Inventor · disambiguated record
Hakeem Oluseyi
Also filed as: OLUSEYI HAKEEM · OLUSEYI HAKEEM M
7 granted patents·1 pending application·174 citations·filing 2000–2002
87Inventor score
Files withAPPLIED MATERIALS INC7
Top patents by PatentIndex Score
8 records- 0191US6633391B1Monitoring of film characteristics during plasma-based semi-conductor processing using optical emission spectroscopyAPPLIED MATERIALS INC·Filed 2000·Granted Oct 14, 2003·57 cites·5 claims
- 0287US6603538B1Method and apparatus employing optical emission spectroscopy to detect a fault in process conditions of a semiconductor processing systemAPPLIED MATERIALS INC·Filed 2000·Granted Aug 5, 2003·36 cites·21 claims
- 0382US6440870B1Method of etching tungsten or tungsten nitride electrode gates in semiconductor structuresAPPLIED MATERIALS INC·Filed 2001·Granted Aug 27, 2002·28 cites·61 claims
- 0478US6423644B1Method of etching tungsten or tungsten nitride electrode gates in semiconductor structuresAPPLIED MATERIALS INC·Filed 2000·Granted Jul 23, 2002·25 cites·44 claims
- 0574US6579806B2Method of etching tungsten or tungsten nitride in semiconductor structuresAPPLIED MATERIALS INC·Filed 2002·Granted Jun 17, 2003·16 cites·18 claims
- 0659US6933243B2High selectivity and residue free process for metal on thin dielectric gate etch applicationAPPLIED MATERIALS INC·Filed 2002·Granted Aug 23, 2005·8 cites·18 claims
- 0751US6943053B2System, method and medium for modeling, monitoring and/or controlling plasma based semiconductor manufacturing processesAPPLIED MATERIALS INC·Filed 2002·Granted Sep 13, 2005·4 cites·19 claims
- 0836US2003235995A1Method of increasing selectivity to mask when etching tungsten or tungsten nitrideFiled 2002·Application pending·0 cites
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