Inventor · disambiguated record
Devendra K. Sadana
Also filed as: SADANA DEVENDRA · SADANA DEVENDRA K · SADANA DEVENDRA KUMAR · SADANA DEVENDRÁ K
826 granted patents·151 pending applications·6,728 citations·filing 1980–2023
99Inventor score
Top patents by PatentIndex Score
977 records- 0199US9472588B1Monolithic visible-infrared focal plane array on siliconIBM·Filed 2015·Granted Oct 18, 2016·59 cites·6 claims
- 0298US9654004B13D integrated DC-DC power convertersIBM·Filed 2016·Granted May 16, 2017·22 cites·10 claims
- 0398US9553056B1Semiconductor chip having tampering featureIBM·Filed 2015·Granted Jan 24, 2017·31 cites·7 claims
- 0498US9514995B1Implant-free punch through doping layer formation for bulk FinFET structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Dec 6, 2016·22 cites·7 claims
- 0598US9450381B1Monolithic integrated photonics with lateral bipolar and BiCMOSIBM·Filed 2015·Granted Sep 20, 2016·29 cites·9 claims
- 0698US9372307B1Monolithically integrated III-V optoelectronics with SI CMOSIBM·Filed 2015·Granted Jun 21, 2016·15 cites·20 claims
- 0798US8912020B2Integrating active matrix inorganic light emitting diodes for display devicesBEDELL STEPHEN W·Filed 2011·Granted Dec 16, 2014·47 cites·20 claims
- 0898US8860005B1Thin light emitting diode and fabrication methodIBM·Filed 2013·Granted Oct 14, 2014·18 cites·16 claims
- 0998US8247261B2Thin substrate fabrication using stress-induced substrate spallingBEDELL STEPHEN W·Filed 2010·Granted Aug 21, 2012·55 cites·8 claims
- 1098US8169025B2Strained CMOS device, circuit and method of fabricationBEDELL STEPHEN W·Filed 2010·Granted May 1, 2012·69 cites·24 claims
- 1198US7772096B2Formation of SOI by oxidation of silicon with engineered porosity gradientINTERNAT MACHINES CORP·Filed 2008·Granted Aug 10, 2010·201 cites·9 claims
- 1298US7524740B1Localized strain relaxation for strained Si directly on insulatorIBM·Filed 2008·Granted Apr 28, 2009·70 cites·2 claims
- 1398US7358166B2Relaxed, low-defect SGOI for strained Si CMOS applicationsIBM·Filed 2005·Granted Apr 15, 2008·62 cites·23 claims
- 1498US6717216B1SOI based field effect transistor having a compressive film in undercut area under the channel and a method of making the deviceIBM·Filed 2002·Granted Apr 6, 2004·282 cites·15 claims
- 1598US6642090B1Fin FET devices from bulk semiconductor and method for formingIBM·Filed 2002·Granted Nov 4, 2003·540 cites·18 claims
- 1698US6566177B1Silicon-on-insulator vertical array device trench capacitor DRAMIBM·Filed 1999·Granted May 20, 2003·279 cites·9 claims
- 1798US5767549ASOI CMOS structureIBM·Filed 1996·Granted Jun 16, 1998·417 cites·5 claims
- 1897US11585871B1Rapid carrier-resolved photo-hall analysisIBM·Filed 2021·Granted Feb 21, 2023·6 cites·20 claims
- 1997US11107968B1All-semiconductor Josephson junction device for qubit applicationsIBM·Filed 2020·Granted Aug 31, 2021·5 cites·20 claims
- 2097US10644356B2High charge rate, large capacity, solid-state batteryIBM·Filed 2017·Granted May 5, 2020·8 cites·13 claims
- 2197US9739728B1Automatic defect detection and classification for high throughput electron channeling contrast imagingIBM·Filed 2016·Granted Aug 22, 2017·16 cites·19 claims
- 2297US9362444B1Optoelectronics and CMOS integration on GOI substrateIBM·Filed 2015·Granted Jun 7, 2016·18 cites·7 claims
- 2397US9096050B2Wafer scale epitaxial graphene transferIBM·Filed 2013·Granted Aug 4, 2015·34 cites·18 claims
- 2497US9064722B2Breakdown voltage multiplying integration schemeBEDELL STEPHEN W·Filed 2012·Granted Jun 23, 2015·27 cites·5 claims
- 2597US9059339B1Light emitting diodes with via contact schemeIBM·Filed 2014·Granted Jun 16, 2015·21 cites·20 claims
- 2697US8937299B2III-V finFETs on silicon substrateIBM·Filed 2013·Granted Jan 20, 2015·40 cites·10 claims
- 2797US6541356B2Ultimate SIMOXIBM·Filed 2001·Granted Apr 1, 2003·124 cites·38 claims
- 2897US6333532B1Patterned SOI regions in semiconductor chipsIBM·Filed 1999·Granted Dec 25, 2001·232 cites·27 claims
- 2997US6214694B1Process of making densely patterned silicon-on-insulator (SOI) region on a waferIBM·Filed 1998·Granted Apr 10, 2001·244 cites·17 claims
- 3096US12185646B2Phase change memory having gradual resetIBM·Filed 2022·Granted Dec 31, 2024·2 cites·16 claims
- 3196US11380836B2Topological qubit deviceIBM·Filed 2020·Granted Jul 5, 2022·5 cites·20 claims
- 3296US10777842B2Rechargeable lithium-ion battery with an anode structure containing a porous regionIBM·Filed 2018·Granted Sep 15, 2020·8 cites·21 claims
- 3396US10581109B2Fabrication method of all solid-state thin-film batteryIBM·Filed 2017·Granted Mar 3, 2020·8 cites·11 claims
- 3496US10076475B2Shell-structured particles for sunscreen applicationsIBM·Filed 2016·Granted Sep 18, 2018·8 cites·9 claims
- 3596US10045918B2Embedding oxide particles within separate particles for sunscreen applicationsIBM·Filed 2016·Granted Aug 14, 2018·5 cites·10 claims
- 3696US10002856B1Micro-LED array transferIBM·Filed 2017·Granted Jun 19, 2018·13 cites·16 claims
- 3796US9991408B1Monolithically integrated high voltage photovoltaics and light emitting diode with textured surfaceIBM·Filed 2017·Granted Jun 5, 2018·9 cites·5 claims
- 3896US9985164B1Monolithically integrated high voltage photovoltaics and light emitting diode with textured surfaceIBM·Filed 2017·Granted May 29, 2018·9 cites·15 claims
- 3996US9608160B1Polarization free gallium nitride-based photonic devices on nanopatterned siliconIBM·Filed 2016·Granted Mar 28, 2017·19 cites·17 claims
- 4096US9570295B1Protective capping layer for spalled gallium nitrideIBM·Filed 2016·Granted Feb 14, 2017·10 cites·20 claims
- 4196US9559240B1Nano-pillar-based biosensing deviceIBM·Filed 2015·Granted Jan 31, 2017·13 cites·20 claims
- 4296US9515073B1III-V semiconductor CMOS FinFET deviceIBM·Filed 2016·Granted Dec 6, 2016·12 cites·17 claims
- 4396US9401397B1Reduction of defect induced leakage in III-V semiconductor devicesIBM·Filed 2015·Granted Jul 26, 2016·11 cites·20 claims
- 4496US9331076B2Group III nitride integration with CMOS technologyIBM·Filed 2015·Granted May 3, 2016·11 cites·12 claims
- 4596US9293476B2Integrating active matrix inorganic light emitting diodes for display devicesIBM·Filed 2014·Granted Mar 22, 2016·19 cites·13 claims
- 4696US8916451B2Thin film wafer transfer and structure for electronic devicesIBM·Filed 2013·Granted Dec 23, 2014·29 cites·20 claims
- 4796US8450184B2Thin substrate fabrication using stress-induced spallingBEDELL STEPHEN W·Filed 2012·Granted May 28, 2013·17 cites·9 claims
- 4896US8178430B2N-type carrier enhancement in semiconductorsKIM JEE HWAN·Filed 2009·Granted May 15, 2012·115 cites·9 claims
- 4996US7087965B2Strained silicon CMOS on hybrid crystal orientationsIBM·Filed 2004·Granted Aug 8, 2006·97 cites·13 claims
- 5096US6991998B2Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transferIBM·Filed 2004·Granted Jan 31, 2006·101 cites·18 claims
Showing the top 50 of 977 patent records by PatentIndex Score.
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