Inventor · disambiguated record
Jong-Ho Yang
Also filed as: YANG JONG-HO
19 granted patents·19 pending applications·587 citations·filing 2003–2015
95Inventor score
Files withSAMSUNG ELECTRONICS CO LTD30GANGNEUNG WONJU NAT UNIVERSITY INDUSTRY ACADEMY COOPERATION GROUP1INFINEON TECHNOLOGIES AG1LEE JAE GON1LEE JOO-WON1
Top patents by PatentIndex Score
38 records- 0197US9124858B2Content processing apparatus for processing high resolution content and content processing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 1, 2015·28 cites·20 claims
- 0297US7651729B2Method of fabricating metal silicate layer using atomic layer deposition techniqueSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 26, 2010·61 cites·41 claims
- 0397US7084076B2Method for forming silicon dioxide film using siloxaneSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 1, 2006·203 cites·55 claims
- 0493US7838372B2Methods of manufacturing semiconductor devices and structures thereofINFINEON TECHNOLOGIES AG·Filed 2008·Granted Nov 23, 2010·25 cites·22 claims
- 0593US6992019B2Methods for forming silicon dioxide layers on substrates using atomic layer depositionSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jan 31, 2006·68 cites·36 claims
- 0693US6933245B2Method of forming a thin film with a low hydrogen content on a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 23, 2005·74 cites·15 claims
- 0792US6858533B2Semiconductor device having an etch stopper formed of a sin layer by low temperature ALD and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 22, 2005·84 cites·10 claims
- 0885US7396777B2Method of fabricating high-k dielectric layer having reduced impuritySAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 8, 2008·10 cites·32 claims
- 0982US8338245B2Integrated circuit system employing stress-engineered spacersLEE JAE GON·Filed 2008·Granted Dec 25, 2012·10 cites·10 claims
- 1081US7935593B2Stress optimization in dual embedded epitaxially grown semiconductor processingSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 3, 2011·7 cites·27 claims
- 1180US8198194B2Methods of forming p-channel field effect transistors having SiGe source/drain regionsYANG JONG HO·Filed 2010·Granted Jun 12, 2012·8 cites·11 claims
- 1256US6989231B2Method of forming fine patterns using silicon oxide layerSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jan 24, 2006·5 cites·17 claims
- 1354US9147424B2Apparatus and method for reproducing an optical recording, and computer-readable recording mediumSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 29, 2015·0 cites·14 claims
- 1452US9454995B2Information storage medium storing content, content providing method, content reproducing method and apparatus thereforSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 27, 2016·0 cites·44 claims
- 1551US7180190B2Electrode line structure having fine line width and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 20, 2007·4 cites·8 claims
- 1651US2005058307A1Method and apparatus for constructing audio stream for mixing, and information storage mediumSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 1750US2015172619A1Storage medium, reproducing apparatus and method for recording and playing image dataSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 1849US7510969B2Electrode line structure having fine line width and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 31, 2009·0 cites·8 claims
- 1947US2010197124A1Methods of Forming Semiconductor Devices Using Plasma Dehydrogenation and Devices Formed TherebySAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 2046US2013332970A1Method and apparatus for reproducing streaming playlist and information storage medium storing streaming playlistSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 2146US2014099065A1Apparatus for reproducing recording medium and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 2246US2015340061A1Method and device for reproducing content using screen composition informationSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 2345US7790622B2Methods for removing gate sidewall spacers in CMOS semiconductor fabrication processesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 7, 2010·0 cites·36 claims
- 2445US2015052589A1Apparatus for processing image, method for providing personalization service, and computer-readable mediumSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 2545US2014086559A1Blu-ray disc playback apparatus and blu-ray disc loading method for the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 2644US2013308926A1Recording medium, reproducing device for performing trick play for data of the recording medium, and method thereofGANGNEUNG WONJU NAT UNIVERSITY INDUSTRY ACADEMY COOPERATION GROUP·Filed 2013·Application pending·0 cites
- 2744US2008124874A1Methods of Forming Field Effect Transistors Having Silicon-Germanium Source and Drain RegionsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2844US2005146037A1Semiconductor device having an etch stopper formed of a SiN layer by low temperature ALD and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 2944US2014064699A1Apparatus and method for recording and reproducing a progressive playlist and information storage medium thereforSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 3044US2014037267A1Methods and apparatuses for reproducing and recording discless application and information storage medium for recording the discless applicationSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 3143US2005142781A1Semiconductor device having an etch stopper formed of a SiN layer by low temperature ALD and method of fabricating the sameFiled 2004·Application pending·0 cites
- 3242US2008124859A1Methods of Forming CMOS Integrated Circuits Using Gate Sidewall Spacer Reduction TechniquesSUN MIN CHUL·Filed 2006·Application pending·0 cites
- 3341US2006040510A1Semiconductor device with silicon dioxide layers formed using atomic layer depositionLEE JOO-WON·Filed 2005·Application pending·0 cites
- 3440US2006157750A1Semiconductor device having etch-resistant L-shaped spacer and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3538US2004107897A1Atomic layer deposition apparatus and method for preventing generation of solids in exhaust pathFiled 2003·Application pending·0 cites
- 3637US9741396B2Converting apparatus, contents converting method, and computer readable recording mediumSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 22, 2017·0 cites·21 claims
- 3736US8030196B2Transistor formation using capping layerSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Oct 4, 2011·0 cites·19 claims
- 3835US2004180483A1Method of manufacturing CMOS transistor with LDD structureSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
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