Inventor · disambiguated record
Brian K. Kirkpatrick
Also filed as: KIRKPATRICK BRIAN · KIRKPATRICK BRIAN K · KIRKPATRICK BRIAN KEITH
52 granted patents·17 pending applications·185 citations·filing 1998–2025
97Inventor score
Files withTEXAS INSTRUMENTS INC50APPLIED MATERIALS INC9KIRKPATRICK BRIAN K4BARNA GABRIEL GEORGE1CHAMBERS JAMES JOSEPH1
Top patents by PatentIndex Score
69 records- 0192US9070785B1High-k / metal gate CMOS transistors with TiN gatesTEXAS INSTRUMENTS INC·Filed 2014·Granted Jun 30, 2015·10 cites·19 claims
- 0292US7838356B2Gate dielectric first replacement gate processes and integrated circuits therefromTEXAS INSTRUMENTS INC·Filed 2008·Granted Nov 23, 2010·21 cites·24 claims
- 0389US8372703B2Gate dielectric first replacement gate processes and integrated circuits therefromTEXAS INSTRUMENTS INC·Filed 2010·Granted Feb 12, 2013·10 cites·11 claims
- 0489US6720247B2Pre-pattern surface modification for low-k dielectrics using A H2 plasmaTEXAS INSTRUMENTS INC·Filed 2001·Granted Apr 13, 2004·48 cites·11 claims
- 0583US8058161B2Recessed STI for wide transistorsBARNA GABRIEL GEORGE·Filed 2006·Granted Nov 15, 2011·16 cites·20 claims
- 0680US7732284B1Post high-k dielectric/metal gate cleanTEXAS INSTRUMENTS INC·Filed 2008·Granted Jun 8, 2010·7 cites·17 claims
- 0779US9721847B2High-k / metal gate CMOS transistors with TiN gatesTEXAS INSTRUMENTS INC·Filed 2015·Granted Aug 1, 2017·2 cites·19 claims
- 0877US9490143B1Method of fabricating semiconductorsTEXAS INSTRUMENTS INC·Filed 2015·Granted Nov 8, 2016·2 cites·20 claims
- 0977US8043921B2Nitride removal while protecting semiconductor surfaces for forming shallow junctionsTEXAS INSTRUMENTS INC·Filed 2010·Granted Oct 25, 2011·4 cites·19 claims
- 1075US7384869B2Protection of silicon from phosphoric acid using thick chemical oxideTEXAS INSTRUMENTS INC·Filed 2005·Granted Jun 10, 2008·5 cites·17 claims
- 1172US12051599B2Cleaning method with in-line SPM processingAPPLIED MATERIALS INC·Filed 2023·Granted Jul 30, 2024·0 cites·18 claims
- 1271US7943456B2Selective wet etch process for CMOS ICs having embedded strain inducing regions and integrated circuits therefromTEXAS INSTRUMENTS INC·Filed 2008·Granted May 17, 2011·4 cites·19 claims
- 1370US2024194519A1Reduced semiconductor wafer bow and warpageTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 1467US11942359B2Reduced semiconductor wafer bow and warpageTEXAS INSTRUMENTS INC·Filed 2021·Granted Mar 26, 2024·0 cites·17 claims
- 1567US8618661B2Die having coefficient of thermal expansion graded layerKIRKPATRICK BRIAN K·Filed 2011·Granted Dec 31, 2013·2 cites·23 claims
- 1667US7339240B2Dual-gate integrated circuit semiconductor deviceTEXAS INSTRUMENTS INC·Filed 2006·Granted Mar 4, 2008·2 cites·4 claims
- 1766US8450221B2Method of forming MOS transistors including SiON gate dielectric with enhanced nitrogen concentration at its sidewallsKIRKPATRICK BRIAN K·Filed 2010·Granted May 28, 2013·2 cites·11 claims
- 1866US7927993B2Cross-contamination control for semiconductor process flows having metal comprising gate electrodesTEXAS INSTRUMENTS INC·Filed 2008·Granted Apr 19, 2011·2 cites·22 claims
- 1963US11682567B2Cleaning system with in-line SPM processingAPPLIED MATERIALS INC·Filed 2021·Granted Jun 20, 2023·0 cites·12 claims
- 2062US12480215B2Integratead wet clean for bevel treatmentsAPPLIED MATERIALS INC·Filed 2022·Granted Nov 25, 2025·0 cites·11 claims
- 2160US12027382B2Surface cleaning with directed high pressure chemistryAPPLIED MATERIALS INC·Filed 2021·Granted Jul 2, 2024·0 cites·20 claims
- 2260US8441078B2Semiconductor device including SiON gate dielectric with portions having different nitrogen concentrationsCHAMBERS JAMES JOSEPH·Filed 2010·Granted May 14, 2013·1 cites·2 claims
- 2360US7504339B2Method to form shallow trench isolation with rounded upper corner for advanced semiconductor circuitsTEXAS INSTRUMENTS INC·Filed 2005·Granted Mar 17, 2009·1 cites·17 claims
- 2460US7049242B2Post high voltage gate dielectric pattern plasma surface treatmentTEXAS INSTRUMENTS INC·Filed 2004·Granted May 23, 2006·6 cites·21 claims
- 2560US7018925B2Post high voltage gate oxide pattern high-vacuum outgas surface treatmentTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 28, 2006·6 cites·11 claims
- 2659US2025372369A1Methods of fabricating high-k gate structuresAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 2759US2024226967A1System and process for post-chemical mechanical polishing cleaningAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2858US10483261B2Integrated circuit having chemically modified spacer surfaceTEXAS INSTRUMENTS INC·Filed 2017·Granted Nov 19, 2019·0 cites·15 claims
- 2958US2024038553A1Processing methods and cluster tools for forming semiconductor devicesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3057US2025218837A1System and process for post-chemical mechanical polishing cleaningAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3156US9768078B2Inner L-spacer for replacement gate flowTEXAS INSTRUMENTS INC·Filed 2016·Granted Sep 19, 2017·0 cites·16 claims
- 3256US9620423B2Integrated circuit having chemically modified spacer surfaceTEXAS INSTRUMENTS INC·Filed 2015·Granted Apr 11, 2017·0 cites·15 claims
- 3356US9087917B2Inner L-spacer for replacement gate flowTEXAS INSTRUMENTS INC·Filed 2013·Granted Jul 21, 2015·0 cites·7 claims
- 3456US8216945B2Wafer planarity control between pattern levelsPRINS STEVEN L·Filed 2010·Granted Jul 10, 2012·1 cites·18 claims
- 3556US6921721B2Post plasma clean process for a hardmaskTEXAS INSTRUMENTS INC·Filed 2003·Granted Jul 26, 2005·7 cites·10 claims
- 3656US6831008B2Nickel silicide—silicon nitride adhesion through surface passivationTEXAS INSTRUMENTS INC·Filed 2002·Granted Dec 14, 2004·5 cites·15 claims
- 3756US2024412985A1Dedicated sulfuric-peroxide process module for post-cmp cleaning platformsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3855US9362375B2Inner L-spacer for replacement gate flowTEXAS INSTRUMENTS INC·Filed 2015·Granted Jun 7, 2016·0 cites·6 claims
- 3955US6797644B2Method to reduce charge interface traps and channel hot carrier degradationTEXAS INSTRUMENTS INC·Filed 2001·Granted Sep 28, 2004·9 cites·5 claims
- 4054US9178037B2Inner L-spacer for replacement gate flowTEXAS INSTRUMENTS INC·Filed 2015·Granted Nov 3, 2015·0 cites·7 claims
- 4153US9496359B2Integrated circuit having chemically modified spacer surfaceKIRKPATRICK BRIAN K·Filed 2012·Granted Nov 15, 2016·0 cites·10 claims
- 4252US9881795B2Method of fabricating semiconductorsTEXAS INSTRUMENTS INC·Filed 2016·Granted Jan 30, 2018·0 cites·15 claims
- 4352US8748992B2MOS transistors including SiON gate dielectric with enhanced nitrogen concentration at its sidewallsTEXAS INSTRUMENTS INC·Filed 2013·Granted Jun 10, 2014·0 cites·6 claims
- 4452US8748996B2Semiconductor device including SiON gate dielectric with portions having different nitrogen concentrationsTEXAS INSTRUMENTS INC·Filed 2013·Granted Jun 10, 2014·0 cites·9 claims
- 4550US7968443B2Cross-contamination control for processing of circuits comprising MOS devices that include metal comprising high-K dielectricsTEXAS INSTRUMENTS INC·Filed 2008·Granted Jun 28, 2011·0 cites·17 claims
- 4650US7402524B2Post high voltage gate oxide pattern high-vacuum outgas surface treatmentTEXAS INSTRUMENTS INC·Filed 2005·Granted Jul 22, 2008·0 cites·11 claims
- 4750US2014080301A1Fabricating a semiconductor die having coefficient of thermal expansion graded layerTEXAS INSTRUMENTS INC·Filed 2013·Application pending·0 cites
- 4848US11205575B2Method for stripping one or more layers from a semiconductor waferTEXAS INSTRUMENTS INC·Filed 2019·Granted Dec 21, 2021·0 cites·17 claims
- 4948US2007050077A1Chemical Mechanical Polishing Method and ApparatusTEXAS INSTRUMENTS INC·Filed 2006·Application pending·0 cites
- 5046US11239346B2Split gate memory cell fabrication and systemTEXAS INSTRUMENTS INC·Filed 2019·Granted Feb 1, 2022·0 cites·20 claims
Showing the top 50 of 69 patent records by PatentIndex Score.
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