Inventor · disambiguated record
Ricardo A. Donaton
Also filed as: DONATON RICARDO A · DONATON RICARDO ALVES
26 granted patents·5 pending applications·388 citations·filing 1996–2021
96Inventor score
Top patents by PatentIndex Score
31 records- 0198US8227307B2Method for removing threshold voltage adjusting layer with external acid diffusion processCHEN KUANG-JUNG·Filed 2009·Granted Jul 24, 2012·101 cites·20 claims
- 0298US8138037B2Method and structure for gate height scaling with high-k/metal gate technologyCHUDZIK MICHAEL P·Filed 2010·Granted Mar 20, 2012·43 cites·16 claims
- 0394US7691712B2Semiconductor device structures incorporating voids and methods of fabricating such structuresIBM·Filed 2006·Granted Apr 6, 2010·32 cites·26 claims
- 0490US7791144B2High performance stress-enhance MOSFET and method of manufactureIBM·Filed 2009·Granted Sep 7, 2010·28 cites·18 claims
- 0589US10037998B2Semiconductor structures with deep trench capacitor and methods of manufactureIBM·Filed 2017·Granted Jul 31, 2018·4 cites·17 claims
- 0689US7560326B2Silicon/silcion germaninum/silicon body device with embedded carbon dopantIBM·Filed 2006·Granted Jul 14, 2009·18 cites·2 claims
- 0789US7371684B2Process for preparing electronics structures using a sacrificial multilayer hardmask schemeIBM·Filed 2005·Granted May 13, 2008·12 cites·21 claims
- 0886US8227870B2Method and structure for gate height scaling with high-k/metal gate technologyCHUDZIK MICHAEL P·Filed 2012·Granted Jul 24, 2012·7 cites·10 claims
- 0985US7498271B1Nitrogen based plasma process for metal gate MOS deviceIBM·Filed 2008·Granted Mar 3, 2009·10 cites·2 claims
- 1083US11657314B1Microwave-to-optical quantum transducersIBM·Filed 2021·Granted May 23, 2023·1 cites·20 claims
- 1182US8349729B2Hybrid bonding interface for 3-dimensional chip integrationIBM·Filed 2012·Granted Jan 8, 2013·6 cites·20 claims
- 1281US8159060B2Hybrid bonding interface for 3-dimensional chip integrationBARTH KARL W·Filed 2009·Granted Apr 17, 2012·10 cites·11 claims
- 1380US7863123B2Direct contact between high-κ/metal gate and wiring process flowIBM·Filed 2009·Granted Jan 4, 2011·8 cites·20 claims
- 1480US7709910B2Semiconductor structure for low parasitic gate capacitanceIBM·Filed 2007·Granted May 4, 2010·8 cites·4 claims
- 1578US7947907B2Electronics structures using a sacrificial multi-layer hardmask schemeIBM·Filed 2008·Granted May 24, 2011·5 cites·20 claims
- 1676US9679917B2Semiconductor structures with deep trench capacitor and methods of manufactureIBM·Filed 2014·Granted Jun 13, 2017·2 cites·20 claims
- 1776US7875511B2CMOS structure including differential channel stressing layer compositionsIBM·Filed 2007·Granted Jan 25, 2011·9 cites·20 claims
- 1876US7608489B2High performance stress-enhance MOSFET and method of manufactureIBM·Filed 2006·Granted Oct 27, 2009·12 cites·10 claims
- 1975US6255227B1Etching process of CoSi2 layersIMEC INTER UNI MICRO ELECTR·Filed 2000·Granted Jul 3, 2001·17 cites·10 claims
- 2072US6844266B2Anisotropic etching of organic-containing insulating layersIMEC INTER UNI MICRO ELECTR·Filed 2003·Granted Jan 18, 2005·15 cites·8 claims
- 2170US6153484AEtching process of CoSi2 layersIMEC VZW·Filed 1996·Granted Nov 28, 2000·36 cites·5 claims
- 2261US10707217B2Semiconductor structures with deep trench capacitor and methods of manufactureIBM·Filed 2018·Granted Jul 7, 2020·0 cites·20 claims
- 2359US9299766B2DT capacitor with silicide outer electrode and/or compressive stress layer, and related methodsIBM·Filed 2014·Granted Mar 29, 2016·0 cites·11 claims
- 2456US9653535B2DT capacitor with silicide outer electrode and/or compressive stress layer, and related methodsIBM·Filed 2015·Granted May 16, 2017·0 cites·8 claims
- 2555US9496329B2DT capacitor with silicide outer electrode and/or compressive stress layer, and related methodsIBM·Filed 2015·Granted Nov 15, 2016·0 cites·4 claims
- 2654US7615418B2High performance stress-enhance MOSFET and method of manufactureIBM·Filed 2006·Granted Nov 10, 2009·4 cites·10 claims
- 2747US2023058638A1Solder creep limiting rigid spacer for stacked die c4 packagingIBM·Filed 2021·Application pending·0 cites
- 2843US2016181249A1Semiconductor structures with deep trench capacitor and methods of manufactureIBM·Filed 2014·Application pending·0 cites
- 2943US2007232048A1Damascene interconnection having a SiCOH low k layerMIYATA KOJI·Filed 2006·Application pending·0 cites
- 3042US2008040697A1Design Structure Incorporating Semiconductor Device Structures with VoidsIBM·Filed 2007·Application pending·0 cites
- 3135US2002076935A1Anisotropic etching of organic-containing insulating layersFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →