Inventor · disambiguated record
Edward Robert Van Brunt
Also filed as: VAN BRUNT EDWARD · VAN BRUNT EDWARD R · VAN BRUNT EDWARD ROBERT
45 granted patents·21 pending applications·161 citations·filing 2013–2025
97Inventor score
Top patents by PatentIndex Score
66 records- 0198US9887287B1Power semiconductor devices having gate trenches with implanted sidewalls and related methodsCREE INC·Filed 2016·Granted Feb 6, 2018·86 cites·22 claims
- 0294US10867797B2Methods and apparatuses related to shaping wafers fabricated by ion implantationCREE INC·Filed 2019·Granted Dec 15, 2020·12 cites·16 claims
- 0393US11075264B2Super junction power semiconductor devices formed via ion implantation channeling techniques and related methodsCREE INC·Filed 2016·Granted Jul 27, 2021·8 cites·21 claims
- 0492US12402380B2Nondestructive characterization for crystalline wafersWOLFSPEED INC·Filed 2024·Granted Aug 26, 2025·1 cites·29 claims
- 0592US11810912B2Semiconductor devices having asymmetric integrated gate resistors for balanced turn-on/turn-off behaviorWOLFSPEED INC·Filed 2021·Granted Nov 7, 2023·2 cites·24 claims
- 0692US9484413B2Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctionsCREE INC·Filed 2014·Granted Nov 1, 2016·9 cites·19 claims
- 0792US9318597B2Layout configurations for integrating schottky contacts into a power transistor deviceCREE INC·Filed 2013·Granted Apr 19, 2016·15 cites·10 claims
- 0886US11057033B2Hybrid power moduleCREE INC·Filed 2019·Granted Jul 6, 2021·5 cites·22 claims
- 0985US11361454B2Alignment for wafer imagesWOLFSPEED INC·Filed 2020·Granted Jun 14, 2022·2 cites·42 claims
- 1085US10861931B2Power semiconductor devices having gate trenches and buried edge terminations and related methodsCREE INC·Filed 2016·Granted Dec 8, 2020·3 cites·21 claims
- 1184US9972677B2Methods of forming power semiconductor devices having superjunction structures with pillars having implanted sidewallsCREE INC·Filed 2016·Granted May 15, 2018·3 cites·20 claims
- 1284US2025351495A1Nondestructive characterization for crystalline wafersWOLFSPEED INC·Filed 2025·Application pending·0 cites
- 1383US9515199B2Power semiconductor devices having superjunction structures with implanted sidewallsCREE INC·Filed 2015·Granted Dec 6, 2016·3 cites·20 claims
- 1481US12040355B2Nondestructive characterization for crystalline wafersWOLFSPEED INC·Filed 2020·Granted Jul 16, 2024·1 cites·43 claims
- 1580US9425265B2Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structureCREE INC·Filed 2013·Granted Aug 23, 2016·4 cites·14 claims
- 1678US12322087B1Multi-scale autoencoders for semiconductor workpiece understandingWOLFSPEED INC·Filed 2024·Granted Jun 3, 2025·0 cites·21 claims
- 1777US12159909B2Power semiconductor device with reduced strainWOLFSPEED INC·Filed 2023·Granted Dec 3, 2024·0 cites·18 claims
- 1874US12087854B2Vertical semiconductor device with improved ruggednessWOLFSPEED INC·Filed 2022·Granted Sep 10, 2024·0 cites·28 claims
- 1973US10950719B2Seminconductor device with spreading layerCREE INC·Filed 2014·Granted Mar 16, 2021·2 cites·26 claims
- 2072US11579645B2Device design for short-circuitry protection circuitry within transistorsWOLFSPEED INC·Filed 2019·Granted Feb 14, 2023·1 cites·26 claims
- 2172US2025363621A1Multi-Scale Autoencoders for Semiconductor Workpiece UnderstandingWOLFSPEED INC·Filed 2025·Application pending·0 cites
- 2271US12393214B2Device design for short-circuit protection of transistorsWOLFSPEED INC·Filed 2023·Granted Aug 19, 2025·0 cites·26 claims
- 2371US12376332B2Edge termination structures for semiconductor devicesWOLFSPEED INC·Filed 2023·Granted Jul 29, 2025·0 cites·30 claims
- 2471US9064738B2Methods of forming junction termination extension edge terminations for high power semiconductor devices and related semiconductor devicesCREE INC·Filed 2013·Granted Jun 23, 2015·2 cites·25 claims
- 2569US12057389B2Transistor semiconductor die with increased active areaWOLFSPEED INC·Filed 2021·Granted Aug 6, 2024·0 cites·23 claims
- 2669US10847647B2Power semiconductor devices having top-side metallization structures that include buried grain stop layersCREE INC·Filed 2019·Granted Nov 24, 2020·1 cites·28 claims
- 2768US11791378B2Superjunction power semiconductor devices formed via ion implantation channeling techniques and related methodsWOLFSPEED INC·Filed 2021·Granted Oct 17, 2023·0 cites·18 claims
- 2867US11869948B2Power semiconductor device with reduced strainWOLFSPEED INC·Filed 2021·Granted Jan 9, 2024·0 cites·31 claims
- 2966US11837629B2Power semiconductor devices having gate trenches and buried edge terminations and related methodsWOLFSPEED INC·Filed 2020·Granted Dec 5, 2023·0 cites·21 claims
- 3065US11721755B2Methods of forming semiconductor power devices having graded lateral dopingWOLFSPEED INC·Filed 2022·Granted Aug 8, 2023·0 cites·26 claims
- 3165US11489069B2Vertical semiconductor device with improved ruggednessWOLFSPEED INC·Filed 2020·Granted Nov 1, 2022·0 cites·32 claims
- 3264US11417760B2Vertical semiconductor device with improved ruggednessWOLFSPEED INC·Filed 2020·Granted Aug 16, 2022·0 cites·15 claims
- 3362US11600724B2Edge termination structures for semiconductor devicesWOLFSPEED INC·Filed 2020·Granted Mar 7, 2023·0 cites·27 claims
- 3462US2024379667A1Wide bandgap semiconductor device with sensor elementWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 3560US9236433B2Semiconductor devices in SiC using vias through N-type substrate for backside contact to P-type layerCREE INC·Filed 2013·Granted Jan 12, 2016·1 cites·25 claims
- 3660US2025267893A1Silicon carbide power devices having expanded creepage distancesWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 3759US11282951B2Semiconductor power devices having graded lateral doping in the source regionWOLFSPEED INC·Filed 2020·Granted Mar 22, 2022·0 cites·22 claims
- 3859US2021066081A1Methods and apparatuses related to shaping wafers fabricated by ion implantationCREE INC·Filed 2020·Application pending·0 cites
- 3958US10103230B2Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctionsCREE INC·Filed 2016·Granted Oct 16, 2018·0 cites·12 claims
- 4057US12074079B2Wide bandgap semiconductor device with sensor elementWOLFSPEED INC·Filed 2021·Granted Aug 27, 2024·0 cites·25 claims
- 4157US2025234619A1Power Semiconductor Device Having Improved Transient Handling Without Field Insulating LayerWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 4256US11164813B2Transistor semiconductor die with increased active areaCREE INC·Filed 2019·Granted Nov 2, 2021·0 cites·35 claims
- 4356US10615274B2Vertical semiconductor device with improved ruggednessCREE INC·Filed 2017·Granted Apr 7, 2020·0 cites·14 claims
- 4456US2025266304A1Semiconductor Wafer with Process Control Monitor StructuresWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 4556US2024274660A1Power semiconductor devices having non-rectangular semiconductor die for enhanced mechanical robustness and reduced stress and electric field concentrationsWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 4656US2023418319A1Semiconductor transistors having minimum gate-to-source voltage clamp circuitsWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 4755US11662371B2Semiconductor devices for improved measurements and related methodsWOLFSPEED INC·Filed 2020·Granted May 30, 2023·0 cites·27 claims
- 4855US2024429323A1Low reverse leakage current power schottky diodes having reduced current crowding at the lower blocking junction cornersWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 4955US2024355897A1Semiconductor devices with low barrier height schottky contactsWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 5054US11282927B2Contact structures for semiconductor devicesCREE INC·Filed 2020·Granted Mar 22, 2022·0 cites·36 claims
Showing the top 50 of 66 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →