Inventor · disambiguated record
Hiroyasu Hagino
Also filed as: HAGINO HIROYASU
16 granted patents·296 citations·filing 1974–1994
94Inventor score
Files withMITSUBISHI ELECTRIC CORP16
Top patents by PatentIndex Score
16 records- 0180US5304821AMOS-gate-turnoff thyristorMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Apr 19, 1994·44 cites·10 claims
- 0273US5023691AInsulated gate bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Jun 11, 1991·23 cites·14 claims
- 0369US4990975AInsulated gate bipolar transistor and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Feb 5, 1991·22 cites·7 claims
- 0467US5171696ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Dec 15, 1992·40 cites·5 claims
- 0564US5380670AMethod of fabricating a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jan 10, 1995·21 cites·11 claims
- 0664US5084401AInsulated gate bipolar transistor and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jan 28, 1992·22 cites·2 claims
- 0763US5086324AInsulated gate bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Feb 4, 1992·29 cites·10 claims
- 0860US4001873ASemiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1974·Granted Jan 4, 1977·11 cites·5 claims
- 0958US5170239AInsulated gate bipolar transistor having high short-circuit SOA and high latch-up currentMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Dec 8, 1992·15 cites·8 claims
- 1056US5321281AInsulated gate semiconductor device and method of fabricating sameMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jun 14, 1994·15 cites·10 claims
- 1155US5451531AMethod of fabricating an insulated gate semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Sep 19, 1995·14 cites·31 claims
- 1254US3933541AProcess of producing semiconductor planar deviceMITSUBISHI ELECTRIC CORP·Filed 1975·Granted Jan 20, 1976·14 cites·8 claims
- 1353US5391898AInsulated gate bipolar transistor having high short-circuit and latch-up withstandabilityMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Feb 21, 1995·12 cites·6 claims
- 1447US4662957AMethod of producing a gate turn-off thyristorMITSUBISHI ELECTRIC CORP·Filed 1985·Granted May 5, 1987·11 cites·4 claims
- 1532US4556898ASemiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1983·Granted Dec 3, 1985·3 cites·14 claims
- 1630US5489788AInsulated gate semiconductor device with improved short-circuit toleranceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Feb 6, 1996·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →