Inventor · disambiguated record
Chien-Wei Lee
Also filed as: LEE CHIEN-WEI
37 granted patents·34 pending applications·46 citations·filing 2005–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD54HON HAI PREC IND CO LTD3HUNG SHUI-HSU2LEE CHIEN-WEI2UNIV CHINA MEDICAL2
Top patents by PatentIndex Score
71 records- 0194US11677027B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·2 cites·20 claims
- 0294US10483396B1Interfacial layer between fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·10 cites·20 claims
- 0393US9620503B1Fin field effect transistor and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·9 cites·20 claims
- 0490US11063152B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·4 cites·20 claims
- 0588US11432372B2Warpage control in the packaging of integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 30, 2022·3 cites·20 claims
- 0688US9806154B2FinFET structure and method for manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 31, 2017·4 cites·20 claims
- 0786US12191393B2Low Ge isolated epitaxial layer growth over nano-sheet architecture design for RP reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 7, 2025·1 cites·20 claims
- 0885US11527442B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·1 cites·20 claims
- 0984US11075120B2FinFET device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·2 cites·20 claims
- 1082US11088028B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·2 cites·20 claims
- 1182US2025366109A1Epitaxial structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1282US2024387731A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1381US12336210B2Source/drain structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
- 1481US10512124B2Warpage control in the packaging of integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 17, 2019·2 cites·20 claims
- 1581US2025287630A1Source/drain structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1681US2025126821A1FINFET Device and Method of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1780US12419076B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 16, 2025·0 cites·20 claims
- 1880US2025365994A1Capacitor structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1980US2024395625A1FinFET Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2079US12144065B2Warpage control in the packaging of integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 2178US11119959B2Data communication and processing method of master device and slave deviceREALTEK SEMICONDUCTOR CORP·Filed 2020·Granted Sep 14, 2021·2 cites·17 claims
- 2277US11735668B2Interfacial layer between fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·0 cites·20 claims
- 2376US12266655B2Transistors with recessed silicon cap and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 2476US12218222B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 4, 2025·0 cites·20 claims
- 2576US11929401B2Method of forming a source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 12, 2024·0 cites·20 claims
- 2676US11296077B2Transistors with recessed silicon cap and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 5, 2022·1 cites·20 claims
- 2776US2025089295A1Low ge isolated epitaxial layer growth over nano-sheet architecture design for rp reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2876US2025351493A1Semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2976US2025287657A1Semiconductor device structure with gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3076US2024213330A1Method of Forming a Source/DrainTAIWAN SEMICONDUCTOR MANFACTURING CO LTD·Filed 2024·Application pending·0 cites
- 3175US11929398B2FinFET structure and method for manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 12, 2024·0 cites·20 claims
- 3275US2022367635A1Finfet structure and method for manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3374US12112986B2FinFET device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 8, 2024·0 cites·20 claims
- 3474US9538582B2Warpage control in the packaging of integrated circuitsCHENG MING-DA·Filed 2012·Granted Jan 3, 2017·2 cites·20 claims
- 3574US2025351571A1Semiconductor devices and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3673US2025169170A1Transistors with Recessed Silicon Cap and Method Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3772US12034061B2Method for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 9, 2024·0 cites·20 claims
- 3872US11575026B2Source/drain structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 7, 2023·0 cites·20 claims
- 3972US11482620B2Interfacial layer between Fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 25, 2022·0 cites·20 claims
- 4072US2025081557A1Epitaxial structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4170US2024194788A1Nanosheet semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4270US2025212493A1Semiconductor devices with a source/drain barrier layer and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4369US2025056819A1Capacitor structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4467US12317552B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 27, 2025·0 cites·20 claims
- 4567US11217672B2Method of forming a source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 4, 2022·0 cites·20 claims
- 4667US2025063813A1Semiconductor devices and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4766US2024299345A1Ginkgolide b and its derivatives for inhibiting and/or reversing agingUNIV CHINA MEDICAL·Filed 2024·Application pending·0 cites
- 4866US2025072070A1Semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4965US12278146B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 15, 2025·0 cites·20 claims
- 5065US11271096B2Method for forming fin field effect transistor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 8, 2022·0 cites·20 claims
Showing the top 50 of 71 patent records by PatentIndex Score.
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