Inventor · disambiguated record
Je Hoon Park
Also filed as: PARK JE HOON
21 granted patents·219 citations·filing 1999–2003
95Inventor score
Technology areasG11C
Top patents by PatentIndex Score
21 records- 0177US6751137B2Column repair circuit in ferroelectric memoryHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jun 15, 2004·24 cites·20 claims
- 0276US6845030B2Nonvolatile ferroelectric memory device and method of fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jan 18, 2005·23 cites·25 claims
- 0375US6654274B2Ferroelectric memory and method for driving the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Nov 25, 2003·22 cites·32 claims
- 0474US6639857B2Coding cell of nonvolatile ferroelectric memory device and operating method thereof, and column repair circuit of nonvolatile ferroelectric memory device having the coding cell and method for repairing columnHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Oct 28, 2003·18 cites·16 claims
- 0570US6775172B2Nonvolatile ferroelectric memory and method for driving the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Aug 10, 2004·18 cites·17 claims
- 0669US6906975B2Reference voltage generating circuit of nonvolatile ferroelectric memory deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jun 14, 2005·16 cites·12 claims
- 0766US6845031B2Nonvolatile ferroelectric memory device and method for driving the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jan 18, 2005·14 cites·14 claims
- 0864US6597608B2Coding cell of nonvolatile ferroelectric memory device and operating method thereof, and column repair circuit of nonvolatile ferroelectric memory device having the coding cell and method for repairing columnHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jul 22, 2003·14 cites·29 claims
- 0962US6490189B1Boost voltage generating circuit for nonvolatile ferroelectric memory device and method for generating boost voltageHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Dec 3, 2002·12 cites·26 claims
- 1056US6483738B2Method for driving nonvolatile ferroelectric memory deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Nov 19, 2002·9 cites·14 claims
- 1156US6480410B2Nonvolatile ferroelectric memory device and method for driving the sameHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Nov 12, 2002·9 cites·40 claims
- 1255US6868003B2Magnetic random access memoryHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Mar 15, 2005·8 cites·15 claims
- 1355US6836425B2Coding cell of nonvolatile ferroelectric memory device and operating method thereof, and column repair circuit of nonvolatile ferroelectric memory device having the coding cell and method for repairing columnHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Dec 28, 2004·7 cites·6 claims
- 1455US6700812B2Nonvolatile ferroelectric memory device and method for driving the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Mar 2, 2004·8 cites·13 claims
- 1542US6879510B2Nonvolatile ferroelectric memory device and method for operating the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Apr 12, 2005·3 cites·20 claims
- 1641US6600675B2Reference circuit in ferroelectric memory and method for driving the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jul 29, 2003·3 cites·16 claims
- 1739US6791861B2Ferroelectric memory device and a method for driving the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Sep 14, 2004·2 cites·12 claims
- 1839US6687173B2Circuit for testing ferroelectric capacitor in FRAMHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Feb 3, 2004·2 cites·32 claims
- 1939US6498745B2Circuit for generating timing of reference plate line in nonvolatile ferroelectric memory device and method for driving reference cellHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Dec 24, 2002·2 cites·9 claims
- 2037US6754096B2Apparatus and method for driving ferroelectric memoryHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jun 22, 2004·1 cites·19 claims
- 2135US6215691B1Cell structure of ferroelectric memory deviceHYUNDAI ELECTRONICS IND·Filed 1999·Granted Apr 10, 2001·4 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →