Inventor · disambiguated record
Xianyong Pu
Also filed as: PU XIANYONG
16 granted patents·4 pending applications·25 citations·filing 2007–2023
89Inventor score
Files withSEMICONDUCTOR MFG INT SHANGHAI CORP7SEMICONDUCTOR MFG INT SHANGHAI5SEMICONDUCTOR MFG INT BEIJING3SEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION3HUANG HERB HE2
Top patents by PatentIndex Score
20 records- 0184US8058175B2Method for planarization of wafer and method for formation of isolation structure in top metal layerHUANG HERB HE·Filed 2007·Granted Nov 15, 2011·10 cites·19 claims
- 0280US9514881B2Semiconductor structure and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Dec 6, 2016·3 cites·13 claims
- 0378US9653344B2Device isolation structure and manufacture methodSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted May 16, 2017·3 cites·10 claims
- 0476US9112025B2LDMOS device and fabrication methodSEMICONDUCTOR MFG INT BEIJING·Filed 2014·Granted Aug 18, 2015·5 cites·20 claims
- 0562US9647110B2Layout for LDMOSSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted May 9, 2017·1 cites·16 claims
- 0662US7995165B2LCOS display unit and method for forming the sameSEMICONDUCTOR MFG INT SHANGHAI·Filed 2007·Granted Aug 9, 2011·2 cites·4 claims
- 0756US9142446B2Semiconductor devices and fabrication methods thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Sep 22, 2015·1 cites·20 claims
- 0851US9640479B2Method for fabricating semiconductor structureSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted May 2, 2017·0 cites·20 claims
- 0950US9870916B2LDMOS transistorSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2017·Granted Jan 16, 2018·0 cites·14 claims
- 1050US2012009794A1Method for Planarization of Wafer and Method for Formation of Isolation Structure in Top Metal LayerHUANG HERB HE·Filed 2011·Application pending·0 cites
- 1149US10615259B2Semiconductor device, related manufacturing method, and related electronic deviceSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted Apr 7, 2020·0 cites·20 claims
- 1248US9824914B2Method for manufacturing a device isolation structureSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2017·Granted Nov 21, 2017·0 cites·6 claims
- 1348US2024030129A1Semiconductor device and formation method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2023·Application pending·0 cites
- 1447US9691604B2LDMOS transistor and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Jun 27, 2017·0 cites·19 claims
- 1547US8379183B2LCOS display unit and method for forming the sameSEMICONDUCTOR MFG INT SHANGHAI·Filed 2011·Granted Feb 19, 2013·0 cites·13 claims
- 1647US7938979B2Method of fabricating mirrors for liquid crystal on silicon display deviceSEMICONDUCTOR MFG INT SHANGHAI·Filed 2007·Granted May 10, 2011·0 cites·19 claims
- 1746US9859372B2Semiconductor device, related manufacturing method, and related electronic deviceSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2016·Granted Jan 2, 2018·0 cites·8 claims
- 1837US2015041948A1Semiconductor device including sti structure and method for forming the sameSEMICONDUCTOR MFG INT BEIJING·Filed 2014·Application pending·0 cites
- 1936US2015179571A1Metal interconnect structures and fabrication method thereofSEMICONDUCTOR MFG INT BEIJING·Filed 2014·Application pending·0 cites
- 2029US9263273B2Method for manufacturing semiconductor deviceSEMICONDUCTOR MFG INT SHANGHAI·Filed 2015·Granted Feb 16, 2016·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →