Inventor · disambiguated record
Churn Weng Yim
Also filed as: YIM CHURN WENG
1 granted patent·2 pending applications·0 citations·filing 2022–2024
4Inventor score
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3 records- 0149US2024297240A1Split-gate trench power mosfet with thick poly-to-poly isolationST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 0244US12224342B2Gate contact structure for a trench power MOSFET with a split gate configurationST MICROELECTRONICS PTE LTD·Filed 2022·Granted Feb 11, 2025·0 cites·25 claims
- 0344US2023238341A1Thick bonding pad structure for wire bond stress reductionST MICROELECTRONICS PTE LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →