Inventor · disambiguated record
Thomas W. Mountsier
Also filed as: MOUNTSIER THOMAS · MOUNTSIER THOMAS W · MOUNTSIER THOMAS WELLER
29 granted patents·2,441 citations·filing 1996–2017
98Inventor score
Top patents by PatentIndex Score
29 records- 0198US9618846B2PECVD films for EUV lithographyLAM RES CORP·Filed 2016·Granted Apr 11, 2017·284 cites·11 claims
- 0298US5872058AHigh aspect ratio gapfill process by using HDPNOVELLUS SYSTEMS INC·Filed 1997·Granted Feb 16, 1999·426 cites·10 claims
- 0397US8728956B2Plasma activated conformal film depositionLAVOIE ADRIEN·Filed 2011·Granted May 20, 2014·541 cites·39 claims
- 0496US9230800B2Plasma activated conformal film depositionNOVELLUS SYSTEMS INC·Filed 2014·Granted Jan 5, 2016·41 cites·22 claims
- 0596US9190489B1Sacrificial pre-metal dielectric for self-aligned contact schemeLAM RES CORP·Filed 2014·Granted Nov 17, 2015·31 cites·24 claims
- 0695US7420275B1Boron-doped SIC copper diffusion barrier filmsNOVELLUS SYSTEMS INC·Filed 2006·Granted Sep 2, 2008·39 cites·20 claims
- 0795US7396759B1Protection of Cu damascene interconnects by formation of a self-aligned buffer layerNOVELLUS SYSTEMS INC·Filed 2004·Granted Jul 8, 2008·105 cites·15 claims
- 0895US6054206AChemical vapor deposition of low density silicon dioxide filmsNOVELLUS SYSTEMS INC·Filed 1998·Granted Apr 25, 2000·167 cites·9 claims
- 0994US7531463B2Fabrication of semiconductor interconnect structureNOVELLUS SYSTEMS INC·Filed 2006·Granted May 12, 2009·31 cites·30 claims
- 1094US6238751B1Chemical vapor deposition of low density silicon dioxide filmsNOVELLUS SYSTEMS INC·Filed 2000·Granted May 29, 2001·75 cites·8 claims
- 1192US9418889B2Selective formation of dielectric barriers for metal interconnects in semiconductor devicesLAM RES CORP·Filed 2015·Granted Aug 16, 2016·8 cites·20 claims
- 1292US8298936B1Multistep method of depositing metal seed layersROZBICKI ROBERT·Filed 2010·Granted Oct 30, 2012·24 cites·9 claims
- 1391US9379210B2Sacrificial pre-metal dielectric for self-aligned contact schemeLAM RES CORP·Filed 2015·Granted Jun 28, 2016·7 cites·7 claims
- 1491US8030777B1Protection of Cu damascene interconnects by formation of a self-aligned buffer layerNOVELLUS SYSTEMS INC·Filed 2007·Granted Oct 4, 2011·18 cites·20 claims
- 1591US7842604B1Low-k b-doped SiC copper diffusion barrier filmsNOVELLUS SYSTEMS INC·Filed 2007·Granted Nov 30, 2010·17 cites·21 claims
- 1691US7338908B1Method for fabrication of semiconductor interconnect structure with reduced capacitance, leakage current, and improved breakdown voltageNOVELLUS SYSTEMS INC·Filed 2003·Granted Mar 4, 2008·66 cites·54 claims
- 1791US6200412B1Chemical vapor deposition system including dedicated cleaning gas injectionNOVELLUS SYSTEMS INC·Filed 1996·Granted Mar 13, 2001·181 cites·16 claims
- 1891US5810933AWafer cooling deviceNOVELLUS SYSTEMS INC·Filed 1996·Granted Sep 22, 1998·131 cites·68 claims
- 1990US6613199B1Apparatus and method for physical vapor deposition using an open top hollow cathode magnetronNOVELLUS SYSTEMS INC·Filed 2001·Granted Sep 2, 2003·35 cites·16 claims
- 2089US7239017B1Low-k B-doped SiC copper diffusion barrier filmsNOVELLUS SYSTEMS INC·Filed 2004·Granted Jul 3, 2007·42 cites·7 claims
- 2188US8053861B2Diffusion barrier layersNOVELLUS SYSTEMS INC·Filed 2009·Granted Nov 8, 2011·12 cites·24 claims
- 2286US9304396B2PECVD films for EUV lithographyLAM RES CORP·Filed 2014·Granted Apr 5, 2016·9 cites·14 claims
- 2385US9018103B2High aspect ratio etch with combination maskLAM RES CORP·Filed 2013·Granted Apr 28, 2015·5 cites·16 claims
- 2484US6184572B1Interlevel dielectric stack containing plasma deposited fluorinated amorphous carbon films for semiconductor devicesNOVELLUS SYSTEMS INC·Filed 1998·Granted Feb 6, 2001·60 cites·4 claims
- 2577US6265320B1Method of minimizing reactive ion etch damage of organic insulating layers in semiconductor fabricationNOVELLUS SYSTEMS INC·Filed 1999·Granted Jul 24, 2001·54 cites·20 claims
- 2671US6875699B1Method for patterning multilevel interconnectsLAM RES CORP·Filed 2002·Granted Apr 5, 2005·15 cites·13 claims
- 2767US9659783B2High aspect ratio etch with combination maskLAM RES CORP·Filed 2015·Granted May 23, 2017·1 cites·16 claims
- 2856US6150258APlasma deposited fluorinated amorphous carbon filmsIBM·Filed 1999·Granted Nov 21, 2000·16 cites·7 claims
- 2946US10242883B2High aspect ratio etch of oxide metal oxide metal stackLAM RES CORP·Filed 2017·Granted Mar 26, 2019·0 cites·18 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →