Inventor · disambiguated record
Naoharu Sugiyama
Also filed as: SUGIYAMA NAOHARU
69 granted patents·17 pending applications·2,690 citations·filing 1986–2018
99Inventor score
Top patents by PatentIndex Score
86 records- 0199US6607948B1Method of manufacturing a substrate using an SiGe layerTOSHIBA KK·Filed 2001·Granted Aug 19, 2003·663 cites·12 claims
- 0298US6191432B1Semiconductor device and memory deviceTOSHIBA KK·Filed 1997·Granted Feb 20, 2001·243 cites·12 claims
- 0398US6060743ASemiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the sameTOSHIBA KK·Filed 1998·Granted May 9, 2000·267 cites·13 claims
- 0497US6774390B2Semiconductor deviceTOSHIBA KK·Filed 2003·Granted Aug 10, 2004·137 cites·20 claims
- 0597US6583437B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2001·Granted Jun 24, 2003·131 cites·7 claims
- 0697US6326667B1Semiconductor devices and methods for producing semiconductor devicesTOSHIBA KK·Filed 2000·Granted Dec 4, 2001·143 cites·21 claims
- 0797US5847419ASi-SiGe semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 1997·Granted Dec 8, 1998·422 cites·4 claims
- 0896US7759228B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2006·Granted Jul 20, 2010·53 cites·11 claims
- 0996US7622773B2Semiconductor device including multi-gate metal-insulator-semiconductor (MIS) transistorTOSHIBA KK·Filed 2007·Granted Nov 24, 2009·40 cites·17 claims
- 1094US6369438B1Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 1999·Granted Apr 9, 2002·138 cites·12 claims
- 1193US6709909B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Mar 23, 2004·63 cites·9 claims
- 1293US6509587B2Semiconductor deviceTOSHIBA KK·Filed 2001·Granted Jan 21, 2003·76 cites·10 claims
- 1392US8008751B2Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2007·Granted Aug 30, 2011·22 cites·7 claims
- 1491US6727550B2Integrated circuit deviceTOSHIBA KK·Filed 2002·Granted Apr 27, 2004·58 cites·10 claims
- 1590US7629658B2Vertical spin transistor and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Dec 8, 2009·18 cites·22 claims
- 1690US7619239B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2006·Granted Nov 17, 2009·20 cites·4 claims
- 1789US8785943B2Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layerSHIODA TOMONARI·Filed 2012·Granted Jul 22, 2014·10 cites·33 claims
- 1887US8598605B2Semiconductor light-emitting deviceSUGIYAMA NAOHARU·Filed 2012·Granted Dec 3, 2013·5 cites·20 claims
- 1986US5985708AMethod of manufacturing vertical power deviceTOSHIBA KK·Filed 1997·Granted Nov 16, 1999·73 cites·6 claims
- 2084US8872158B2Semiconductor light emitting deviceTOSHIBA KK·Filed 2014·Granted Oct 28, 2014·3 cites·12 claims
- 2184US6917096B2Semiconductor device and method of manufacturing substrateTOSHIBA KK·Filed 2003·Granted Jul 12, 2005·26 cites·7 claims
- 2283US9136425B2Semiconductor light emitting element and light emitting deviceTOSHIBA KK·Filed 2014·Granted Sep 15, 2015·3 cites·8 claims
- 2383US8809085B2Method for manufacturing nitride semiconductor deviceSATO TAISUKE·Filed 2011·Granted Aug 19, 2014·4 cites·19 claims
- 2482US8680537B2Nitride semiconductor element and nitride semiconductor waferHIKOSAKA TOSHIKI·Filed 2012·Granted Mar 25, 2014·4 cites·20 claims
- 2579US9040322B2Method for manufacturing semiconductor light emitting elementSATO TAISUKE·Filed 2012·Granted May 26, 2015·3 cites·19 claims
- 2679US8610106B2Semiconductor light emitting deviceSHIODA TOMONARI·Filed 2011·Granted Dec 17, 2013·3 cites·19 claims
- 2778US9178111B2Semiconductor light emitting deviceTOSHIBA KK·Filed 2013·Granted Nov 3, 2015·3 cites·20 claims
- 2878US8525194B2Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layerSHIODA TOMONARI·Filed 2011·Granted Sep 3, 2013·3 cites·18 claims
- 2978US8093083B1Method for manufacturing a semiconductor light emitting deviceHIKOSAKA TOSHIKI·Filed 2011·Granted Jan 10, 2012·4 cites·20 claims
- 3077US9312436B2Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layerTOSHIBA KK·Filed 2013·Granted Apr 12, 2016·3 cites·15 claims
- 3177US8698123B2Semiconductor light emitting deviceSHIODA TOMONARI·Filed 2011·Granted Apr 15, 2014·2 cites·20 claims
- 3276US9287369B2Nitride semiconductor element and nitride semiconductor waferTOSHIBA KK·Filed 2014·Granted Mar 15, 2016·2 cites·19 claims
- 3375US8952401B2Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layerSUGIYAMA NAOHARU·Filed 2011·Granted Feb 10, 2015·3 cites·15 claims
- 3475US8928000B2Nitride semiconductor wafer including different lattice constantsHUNG HUNG·Filed 2012·Granted Jan 6, 2015·4 cites·17 claims
- 3575US8174095B2Semiconductor device and manufacturing method thereofIRISAWA TOSHIFUMI·Filed 2011·Granted May 8, 2012·5 cites·18 claims
- 3674US9053931B2Nitride semiconductor wafer, nitride semiconductor device, and method for manufacturing nitride semiconductor waferYOSHIDA HISASHI·Filed 2012·Granted Jun 9, 2015·3 cites·37 claims
- 3773US9054036B2Nitride semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layerTOSHIBA KK·Filed 2013·Granted Jun 9, 2015·2 cites·18 claims
- 3873US8790999B2Method for manufacturing nitride semiconductor crystal layerTOSHIBA KK·Filed 2013·Granted Jul 29, 2014·2 cites·18 claims
- 3970US8779437B2Wafer, crystal growth method, and semiconductor deviceSHIODA TOMONARI·Filed 2011·Granted Jul 15, 2014·2 cites·23 claims
- 4070US7842982B2Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2009·Granted Nov 30, 2010·4 cites·3 claims
- 4169US9349590B2Method for manufacturing nitride semiconductor layerHIKOSAKA TOSHIKI·Filed 2012·Granted May 24, 2016·2 cites·20 claims
- 4269US8604496B2Optical semiconductor deviceSHIODA TOMONARI·Filed 2011·Granted Dec 10, 2013·1 cites·20 claims
- 4367US9397167B2Nitride semiconductor wafer, nitride semiconductor device, and method for manufacturing nitride semiconductor waferYOSHIDA HISASHI·Filed 2012·Granted Jul 19, 2016·2 cites·20 claims
- 4467US9202873B2Semiconductor wafer for semiconductor device having a multilayerTOSHIBA KK·Filed 2013·Granted Dec 1, 2015·1 cites·23 claims
- 4566US9679974B2Nitride semiconductor element, nitride semiconductor wafer, and method for forming nitride semiconductor layerTOSHIBA KK·Filed 2014·Granted Jun 13, 2017·1 cites·29 claims
- 4664US8987026B2Semiconductor light emitting deviceTOSHIBA KK·Filed 2014·Granted Mar 24, 2015·0 cites·19 claims
- 4763US9478706B2Semiconductor light emitting device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layerTOSHIBA KK·Filed 2014·Granted Oct 25, 2016·0 cites·23 claims
- 4862US8772800B2Semiconductor light-emitting deviceTOSHIBA KK·Filed 2013·Granted Jul 8, 2014·0 cites·20 claims
- 4961US9006706B2Semiconductor light emitting deviceTOSHIBA KK·Filed 2013·Granted Apr 14, 2015·1 cites·17 claims
- 5060US2014264413A1Semiconductor light emitting element, light emitting device, and method for manufacturing semiconductor light emitting elementTOSHIBA KK·Filed 2014·Application pending·0 cites
Showing the top 50 of 86 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →