Inventor · disambiguated record
Gi-Tae Jeong
Also filed as: JEONG GI-TAE
14 granted patents·3 pending applications·137 citations·filing 1998–2014
92Inventor score
Files withSAMSUNG ELECTRONICS CO LTD13CHANG-WOOK JEONG1HWANG YOUNG-NAM1JEONG HONG-SIK1PARK JAE-HYUN1
Top patents by PatentIndex Score
17 records- 0194US7830705B2Multi-level phase change memory device and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 9, 2010·39 cites·27 claims
- 0290US7164598B2Methods of operating magnetic random access memory device using spin injection and related devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 16, 2007·25 cites·42 claims
- 0380US8199567B2Multiple level cell phase-change memory devices having pre-reading operation resistance drift recovery, memory systems employing such devices and methods of reading memory devicesCHANG-WOOK JEONG·Filed 2011·Granted Jun 12, 2012·9 cites·9 claims
- 0476US7940552B2Multiple level cell phase-change memory device having pre-reading operation resistance drift recovery, memory systems employing such devices and methods of reading memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 10, 2011·9 cites·11 claims
- 0576US7804703B2Phase change memory device having Schottky diode and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 28, 2010·7 cites·18 claims
- 0669US7843741B2Memory devices with selective pre-write verification and methods of operation thereofSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 30, 2010·6 cites·20 claims
- 0765US7569401B2Magnetic random access memory cells having split subdigit lines having cladding layers thereon and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 4, 2009·2 cites·14 claims
- 0862US6917551B2Memory devices, sense amplifiers, and methods of operation thereof using voltage-dependent capacitor pre-amplificationSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 12, 2005·12 cites·12 claims
- 0961US8320170B2Multi-bit phase change memory devicesHWANG YOUNG-NAM·Filed 2010·Granted Nov 27, 2012·3 cites·16 claims
- 1060US8050083B2Phase change memory device and write method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 1, 2011·4 cites·16 claims
- 1150US8043924B2Methods of forming phase-change memory units, and methods of manufacturing phase-change memory devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 25, 2011·0 cites·6 claims
- 1249US6066556AMethods of fabricating conductive lines in integrated circuits using insulating sidewall spacers and conductive lines so fabricatedSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted May 23, 2000·16 cites·6 claims
- 1349US2010072453A1Phase-Changeable Fuse Elements and Memory Devices Containing Phase-Changeable Fuse Elements and Memory Cells ThereinJEONG HONG-SIK·Filed 2009·Application pending·0 cites
- 1447US9385809B2Optical interface module for coherent reception, optical memory module, and optical memory system comprising sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jul 5, 2016·0 cites·18 claims
- 1547US2005205952A1Magnetic random access memory cells having split sub-digit lines having cladding layers thereon and methods of fabricating the samePARK JAE-HYUN·Filed 2005·Application pending·0 cites
- 1646US6903989B2Data sensing circuits and methods for magnetic memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 7, 2005·5 cites·22 claims
- 1737US2009230378A1Resistive memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →