Inventor · disambiguated record
Wenguang Shi
Also filed as: SHI WENGUANG · SHI WENGUANG STEPHEN
23 granted patents·5 pending applications·1,071 citations·filing 2015–2025
96Inventor score
Top patents by PatentIndex Score
28 records- 0199US9728551B1Multi-tier replacement memory stack structure integration schemeSANDISK TECHNOLOGIES INC·Filed 2016·Granted Aug 8, 2017·78 cites·36 claims
- 0298US11785776B2Through array contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Oct 10, 2023·6 cites·20 claims
- 0398US10553604B2Through array contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Feb 4, 2020·31 cites·20 claims
- 0498US9853043B2Method of making a multilevel memory stack structure using a cavity containing a sacrificial fill materialSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 26, 2017·49 cites·17 claims
- 0598US9679906B2Three-dimensional memory devices containing memory block bridgesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jun 13, 2017·35 cites·18 claims
- 0698US9543318B1Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistorsSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jan 10, 2017·80 cites·18 claims
- 0798US9530790B1Three-dimensional memory device containing CMOS devices over memory stack structuresSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 27, 2016·159 cites·28 claims
- 0898US9502471B1Multi tier three-dimensional memory devices including vertically shared bit linesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Nov 22, 2016·116 cites·26 claims
- 0998US9449987B1Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistorsSANDISK TECHNOLOGIES INC·Filed 2016·Granted Sep 20, 2016·454 cites·28 claims
- 1097US11758732B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Sep 12, 2023·3 cites·20 claims
- 1197US11527547B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Dec 13, 2022·3 cites·20 claims
- 1297US10923491B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Feb 16, 2021·4 cites·20 claims
- 1397US10593690B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Mar 17, 2020·21 cites·20 claims
- 1495US10930663B2Interconnect structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Feb 23, 2021·14 cites·12 claims
- 1593US11956953B2Joint opening structures of three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Apr 9, 2024·1 cites·20 claims
- 1692US10910397B2Through array contact structure of three- dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Feb 2, 2021·5 cites·20 claims
- 1790US9716101B2Forming 3D memory cells after word line replacementSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jul 25, 2017·8 cites·11 claims
- 1888US2025024683A1Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1987US2025311214A1Semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 2087US2024407172A1Through array contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 2186US11545505B2Through array contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jan 3, 2023·1 cites·20 claims
- 2284US12185550B2Through array contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 2384US12137568B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Nov 5, 2024·0 cites·20 claims
- 2483US2024188291A1Semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 2582US12137567B2Interconnect structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Nov 5, 2024·1 cites·20 claims
- 2682US10886291B2Joint opening structures of three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jan 5, 2021·2 cites·20 claims
- 2779US2025017019A1Interconnect structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 2873US11482532B2Joint opening structures of three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Oct 25, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →