Inventor · disambiguated record
Kaihan Ashtiani
Also filed as: ASHTIANI KAIHAN · ASHTIANI KAIHAN A · ASHTIANI KAIHAN ABIDI
37 granted patents·7 pending applications·2,762 citations·filing 1996–2023
98Inventor score
Top patents by PatentIndex Score
44 records- 0198US8043972B1Adsorption based material removal processNOVELLUS SYSTEMS INC·Filed 2008·Granted Oct 25, 2011·537 cites·29 claims
- 0298US7955972B2Methods for growing low-resistivity tungsten for high aspect ratio and small featuresNOVELLUS SYSTEMS INC·Filed 2008·Granted Jun 7, 2011·87 cites·22 claims
- 0398US7691749B2Deposition of tungsten nitrideNOVELLUS SYSTEMS INC·Filed 2005·Granted Apr 6, 2010·97 cites·18 claims
- 0498US7416989B1Adsorption based material removal processNOVELLUS SYSTEMS INC·Filed 2006·Granted Aug 26, 2008·378 cites·30 claims
- 0597US8409985B2Methods for growing low-resistivity tungsten for high aspect ratio and small featuresCHAN LANA HIULUI·Filed 2011·Granted Apr 2, 2013·59 cites·21 claims
- 0697US8367546B2Methods for forming all tungsten contacts and linesNOVELLUS SYSTEMS INC·Filed 2011·Granted Feb 5, 2013·42 cites·20 claims
- 0797US8053365B2Methods for forming all tungsten contacts and linesNOVELLUS SYSTEMS INC·Filed 2007·Granted Nov 8, 2011·66 cites·27 claims
- 0897US7141494B2Method for reducing tungsten film roughness and improving step coverageNOVELLUS SYSTEMS INC·Filed 2003·Granted Nov 28, 2006·147 cites·32 claims
- 0997US7005372B2Deposition of tungsten nitrideNOVELLUS SYSTEMS INC·Filed 2003·Granted Feb 28, 2006·187 cites·46 claims
- 1097US6179973B1Apparatus and method for controlling plasma uniformity across a substrateNOVELLUS SYSTEMS INC·Filed 1999·Granted Jan 30, 2001·167 cites·20 claims
- 1196US8409987B2Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristicsCHANDRASHEKAR ANAND·Filed 2011·Granted Apr 2, 2013·34 cites·19 claims
- 1296US8058170B2Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristicsCHANDRASHEKAR ANAND·Filed 2009·Granted Nov 15, 2011·83 cites·21 claims
- 1396US6193854B1Apparatus and method for controlling erosion profile in hollow cathode magnetron sputter sourceNOVELLUS SYSTEMS INC·Filed 1999·Granted Feb 27, 2001·145 cites·34 claims
- 1495US9447499B2Dual plenum, axi-symmetric showerhead with edge-to-center gas deliveryROY SHAMBHU N·Filed 2012·Granted Sep 20, 2016·24 cites·19 claims
- 1595US7262125B2Method of forming low-resistivity tungsten interconnectsNOVELLUS SYSTEMS INC·Filed 2004·Granted Aug 28, 2007·91 cites·32 claims
- 1695US5669975APlasma producing method and apparatus including an inductively-coupled plasma sourceSONY CORP·Filed 1996·Granted Sep 23, 1997·107 cites·41 claims
- 1794US8846536B2Flowable oxide film with tunable wet etch rateDRAEGER NERISSA·Filed 2012·Granted Sep 30, 2014·42 cites·22 claims
- 1894US8728958B2Gap fill integrationASHTIANI KAIHAN·Filed 2010·Granted May 20, 2014·26 cites·23 claims
- 1993US11049716B2Gap fill using carbon-based filmsLAM RES CORP·Filed 2018·Granted Jun 29, 2021·11 cites·13 claims
- 2093US10262943B2Interlevel conductor pre-fill utilizing selective barrier depositionLAM RES CORP·Filed 2018·Granted Apr 16, 2019·7 cites·19 claims
- 2193US9583386B2Interlevel conductor pre-fill utilizing selective barrier depositionLAM RES CORP·Filed 2015·Granted Feb 28, 2017·8 cites·21 claims
- 2293US6500321B1Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering targetNOVELLUS SYSTEMS INC·Filed 2000·Granted Dec 31, 2002·47 cites·30 claims
- 2393US6083363AApparatus and method for uniform, low-damage anisotropic plasma processingTOKYO ELECTRON LTD·Filed 1997·Granted Jul 4, 2000·109 cites·21 claims
- 2492US10049921B2Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursorLAM RES CORP·Filed 2014·Granted Aug 14, 2018·15 cites·19 claims
- 2591US11348795B2Metal fill process for three-dimensional vertical NAND wordlineLAM RES CORP·Filed 2018·Granted May 31, 2022·7 cites·20 claims
- 2691US8062977B1Ternary tungsten-containing resistive thin filmsASHTIANI KAIHAN·Filed 2009·Granted Nov 22, 2011·38 cites·12 claims
- 2790US10438847B2Manganese barrier and adhesion layers for cobaltLAM RES CORP·Filed 2017·Granted Oct 8, 2019·6 cites·13 claims
- 2890US9299559B2Flowable oxide film with tunable wet etch rateNOVELLUS SYSTEMS INC·Filed 2014·Granted Mar 29, 2016·10 cites·14 claims
- 2990US6342133B2PVD deposition of titanium and titanium nitride layers in the same chamber without use of a collimator or a shutterNOVELLUS SYSTEMS INC·Filed 2000·Granted Jan 29, 2002·92 cites·12 claims
- 3089US6497796B1Apparatus and method for controlling plasma uniformity across a substrateNOVELLUS SYSTEMS INC·Filed 2000·Granted Dec 24, 2002·34 cites·15 claims
- 3186US6444105B1Physical vapor deposition reactor including magnet to control flow of ionsNOVELLUS SYSTEMS INC·Filed 2000·Granted Sep 3, 2002·22 cites·23 claims
- 3281US9875968B2Interlevel conductor pre-fill utilizing selective barrier depositionLAM RES CORP·Filed 2017·Granted Jan 23, 2018·2 cites·19 claims
- 3377US9406544B1Systems and methods for eliminating seams in atomic layer deposition of silicon dioxide film in gap fill applicationsLAM RES CORP·Filed 2015·Granted Aug 2, 2016·2 cites·16 claims
- 3475US6541371B1Apparatus and method for depositing superior Ta(N)/copper thin films for barrier and seed applications in semiconductor processingNOVELLUS SYSTEMS INC·Filed 2000·Granted Apr 1, 2003·17 cites·36 claims
- 3573US6905959B1Apparatus and method for depositing superior Ta (N) copper thin films for barrier and seed applications in semiconductor processingNOVELLUS SYSTEMS INC·Filed 2002·Granted Jun 14, 2005·14 cites·5 claims
- 3670US10895539B2In-situ chamber clean end point detection systems and methods using computer vision systemsLAM RES CORP·Filed 2018·Granted Jan 19, 2021·1 cites·15 claims
- 3757US9284644B2Apparatus and method for improving wafer uniformityLAM RES CORP·Filed 2014·Granted Mar 15, 2016·1 cites·24 claims
- 3857US2025246434A1Metal silicide contact formationLAM RES CORP·Filed 2023·Application pending·0 cites
- 3955US2025022751A1Gradient liner in metal fillLAM RES CORP·Filed 2022·Application pending·0 cites
- 4053US2014302689A1Methods and apparatus for dielectric depositionNOVELLUS SYSTEMS INC·Filed 2014·Application pending·0 cites
- 4153US2024376598A1Process gas ramp during semiconductor processingLAM RES CORP·Filed 2022·Application pending·0 cites
- 4243US2016013020A1Systems and methods for producing energetic neutralsLAM RES CORP·Filed 2015·Application pending·0 cites
- 4343US2015118863A1Methods and apparatus for forming flowable dielectric films having low porosityLAM RES CORP·Filed 2014·Application pending·0 cites
- 4443US2016314964A1Gap fill using carbon-based filmsLAM RES CORP·Filed 2015·Application pending·0 cites
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