Inventor · disambiguated record
Wen-Doe Su
Also filed as: SU WEN-DOE
13 granted patents·292 citations·filing 1990–2016
92Inventor score
Top patents by PatentIndex Score
13 records- 0187US5223448AMethod for producing a layered capacitor structure for a dynamic random access memory deviceIND TECH RES INST·Filed 1991·Granted Jun 29, 1993·66 cites·14 claims
- 0286US5208472ADouble spacer salicide MOS device and methodIND TECH RES INST·Filed 1992·Granted May 4, 1993·79 cites·1 claims
- 0375US9560753B2Light emitting diode load board and manufacturing process thereofTM TECH INC·Filed 2016·Granted Jan 31, 2017·3 cites·25 claims
- 0467US5156993AFabricating a memory cell with an improved capacitorIND TECH RES INST·Filed 1990·Granted Oct 20, 1992·29 cites·15 claims
- 0563US5132241AMethod of manufacturing minimum counterdoping in twin well processIND TECH RES INST·Filed 1991·Granted Jul 21, 1992·38 cites·20 claims
- 0660US6365455B1Flash memory process using polysilicon spacersMOSEL VITELIC INC·Filed 1998·Granted Apr 2, 2002·21 cites·15 claims
- 0757US5696036ADRAM no capacitor dielectric processMOSEL VITELIC INC·Filed 1996·Granted Dec 9, 1997·23 cites·10 claims
- 0848US5869406AMethod for forming insulating layers between polysilicon layersMOSEL VITELIC INC·Filed 1995·Granted Feb 9, 1999·16 cites·25 claims
- 0941US5747357AModified poly-buffered isolationMOSEL VITELIC INC·Filed 1995·Granted May 5, 1998·7 cites·16 claims
- 1040US5323037ALayered capacitor structure for a dynamic random access memory deviceIND TECH RES INST·Filed 1993·Granted Jun 21, 1994·7 cites·7 claims
- 1129US6204547B1Modified poly-buffered isolationMOSEL VITELIC INC·Filed 1999·Granted Mar 20, 2001·0 cites·34 claims
- 1229US5977608AModified poly-buffered isolationMOSEL VITELIC INC·Filed 1997·Granted Nov 2, 1999·0 cites·19 claims
- 1329US5883015AMethod for using oxygen plasma treatment on a dielectric layerMOSEL VITELIC INC·Filed 1997·Granted Mar 16, 1999·3 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →