Inventor · disambiguated record
Swaroop Kaza
Also filed as: KAZA SWAROOP
29 granted patents·2 pending applications·123 citations·filing 2004–2024
95Inventor score
Files withSPANSION LLC15SANDISK TECHNOLOGIES LLC5WESTERN DIGITAL TECH INC5KAZA SWAROOP2AVANZINO STEVEN1
Top patents by PatentIndex Score
31 records- 0196US10235294B1Pre-read voltage pulse for first read error handlingSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Mar 19, 2019·36 cites·20 claims
- 0287US11923019B2Data retention reliabilitySANDISK TECHNOLOGIES LLC·Filed 2022·Granted Mar 5, 2024·2 cites·20 claims
- 0383US7355886B1Method of programming, erasing and reading memory cells in a resistive memory arraySPANSION LLC·Filed 2006·Granted Apr 8, 2008·15 cites·25 claims
- 0479US9449690B2Modified local segmented self-boosting of memory cell channelsCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Sep 20, 2016·6 cites·19 claims
- 0578US7579631B2Variable breakdown characteristic diodeSPANSION LLC·Filed 2005·Granted Aug 25, 2009·5 cites·23 claims
- 0670US7474579B2Use of periodic refresh in medium retention memory arraysSPANSION LLC·Filed 2006·Granted Jan 6, 2009·7 cites·20 claims
- 0770US7378682B2Memory element using active layer of blended materialsSPANSON LLC·Filed 2005·Granted May 27, 2008·4 cites·10 claims
- 0868US7564708B2Method of programming memory deviceSPANSION LLC·Filed 2006·Granted Jul 21, 2009·6 cites·12 claims
- 0965US10734084B2Scheme to reduce read disturb for high read intensive blocks in non-volatile memoryWESTERN DIGITAL TECH INC·Filed 2019·Granted Aug 4, 2020·1 cites·18 claims
- 1065US7450416B1Utilization of memory-diode which may have each of a plurality of different memory statesSPANSION LLC·Filed 2004·Granted Nov 11, 2008·13 cites·37 claims
- 1163US10643710B2Enhanced erase retry of non-volatile storage deviceWESTERN DIGITAL TECH INC·Filed 2017·Granted May 5, 2020·2 cites·20 claims
- 1263US7269050B2Method of programming a memory deviceSPANSION LLC·Filed 2005·Granted Sep 11, 2007·5 cites·17 claims
- 1362US8828837B2Metal-insulator-metal (MIM) device and method of formation thereofSPANSION LLC·Filed 2013·Granted Sep 9, 2014·0 cites·4 claims
- 1460US8482959B2Method of programming, erasing and repairing a memory deviceKAZA SWAROOP·Filed 2011·Granted Jul 9, 2013·2 cites·20 claims
- 1560US7646624B2Method of selecting operating characteristics of a resistive memory deviceSPANSION LLC·Filed 2006·Granted Jan 12, 2010·4 cites·20 claims
- 1659US2025323231A1Adaptable memory system with multiple chipletsWESTERN DIGITAL TECH INC·Filed 2024·Application pending·0 cites
- 1755US11972813B2Systems and methods for adapting sense timeSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 30, 2024·0 cites·17 claims
- 1855US11862260B2Audit techniques for read disturb detection in an open memory blockSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 1955US9012299B2Metal-insualtor-metal (MIM) device and method of formation thereofSPANSION LLC·Filed 2014·Granted Apr 21, 2015·0 cites·4 claims
- 2054US7102156B1Memory elements using organic active layerSPANSION LLC ADVANCED MICRO DE·Filed 2004·Granted Sep 5, 2006·6 cites·15 claims
- 2153US7379317B2Method of programming, reading and erasing memory-diode in a memory-diode arraySPANSION LLC·Filed 2004·Granted May 27, 2008·7 cites·26 claims
- 2250US12347494B2On-chip performance throttlingWESTERN DIGITAL TECH INC·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 2348US11475958B2Negative bit line biasing during quick pass write programmingSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Oct 18, 2022·0 cites·20 claims
- 2447US12374403B2Optimized read current consumption based on lower page read information for non-volatile memory apparatusWESTERN DIGITAL TECH INC·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 2547US7902086B2Prevention of oxidation of carrier ions to improve memory retention properties of polymer memory cellSPANSION LLC·Filed 2006·Granted Mar 8, 2011·0 cites·19 claims
- 2645US8445913B2Metal-insulator-metal (MIM) device and method of formation thereofAVANZINO STEVEN·Filed 2007·Granted May 21, 2013·0 cites·11 claims
- 2740US7706168B2Erase, programming and leakage characteristics of a resistive memory deviceSPANSION LLC·Filed 2007·Granted Apr 27, 2010·0 cites·19 claims
- 2840US7208757B1Memory element with nitrogen-containing active layerSPANSION LLC·Filed 2004·Granted Apr 24, 2007·2 cites·2 claims
- 2937US8077495B2Method of programming, erasing and repairing a memory deviceKAZA SWAROOP·Filed 2006·Granted Dec 13, 2011·0 cites·7 claims
- 3037US7916523B2Method of erasing a resistive memory deviceSPANSION LLC·Filed 2006·Granted Mar 29, 2011·0 cites·23 claims
- 3134US2007007585A1Memory device with improved data retentionSPANSION LLC·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →