Inventor · disambiguated record
Gyu-Chul Kim
Also filed as: KIM GYU C · KIM GYU-CHUL
20 granted patents·4 pending applications·441 citations·filing 1990–2019
95Inventor score
Files withSAMSUNG ELECTRONICS CO LTD18CYPRESS SEMICONDUCTOR CORP2RYOO MAN-HYOUNG2Longitude Flash Memory Solutions Ltd1SEAGATE TECHNOLOGY LLC1
Top patents by PatentIndex Score
24 records- 0197US7221031B2Semiconductor device having sufficient process margin and method of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 22, 2007·115 cites·15 claims
- 0295USD334738SLap top computerSAMSUNG ELECTRONICS CO LTD·Filed 1990·Granted Apr 13, 1993·84 cites·1 claims
- 0395USD332944SLap top computerSAMSUNG ELECTRONICS CO LTD·Filed 1990·Granted Feb 2, 1993·83 cites·1 claims
- 0486US5323379ADisk clamping apparatus including a clamp having a plurality of clamp jaws movable horizontallySAMSUNG ELECTRONICS CO LTD·Filed 1992·Granted Jun 21, 1994·40 cites·22 claims
- 0585US9123642B1Method of forming drain extended MOS transistors for high voltage circuitsCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Sep 1, 2015·5 cites·16 claims
- 0680US10217639B1Method of forming drain extended MOS transistors for high voltage circuitsCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted Feb 26, 2019·2 cites·17 claims
- 0778US9799401B2Incremental step pulse programmingSEAGATE TECHNOLOGY LLC·Filed 2014·Granted Oct 24, 2017·6 cites·15 claims
- 0875US7105917B2Semiconductor device having a fuse connected to a pad and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 12, 2006·24 cites·6 claims
- 0969US6399987B2MOS transistor having self-aligned well bias areaSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 4, 2002·16 cites·6 claims
- 1067US9673195B2Semiconductor device having sufficient process margin and method of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 6, 2017·1 cites·9 claims
- 1167US8193047B2Semiconductor device having sufficient process margin and method of forming sameRYOO MAN-HYOUNG·Filed 2010·Granted Jun 5, 2012·2 cites·20 claims
- 1267US7183662B2Memory devices with memory cell transistors having gate sidewell spacers with different dielectric propertiesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 27, 2007·18 cites·24 claims
- 1358US2019355583A1Method of forming drain extended mos transistors for high voltage circuitsLongitude Flash Memory Solutions Ltd·Filed 2019·Application pending·0 cites
- 1454US5328860AMethod of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1993·Granted Jul 12, 1994·14 cites·5 claims
- 1552US7112856B2Semiconductor device having a merged region and method of fabricationSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 26, 2006·5 cites·16 claims
- 1651US2007190812A1Semiconductor device having sufficient process margin and method of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1745US6724052B2Semiconductor device and method of fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 20, 2004·4 cites·40 claims
- 1845US5278084AMethod of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1992·Granted Jan 11, 1994·10 cites·11 claims
- 1945US2011156159A1Semiconductor device having sufficient process margin and method of forming sameRYOO MAN-HYOUNG·Filed 2011·Application pending·0 cites
- 2043US2006189088A1Semiconductor device having a merged region and method of fabricationSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2138US7560353B2Methods of fabricating memory devices with memory cell transistors having gate sidewall spacers with different dielectric propertiesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 14, 2009·0 cites·17 claims
- 2238US6355515B1Wiring structure of semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Mar 12, 2002·8 cites·6 claims
- 2336US6759748B2Wiring structure of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jul 6, 2004·0 cites·14 claims
- 2435US5717227ABipolar junction transistors having insulated gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Feb 10, 1998·4 cites·18 claims
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