Inventor · disambiguated record
James K. Schaeffer
Also filed as: SCHAEFFER III JAMES K · SCHAEFFER III JAMES KENYON · SCHAEFFER JAMES · SCHAEFFER JAMES K
24 granted patents·6 pending applications·1,111 citations·filing 1999–2012
96Inventor score
Files withFREESCALE SEMICONDUCTOR INC13INTERSTATE HIGHWAY CONSTRUCTIO3MOTOROLA INC3ANDO TAKASHI2CHOWDHURY MURSHED M2
Top patents by PatentIndex Score
30 records- 0197US7132360B2Method for treating a semiconductor surface to form a metal-containing layerFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Nov 7, 2006·590 cites·33 claims
- 0297US7109079B2Metal gate transistor CMOS process and method for makingFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 19, 2006·71 cites·18 claims
- 0397US6541280B2High K dielectric filmMOTOROLA INC·Filed 2001·Granted Apr 1, 2003·190 cites·19 claims
- 0491US8309419B2CMOS integration with metal gate and doped high-K oxidesSCHAEFFER JAMES K·Filed 2009·Granted Nov 13, 2012·29 cites·22 claims
- 0590US7015153B1Method for forming a layer using a purging gas in a semiconductor processFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Mar 21, 2006·56 cites·19 claims
- 0689US7691701B1Method of forming gate stack and structure thereofIBM·Filed 2009·Granted Apr 6, 2010·16 cites·27 claims
- 0787US7655550B2Method of making metal gate transistorsFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Feb 2, 2010·14 cites·19 claims
- 0887US7445981B1Method for forming a dual metal gate structureFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Nov 4, 2008·15 cites·20 claims
- 0983US6576967B1Semiconductor structure and process for forming a metal oxy-nitride dielectric layerMOTOROLA INC·Filed 2000·Granted Jun 10, 2003·28 cites·17 claims
- 1081US7445976B2Method of forming a semiconductor device having an interlayer and structure thereforFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Nov 4, 2008·9 cites·22 claims
- 1179US8735996B2Scavenging metal stack for a high-K gate dielectricANDO TAKASHI·Filed 2012·Granted May 27, 2014·4 cites·7 claims
- 1279US7648884B2Semiconductor device with integrated resistive element and method of makingFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jan 19, 2010·9 cites·18 claims
- 1376US8114739B2Semiconductor device with oxygen-diffusion barrier layer and method for fabricating sameCHOWDHURY MURSHED M·Filed 2009·Granted Feb 14, 2012·6 cites·19 claims
- 1476US7303983B2ALD gate electrodeFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Dec 4, 2007·6 cites·20 claims
- 1575US6213680B1Apparatus and method for integrated pavement markingINTERSTATE HIGHWAY CONSTRUCTIO·Filed 1999·Granted Apr 10, 2001·46 cites·81 claims
- 1671US8853792B2Transistors and semiconductor devices with oxygen-diffusion barrier layersCHOWDHURY MURSHED M·Filed 2012·Granted Oct 7, 2014·3 cites·10 claims
- 1769US7666730B2Method for forming a dual metal gate structureFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Feb 23, 2010·4 cites·20 claims
- 1867US8415212B2Method of enhancing photoresist adhesion to rare earth oxidesSCHAEFFER JAMES K·Filed 2010·Granted Apr 9, 2013·3 cites·20 claims
- 1958US7683439B2Semiconductor device having a metal carbide gate with an electropositive element and a method of making the sameFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Mar 23, 2010·1 cites·9 claims
- 2054US6949455B2Method for forming a semiconductor device structure a semiconductor layerFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Sep 27, 2005·6 cites·5 claims
- 2152US6987063B2Method to reduce impurity elements during semiconductor film depositionFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jan 17, 2006·3 cites·32 claims
- 2249US8716088B2Scavenging metal stack for a high-K gate dielectricANDO TAKASHI·Filed 2012·Granted May 6, 2014·0 cites·7 claims
- 2346US6743668B2Process for forming a metal oxy-nitride dielectric layer by varying the flow rate of nitrogen into the chamberMOTOROLA INC·Filed 2003·Granted Jun 1, 2004·2 cites·11 claims
- 2443US7910442B2Process for making a semiconductor device using partial etchingFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Mar 22, 2011·0 cites·20 claims
- 2538US2007096226A1MOSFET dielectric including a diffusion barrierLIU CHUN-LI·Filed 2005·Application pending·0 cites
- 2636US2009286387A1Modulation of Tantalum-Based Electrode WorkfunctionGILMER DAVID C·Filed 2008·Application pending·0 cites
- 2736US2014187051A1Poly Removal for replacement gate with an APM mixtureINTERMOLECULAR INC·Filed 2012·Application pending·0 cites
- 2835US2005095763A1Method of forming an NMOS transistor and structure thereofFiled 2003·Application pending·0 cites
- 2933US2001002229A1Method for integrated pavement markingINTERSTATE HIGHWAY CONSTRUCTIO·Filed 2000·Application pending·0 cites
- 3033US2001001030A1Grout preparation and dispensing apparatus for integrated pavement markingINTERSTATE HIGHWAY CONSTRUCTIO·Filed 2000·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →