Inventor · disambiguated record
Tzu-Hsiang Hsu
Also filed as: HSU TZU-HSIANG
31 granted patents·7 pending applications·47 citations·filing 2014–2024
95Inventor score
Top patents by PatentIndex Score
38 records- 0196US9748389B1Method for semiconductor device fabrication with improved source drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 29, 2017·12 cites·20 claims
- 0294US11677027B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·2 cites·20 claims
- 0394US10483396B1Interfacial layer between fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·10 cites·20 claims
- 0493US11581226B2Semiconductor device with tunable epitaxy structures and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 14, 2023·3 cites·20 claims
- 0590US11063152B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·4 cites·20 claims
- 0687US9780214B2Semiconductor device including Fin- FET and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 3, 2017·6 cites·18 claims
- 0783US9680017B2Semiconductor device including Fin FET and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 13, 2017·4 cites·20 claims
- 0882US2024389293A1FinFET Having Non-Merging Epitaxially Grown Source/DrainsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0982US2024387731A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1081US11996467B2Method for epitaxial growth and deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 28, 2024·0 cites·20 claims
- 1180US12419076B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 16, 2025·0 cites·20 claims
- 1279US2024395866A1Methods of forming epitaxial source/drain features in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1377US11735668B2Interfacial layer between fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·0 cites·20 claims
- 1477US11289574B2Methods of forming epitaxial source/drain features in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 29, 2022·1 cites·20 claims
- 1577US11257928B2Method for epitaxial growth and deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 22, 2022·1 cites·20 claims
- 1675US11688794B2Method for epitaxial growth and deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 27, 2023·0 cites·20 claims
- 1775US10158017B2Semiconductor structure and method for semiconductor device fabrication with improved source drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·1 cites·20 claims
- 1875US2024413018A1Semiconductor device with tunable epitaxy structures and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1974US11710792B2Semiconductor structure with improved source drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·0 cites·20 claims
- 2073US2022367480A1FinFET Having Non-Merging Epitaxially Grown Source/DrainsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2172US12154947B2Methods of forming epitaxial source/drain features in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 26, 2024·0 cites·20 claims
- 2272US11482620B2Interfacial layer between Fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 25, 2022·0 cites·20 claims
- 2372US11031498B2Semiconductor structure with improved source drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 8, 2021·0 cites·20 claims
- 2471US12112989B2Semiconductor device with tunable epitaxy structures and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
- 2571US11495606B2FinFET having non-merging epitaxially grown source/drainsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·0 cites·20 claims
- 2668US9882029B2Semiconductor device including Fin-FET and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 30, 2018·1 cites·20 claims
- 2767US10068992B2Semiconductor device including fin FET and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 4, 2018·1 cites·21 claims
- 2864US10629736B2Semiconductor structure and method for semiconductor device fabrication with improved source drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·0 cites·20 claims
- 2963US10164097B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 25, 2018·1 cites·20 claims
- 3062US10944005B2Interfacial layer between fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·0 cites·20 claims
- 3158US10854615B2FinFET having non-merging epitaxially grown source/drainsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 1, 2020·0 cites·20 claims
- 3257US10269935B2Semiconductor device including Fin-PET and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·0 cites·20 claims
- 3356US2025015191A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3452US2025006505A1Semiconductor structure including devices with different channel lengths, and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3550US12484282B2Integrated circuit, transistor and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
- 3648US11770642B2Image sensor integrated with convolutional neural network computation circuitUNIV NAT TSING HUA·Filed 2022·Granted Sep 26, 2023·0 cites·10 claims
- 3746US11264237B2Method of epitaxy and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 1, 2022·0 cites·20 claims
- 3838US11683605B2Image sensor chip and sensing method thereofEGIS TECH INC·Filed 2021·Granted Jun 20, 2023·0 cites·26 claims
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