Inventor · disambiguated record
Yu-Ku Lin
Also filed as: LIN YU-KU
34 granted patents·11 pending applications·254 citations·filing 1999–2022
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG31TAIWAN SEMICONDUCTOR MFG CO LTD10CHANG SHIH-CHIEH1CHEN KEI-WEI1HSU SHAO-TA1
Top patents by PatentIndex Score
45 records- 0196US10367021B2Image sensor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 30, 2019·12 cites·20 claims
- 0288US11522001B2Image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·1 cites·20 claims
- 0384US6099662AProcess for cleaning a semiconductor substrate after chemical-mechanical polishingTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Aug 8, 2000·77 cites·42 claims
- 0483US10074594B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 11, 2018·4 cites·20 claims
- 0582US12272708B2Image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·20 claims
- 0682US8815630B1Back side illumination (BSI) sensors, manufacturing methods thereof, and semiconductor device manufacturing methodsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 26, 2014·5 cites·20 claims
- 0779US8435893B1Semiconductor device and method of formationNIAN JUN-NAN·Filed 2011·Granted May 7, 2013·6 cites·13 claims
- 0877US7368379B2Multi-layer interconnect structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 6, 2008·5 cites·20 claims
- 0975US10818716B2Image sensor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 27, 2020·0 cites·20 claims
- 1068US7071100B2Method of forming barrier layer with reduced resistivity and improved reliability in copper damascene processCHEN KEI-WEI·Filed 2004·Granted Jul 4, 2006·20 cites·22 claims
- 1168US6531382B1Use of a capping layer to reduce particle evolution during sputter pre-clean proceduresTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Mar 11, 2003·16 cites·22 claims
- 1267US7955993B2Oxygen plasma reduction to eliminate precursor overflow in BPTEOS film depositionTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jun 7, 2011·2 cites·18 claims
- 1366US7417321B2Via structure and process for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Aug 26, 2008·4 cites·16 claims
- 1464US6551927B1CoSix process to improve junction leakageTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 22, 2003·13 cites·24 claims
- 1562US8642439B2Semiconductor device and method of formationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 4, 2014·1 cites·20 claims
- 1661US2015279880A1Backside illuminated image sensor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Application pending·0 cites
- 1759US9419155B2Sensing product and method of makingCHANG SHIH-CHIEH·Filed 2012·Granted Aug 16, 2016·0 cites·11 claims
- 1859US6626741B2Method for improving thickness uniformity on a semiconductor wafer during chemical mechanical polishingTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Sep 30, 2003·7 cites·15 claims
- 1958US6372645B1Methods to reduce metal bridges and line shorts in integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Apr 16, 2002·22 cites·22 claims
- 2057US6769959B2Method and system for slurry usage reduction in chemical mechanical polishingTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Aug 3, 2004·7 cites·20 claims
- 2155US6514673B2Rule to determine CMP polish timeTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Feb 4, 2003·4 cites·9 claims
- 2254US10867889B2Method of manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
- 2354US6695921B2Hoop support for semiconductor waferTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Feb 24, 2004·5 cites·13 claims
- 2453US7128821B2Electropolishing method for removing particles from wafer surfaceTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Oct 31, 2006·4 cites·19 claims
- 2552US9991204B2Through via structure for step coverage improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 5, 2018·0 cites·20 claims
- 2652US6863491B2Catch-pin water support for process chamberTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 8, 2005·4 cites·19 claims
- 2751US6352924B1Rework method for wafers that trigger WCVD backside alarmTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Mar 5, 2002·5 cites·6 claims
- 2850US7304728B2Test device and method for laser alignment calibrationTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Dec 4, 2007·3 cites·13 claims
- 2949US6682605B2Apparatus and method for removing coating layers from alignment marksTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jan 27, 2004·4 cites·6 claims
- 3049US6248002B1Obtaining the better defect performance of the fuse CMP process by adding slurry polish on more soft pad after slurry polishTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 19, 2001·13 cites·33 claims
- 3147US9711454B2Through via structure for step coverage improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 18, 2017·0 cites·15 claims
- 3247US2007126120A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 3345US2010230815A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2010·Application pending·0 cites
- 3444US7312149B2Copper plating of semiconductor devices using single intermediate low power immersion stepTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Dec 25, 2007·1 cites·21 claims
- 3543US6232043B1Rule to determine CMP polish timeTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 15, 2001·9 cites·11 claims
- 3643US2007205516A1Low-k dielectric layer, semiconductor device, and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 3742US2007084730A1Plating apparatuses and processesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 3842US2007252277A1Semiconductor devices and fabrication method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 3942US2008061343A1Metal-oxide-metal structure with improved capacitive coupling areaTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 4039US9859124B2Method of manufacturing semiconductor device with recessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 2, 2018·0 cites·20 claims
- 4138US2004147116A1Novel method to reduce stress for copper CMPTAIWAN SEMICONDUCTOR MFG·Filed 2003·Application pending·0 cites
- 4238US2002194790A1Method for fabricating diamond conditioning disc and disc fabricatedTAIWAN SEMICONDUCTOR MFG·Filed 2001·Application pending·0 cites
- 4337US2005253268A1Method and structure for improving adhesion between intermetal dielectric layer and cap layerHSU SHAO-TA·Filed 2004·Application pending·0 cites
- 4436US9601535B2Semiconducator image sensor having color filters formed over a high-K dielectric gridTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 21, 2017·0 cites·20 claims
- 4536US2005236181A1Novel ECP method for preventing the formation of voids and contamination in viasTAIWAN SEMICONDUCTOR MFG·Filed 2004·Application pending·0 cites
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