Inventor · disambiguated record
Shinji Kunori
Also filed as: KUNORI SHINJI
21 granted patents·1 pending application·290 citations·filing 1992–2017
94Inventor score
Files withSHINDENGEN ELECTRIC MFG22
Top patents by PatentIndex Score
22 records- 0189US6573559B2Transistor and method of manufacturing the sameSHINDENGEN ELECTRIC MFG·Filed 2001·Granted Jun 3, 2003·47 cites·17 claims
- 0288US5262669ASemiconductor rectifier having high breakdown voltage and high speed operationSHINDENGEN ELECTRIC MFG·Filed 1992·Granted Nov 16, 1993·86 cites·20 claims
- 0386US6404032B1Semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2001·Granted Jun 11, 2002·42 cites·4 claims
- 0476US6841825B2Semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2003·Granted Jan 11, 2005·20 cites·10 claims
- 0575US6768138B1Diode elementSHINDENGEN ELECTRIC MFG·Filed 2003·Granted Jul 27, 2004·26 cites·6 claims
- 0674US11280812B2Semiconductor device and semiconductor componentSHINDENGEN ELECTRIC MFG·Filed 2017·Granted Mar 22, 2022·2 cites·7 claims
- 0772US6706615B2Method of manufacturing a transistorSHINDENGEN ELECTRIC MFG·Filed 2003·Granted Mar 16, 2004·15 cites·14 claims
- 0864US7196376B2Trench-type power MOSFET with embedded region at the bottom of the gate and increased breakdown voltageSHINDENGEN ELECTRIC MFG·Filed 2005·Granted Mar 27, 2007·3 cites·12 claims
- 0964US6906355B2Semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2003·Granted Jun 14, 2005·11 cites·22 claims
- 1064US5345100ASemiconductor rectifier having high breakdown voltage and high speed operationSHINDENGEN ELECTRIC MFG·Filed 1993·Granted Sep 6, 1994·25 cites·19 claims
- 1159US7365391B2Semiconductor device and method for manufacturing thereofSHINDENGEN ELECTRIC MFG·Filed 2006·Granted Apr 29, 2008·2 cites·10 claims
- 1257US11300593B2Semiconductor component, assembly and method for manufacturing semiconductor componentSHINDENGEN ELECTRIC MFG·Filed 2017·Granted Apr 12, 2022·0 cites·16 claims
- 1347US11268988B2Detection substrate, assembly, and method for manufacturing detection substrateSHINDENGEN ELECTRIC MFG·Filed 2017·Granted Mar 8, 2022·0 cites·8 claims
- 1444US7855413B2Diode with low resistance and high breakdown voltageSHINDENGEN ELECTRIC MFG·Filed 2007·Granted Dec 21, 2010·0 cites·3 claims
- 1544US7135718B2Diode device and transistor deviceSHINDENGEN ELECTRIC MFG·Filed 2003·Granted Nov 14, 2006·3 cites·14 claims
- 1644US6876034B2Semiconductor device having active groovesSHINDENGEN ELECTRIC MFG·Filed 2003·Granted Apr 5, 2005·2 cites·12 claims
- 1741US7230298B2Transistor having narrow trench filled with epitaxially-grown filling material free of voidsSHINDENGEN ELECTRIC MFG·Filed 2002·Granted Jun 12, 2007·2 cites·9 claims
- 1840US6459128B1Field-effect transistorSHINDENGEN ELECTRIC MFG·Filed 2000·Granted Oct 1, 2002·4 cites·21 claims
- 1938US7208375B2Semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2004·Granted Apr 24, 2007·0 cites·5 claims
- 2037US7573109B2Semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2006·Granted Aug 11, 2009·0 cites·14 claims
- 2136US7282764B2Semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2006·Granted Oct 16, 2007·0 cites·11 claims
- 2234US2020373379A1Semiconductor device, semiconductor component, and method for manufacturing semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →