Inventor · disambiguated record
Tien Ying Luo
Also filed as: LUO TIEN Y · LUO TIEN YING
22 granted patents·6 pending applications·172 citations·filing 2003–2016
95Inventor score
Files withFREESCALE SEMICONDUCTOR INC18GLOBALFOUNDRIES INC6LUO TIEN YING2ADETUTU OLUBUNMI O1LUO TIEN Y1
Top patents by PatentIndex Score
28 records- 0190US7144825B2Multi-layer dielectric containing diffusion barrier materialFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Dec 5, 2006·55 cites·18 claims
- 0286US8017469B2Dual high-k oxides with sige channelFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Sep 13, 2011·14 cites·25 claims
- 0384US7445984B2Method for removing nanoclusters from selected regionsFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Nov 4, 2008·10 cites·13 claims
- 0483US7981808B2Method of forming a gate dielectric by in-situ plasmaFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Jul 19, 2011·8 cites·6 claims
- 0583US7651935B2Process of forming an electronic device including active regions and gate electrodes of different compositions overlying the active regionsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jan 26, 2010·10 cites·20 claims
- 0683US7432158B1Method for retaining nanocluster size and electrical characteristics during processingFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 7, 2008·11 cites·19 claims
- 0783US7402472B2Method of making a nitrided gate dielectricFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jul 22, 2008·9 cites·11 claims
- 0879US7767588B2Method for forming a deposited oxide layerFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Aug 3, 2010·6 cites·9 claims
- 0978US6884685B2Radical oxidation and/or nitridation during metal oxide layer deposition processFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Apr 26, 2005·22 cites·21 claims
- 1073US9312145B2Conformal nitridation of one or more fin-type transistor layersGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 12, 2016·2 cites·18 claims
- 1170US7741183B2Method of forming a gate dielectricFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Jun 22, 2010·3 cites·18 claims
- 1269USRE45955EDual high-K oxides with SiGe channelLUO TIEN YING·Filed 2014·Granted Mar 29, 2016·3 cites·25 claims
- 1369US7678698B2Method of forming a semiconductor device with multiple tensile stressor layersFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Mar 16, 2010·3 cites·18 claims
- 1468US9698269B2Conformal nitridation of one or more fin-type transistor layersGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 4, 2017·1 cites·13 claims
- 1568US9147696B2Devices and methods of forming finFETs with self aligned fin formationGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 29, 2015·2 cites·7 claims
- 1667US9202697B2Forming a gate by depositing a thin barrier layer on a titanium nitride capGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 1, 2015·2 cites·11 claims
- 1767US7776731B2Method of removing defects from a dielectric material in a semiconductorFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Aug 17, 2010·2 cites·20 claims
- 1863US7829447B2Semiconductor structure pattern formationFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Nov 9, 2010·7 cites·21 claims
- 1951US8659087B2Electronic device with a gate electrode having at least two portionsADETUTU OLUBUNMI O·Filed 2009·Granted Feb 25, 2014·0 cites·20 claims
- 2045US7001852B2Method of making a high quality thin dielectric layerFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Feb 21, 2006·2 cites·33 claims
- 2144US9209258B2Depositing an etch stop layer before a dummy cap layer to improve gate performanceGLOBALFOUNDRIES INC·Filed 2014·Granted Dec 8, 2015·0 cites·16 claims
- 2244US2015333067A1Devices and methods of forming finfets with self aligned fin formationGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
- 2343US7700499B2Multilayer silicon nitride deposition for a semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Apr 20, 2010·0 cites·22 claims
- 2443US2008173908A1Multilayer silicon nitride deposition for a semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 2537US2007202645A1Method for forming a deposited oxide layerLUO TIEN YING·Filed 2007·Application pending·0 cites
- 2637US2006084217A1Plasma impurification of a metal gate in a semiconductor fabrication processFREESCALE SEMICONDUCTOR INC·Filed 2004·Application pending·0 cites
- 2737US2007190711A1Semiconductor device and method for incorporating a halogen in a dielectricLUO TIEN Y·Filed 2006·Application pending·0 cites
- 2836US2011210401A1Multilayer silicon nitride deposition for a semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2010·Application pending·0 cites
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