Inventor · disambiguated record
Greg D. U'Ren
Also filed as: U REN GREG D
18 granted patents·186 citations·filing 2002–2009
94Inventor score
Technology areasH10D
Top patents by PatentIndex Score
18 records- 0193US6586297B1Method for integrating a metastable base into a high-performance HBT and related structureNEWPORT FAB LLC·Filed 2002·Granted Jul 1, 2003·71 cites·13 claims
- 0287US7462923B1Bipolar transistor formed using selective and non-selective epitaxy for base integration in a BiCMOS processNEWPORT FAB LLC·Filed 2007·Granted Dec 9, 2008·12 cites·12 claims
- 0385US7335547B1Method for effective BiCMOS process integrationNEWPORT FAB LLC·Filed 2005·Granted Feb 26, 2008·13 cites·20 claims
- 0481US7291898B1Selective and non-selective epitaxy for base integration in a BiCMOS process and related structureNEWPORT FAB LLC·Filed 2005·Granted Nov 6, 2007·7 cites·14 claims
- 0574US7795703B1Selective and non-selective epitaxy for base intergration in a BiCMOS processNEWPORT FAB LLC·Filed 2008·Granted Sep 14, 2010·4 cites·20 claims
- 0674US6680235B1Method for fabricating a selective eptaxial HBT emitterNEWPORT FAB LLC·Filed 2002·Granted Jan 20, 2004·16 cites·11 claims
- 0772US7297992B1Method and structure for integration of phosphorous emitter in an NPN device in a BiCMOS processNEWPORT FAB LLC·Filed 2004·Granted Nov 20, 2007·13 cites·6 claims
- 0871US6781214B1Metastable base in a high-performance HBTNEWPORT FAB LLC·Filed 2002·Granted Aug 24, 2004·14 cites·10 claims
- 0965US7498620B1Integration of phosphorus emitter in an NPN device in a BiCMOS processNEWPORT FAB LLC·Filed 2006·Granted Mar 3, 2009·2 cites·17 claims
- 1065US6830982B1Method for reducing extrinsic base resistance and improving manufacturability in an NPN transistorNEWPORT FAB LLC·Filed 2002·Granted Dec 14, 2004·10 cites·8 claims
- 1160US6617619B1Structure for a selective epitaxial HBT emitterNEWPORT FAB LLC·Filed 2002·Granted Sep 9, 2003·7 cites·10 claims
- 1255US6673688B1Method for eliminating collector-base band gap in an HBTNEWPORT FAB LLC·Filed 2002·Granted Jan 6, 2004·5 cites·13 claims
- 1352US7235861B1NPN transistor having reduced extrinsic base resistance and improved manufacturabilityNEWPORT FAB LLC·Filed 2004·Granted Jun 26, 2007·4 cites·7 claims
- 1452US6639256B2Structure for eliminating collector-base band gap discontinuity in an HBTNEWPORT FAB LLC·Filed 2002·Granted Oct 28, 2003·4 cites·12 claims
- 1549US6893931B1Reducing extrinsic base resistance in an NPN transistorNEWPORT FAB LLC·Filed 2002·Granted May 17, 2005·3 cites·23 claims
- 1647US8987785B2Integration of an NPN device with phosphorus emitter and controlled emitter-base junction depth in a BiCMOS processU REN GREG D·Filed 2009·Granted Mar 24, 2015·0 cites·18 claims
- 1743US6759674B2Band gap compensated HBTNEWPORT FAB LLC·Filed 2002·Granted Jul 6, 2004·1 cites·19 claims
- 1840US7064361B1NPN transistor having reduced extrinsic base resistance and improved manufacturabilityNEWPORT FAB LLC·Filed 2004·Granted Jun 20, 2006·0 cites·11 claims
Join the waitlist — get patent alerts
Get an alert when Greg D. U'Ren files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →