOS processTEXAS INSTRUMENTS INC·Filed 1997·Granted Jul 27, 1999·9 cites·4 claims
- 4344US6979615B2System and method for forming a semiconductor with an analog capacitor using fewer structure stepsTEXAS INSTRUMENTS INC·Filed 2002·Granted Dec 27, 2005·2 cites·10 claims
- 4443US2009020313A1Circuit logic embedded within ic protective layerTEXAS INSTRUMENTS INC·Filed 2007·Application pending·0 cites
- 4543US2020135489A1Method for making a semiconductor device including a superlattice having nitrogen diffused thereinATOMERA INC·Filed 2018·Application pending·0 cites
- 4642US6396109B1Isolated NMOS transistor fabricated in a digital BiCMOS processTEXAS INSTRUMENTS INC·Filed 1999·Granted May 28, 2002·7 cites·8 claims
- 4739US5880002AMethod for making isolated vertical PNP transistor in a digital BiCMOS processTEXAS INSTRUMENTS INC·Filed 1996·Granted Mar 9, 1999·6 cites·17 claims
- 4827US5574298ASubstrate contact for gate array base cell and method of forming sameTEXAS INSTRUMENTS INC·Filed 1995·Granted Nov 12, 1996·3 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →