Inventor · disambiguated record
Jean-Francois Damlencourt
Also filed as: DAMLENCOURT JEAN-FRANCOIS · DAMLENCOURT JEAN-FRANÇOIS
15 granted patents·2 pending applications·165 citations·filing 2005–2014
91Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE14DAMLENCOURT JEAN-FRANÇOIS1SARACCO EMELINE1VINCENT BENJAMIN1
Top patents by PatentIndex Score
17 records- 0196US7598145B2Method for producing Si1-yGey based zones with different contents in Ge on a same substrate by condensation of germaniumCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Oct 6, 2009·53 cites·8 claims
- 0293US8349667B2Method for stabilizing germanium nanowires obtained by condensationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2010·Granted Jan 8, 2013·25 cites·10 claims
- 0392US7601570B2Method for producing a device comprising a structure equipped with one or more microwires or nanowires based on a Si and Ge compound by germanium condensationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Oct 13, 2009·30 cites·20 claims
- 0489US8513125B2Manufacturing a microelectronic device comprising silicon and germanium nanowires integrated on a same substrateSARACCO EMELINE·Filed 2010·Granted Aug 20, 2013·21 cites·15 claims
- 0581US7427779B2Microstructure for formation of a silicon and germanium on insulator substrate of Si1-XGeX typeCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Sep 23, 2008·17 cites·9 claims
- 0673US9040391B2Process for producing localised GeOI structures, obtained by germanium condensationDAMLENCOURT JEAN-FRANÇOIS·Filed 2009·Granted May 26, 2015·8 cites·5 claims
- 0773US7759175B2Fabrication method of a mixed substrate and use of the substrate for producing circuitsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Jul 20, 2010·4 cites·12 claims
- 0872US7030043B2Process for deposition of a thin layer on an oxidized layer of a substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted Apr 18, 2006·2 cites·11 claims
- 0970US7972971B2Method for producing Si1-yGey based zones with different contents in Ge on a same substrate by condensation of germaniumCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Jul 5, 2011·3 cites·20 claims
- 1057US7989327B2Manufacturing method for a semi-conductor on insulator substrate comprising a localised Ge enriched stepCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Aug 2, 2011·1 cites·13 claims
- 1155US8247313B2Method for preparing a germanium layer from a silicon-germanium-on-isolator substrateVINCENT BENJAMIN·Filed 2008·Granted Aug 21, 2012·1 cites·13 claims
- 1252US10622640B2Current collector with integrated leak-proofing means, bipolar battery comprising such a collectorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Apr 14, 2020·0 cites·11 claims
- 1350US2015180038A1Bipolar Li-Ion Battery with Improved Seal and Associated Production ProcessCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Application pending·0 cites
- 1449US9991548B2Bipolar li-ion battery with improved leaktightness and associated method of productionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Jun 5, 2018·0 cites·14 claims
- 1547US7648893B2Method for manufacturing a semiconductor-on-insulator substrate for microelectronics and optoelectronicsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Jan 19, 2010·0 cites·7 claims
- 1636US2007207598A1Method for producing a substrate by germanium condensationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Application pending·0 cites
- 1732US7494831B2Process for making stacks of islands made of one semiconducting material encapsulated in another semiconducting materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted Feb 24, 2009·0 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →