Inventor · disambiguated record
Yasuhisa Ushida
Also filed as: USHIDA YASUHISA
11 granted patents·5 pending applications·103 citations·filing 2004–2015
86Inventor score
Top patents by PatentIndex Score
16 records- 0195US8546836B2Light-emitting elementKAMIYA MASAO·Filed 2011·Granted Oct 1, 2013·76 cites·7 claims
- 0286US8518806B2Method for producing group III nitride-based compound semiconductor, wafer including group III nitride-based compound semiconductor, and group III nitrided-based compound semiconductor deviceOKUNO KOJI·Filed 2009·Granted Aug 27, 2013·15 cites·29 claims
- 0375US7524741B2Method of forming a low temperature-grown buffer layer, a light emitting element and method of making same, and light emitting deviceTOYODA GOSEI KK·Filed 2006·Granted Apr 28, 2009·6 cites·14 claims
- 0469US8680581B2Method for producing group III nitride semiconductor and template substrateNAKADA NAOYUKI·Filed 2009·Granted Mar 25, 2014·3 cites·34 claims
- 0563US8945965B2Method for producing a group III nitride semiconductor light-emitting deviceNAKADA NAOYUKI·Filed 2012·Granted Feb 3, 2015·1 cites·13 claims
- 0659US8980657B2Method for producing a group III nitride semiconductor light-emitting deviceBOYAMA SHINYA·Filed 2012·Granted Mar 17, 2015·2 cites·13 claims
- 0756US9196687B2Method for producing group III nitride semiconductor and template substrateTOYODA GOSEI KK·Filed 2014·Granted Nov 24, 2015·0 cites·8 claims
- 0853US9318559B2Method for producing group III nitride semiconductor and template substrateTOYODA GOSEI KK·Filed 2015·Granted Apr 19, 2016·0 cites·6 claims
- 0951US8928001B2Group III nitride compound semiconductor light emitting element and method for producing the sameTOYODA GOSEI KK·Filed 2013·Granted Jan 6, 2015·0 cites·11 claims
- 1048US7948061B2Group III nitride-based compound semiconductor deviceTOYODA GOSEI KK·Filed 2008·Granted May 24, 2011·0 cites·19 claims
- 1144US2009039373A1Group III nitride-based compound semiconductor light emitting deviceTOYODA GOSEI KK·Filed 2008·Application pending·0 cites
- 1244US2013328097A1Group iii nitride semiconductor light-emitting elementTOYODA GOSEI KK·Filed 2013·Application pending·0 cites
- 1342US2011244610A1Method for producing group iii nitride semiconductor light-emitting deviceTOYODA GOSEI KK·Filed 2011·Application pending·0 cites
- 1441US2005076828A1Process for fabrication of III nitride-based compound semiconductorsTOYODA GOSEI KK·Filed 2004·Application pending·0 cites
- 1540US8598599B2Group III nitride semiconductor light-emitting deviceSAITO YOSHIKI·Filed 2011·Granted Dec 3, 2013·0 cites·17 claims
- 1639US2010244042A1Group III nitride compound semiconductor light emitting element and manufacturing method thereofTOYODA GOSEI KK·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →