Inventor · disambiguated record
Khalid Ezzeldin Ismail
Also filed as: ISMAIL KHALID · ISMAIL KHALID EZZELDIN
20 granted patents·2,683 citations·filing 1989–2006
97Inventor score
Top patents by PatentIndex Score
20 records- 0199US6350993B1High speed composite p-channel Si/SiGe heterostructure for field effect devicesIBM·Filed 1999·Granted Feb 26, 2002·404 cites·41 claims
- 0298US7906413B2Abrupt “delta-like” doping in Si and SiGe films by UHV-CVDIBM·Filed 2006·Granted Mar 15, 2011·137 cites·13 claims
- 0398US6059895AStrained Si/SiGe layers on insulatorIBM·Filed 1999·Granted May 9, 2000·397 cites·4 claims
- 0497US6251751B1Bulk and strained silicon on insulator using local selective oxidationIBM·Filed 1999·Granted Jun 26, 2001·239 cites·20 claims
- 0597US5963817ABulk and strained silicon on insulator using local selective oxidationIBM·Filed 1997·Granted Oct 5, 1999·251 cites·24 claims
- 0697US5906951AStrained Si/SiGe layers on insulatorIBM·Filed 1997·Granted May 25, 1999·304 cites·7 claims
- 0797US5714777ASi/SiGe vertical junction field effect transistorIBM·Filed 1997·Granted Feb 3, 1998·218 cites·25 claims
- 0896US6096590AScalable MOS field effect transistorIBM·Filed 1998·Granted Aug 1, 2000·184 cites·37 claims
- 0996US6013134AAdvance integrated chemical vapor deposition (AICVD) for semiconductor devicesIBM·Filed 1998·Granted Jan 11, 2000·155 cites·7 claims
- 1092US6425951B1Advance integrated chemical vapor deposition (AICVD) for semiconductorIBM·Filed 1999·Granted Jul 30, 2002·85 cites·13 claims
- 1191US5808344ASingle-transistor logic and CMOS invertersIBM·Filed 1997·Granted Sep 15, 1998·95 cites·16 claims
- 1289US6858502B2High speed composite p-channel Si/SiGe heterostructure for field effect devicesIBM·Filed 2001·Granted Feb 22, 2005·39 cites·30 claims
- 1386US6784466B2Si/SiGe optoelectronic integrated circuitsIBM·Filed 2002·Granted Aug 31, 2004·34 cites·34 claims
- 1479US7083998B2Si/SiGe optoelectronic integrated circuitsIBM·Filed 2004·Granted Aug 1, 2006·20 cites·17 claims
- 1578US6723621B1Abrupt delta-like doping in Si and SiGe films by UHV-CVDIBM·Filed 1997·Granted Apr 20, 2004·45 cites·8 claims
- 1674US5955759AReduced parasitic resistance and capacitance field effect transistorIBM·Filed 1997·Granted Sep 21, 1999·47 cites·29 claims
- 1770US7067855B2Semiconductor structure having an abrupt doping profileIBM·Filed 2003·Granted Jun 27, 2006·10 cites·9 claims
- 1860US6870232B1Scalable MOS field effect transistorIBM·Filed 2000·Granted Mar 22, 2005·9 cites·9 claims
- 1951US7084431B2High speed composite p-channel Si/SiGe heterostructure for field effect devicesIBM·Filed 2004·Granted Aug 1, 2006·3 cites·15 claims
- 2036US5256579ATunable-frequency Gunn diodes fabrication with focused ion beamsMASSACHUSETTS INST TECHNOLOGY·Filed 1989·Granted Oct 26, 1993·7 cites·39 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →