Inventor · disambiguated record
Kang-Soo Chu
Also filed as: CHU KANG-SOO
11 granted patents·5 pending applications·404 citations·filing 2003–2007
91Inventor score
Top patents by PatentIndex Score
16 records- 0197US7084076B2Method for forming silicon dioxide film using siloxaneSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 1, 2006·203 cites·55 claims
- 0293US6992019B2Methods for forming silicon dioxide layers on substrates using atomic layer depositionSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jan 31, 2006·68 cites·36 claims
- 0392US6858533B2Semiconductor device having an etch stopper formed of a sin layer by low temperature ALD and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 22, 2005·84 cites·10 claims
- 0490US7394641B2MEMS tunable capacitor with a wide tuning rangeSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 1, 2008·15 cites·23 claims
- 0584US7042698B2MEMS tunable capacitor with a wide tuning range and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 9, 2006·10 cites·13 claims
- 0683US7846790B2Method of fabricating semiconductor device having multiple gate dielectric layers and semiconductor device fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 7, 2010·10 cites·16 claims
- 0773US7203052B2Method of fabricating MEMS tunable capacitor with wide tuning rangeSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 10, 2007·5 cites·20 claims
- 0856US6989231B2Method of forming fine patterns using silicon oxide layerSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jan 24, 2006·5 cites·17 claims
- 0951US7180190B2Electrode line structure having fine line width and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 20, 2007·4 cites·8 claims
- 1049US7510969B2Electrode line structure having fine line width and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 31, 2009·0 cites·8 claims
- 1145US7726777B2Inkjet print head and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 1, 2010·0 cites·36 claims
- 1244US2005146037A1Semiconductor device having an etch stopper formed of a SiN layer by low temperature ALD and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 1343US2005142781A1Semiconductor device having an etch stopper formed of a SiN layer by low temperature ALD and method of fabricating the sameFiled 2004·Application pending·0 cites
- 1441US2006040510A1Semiconductor device with silicon dioxide layers formed using atomic layer depositionLEE JOO-WON·Filed 2005·Application pending·0 cites
- 1538US2004107897A1Atomic layer deposition apparatus and method for preventing generation of solids in exhaust pathFiled 2003·Application pending·0 cites
- 1635US2004180483A1Method of manufacturing CMOS transistor with LDD structureSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
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