Inventor · disambiguated record
John O. Borland
Also filed as: BORLAND JOHN · BORLAND JOHN O
8 granted patents·4 pending applications·457 citations·filing 1990–2022
90Inventor score
Top patents by PatentIndex Score
12 records- 0197US7259036B2Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film productsTEL EPION INC·Filed 2005·Granted Aug 21, 2007·131 cites·40 claims
- 0294US7410890B2Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiationTEL EPION INC·Filed 2005·Granted Aug 12, 2008·28 cites·52 claims
- 0389US5501993AMethod of constructing CMOS vertically modulated wells (VMW) by clustered MeV BILLI (buried implanted layer for lateral isolation) implantationGENUS INC·Filed 1994·Granted Mar 26, 1996·102 cites·21 claims
- 0486US7396745B2Formation of ultra-shallow junctions by gas-cluster ion irradiationTEL EPION INC·Filed 2005·Granted Jul 8, 2008·12 cites·35 claims
- 0584US6187643B1Simplified semiconductor device manufacturing using low energy high tilt angle and high energy post-gate ion implantation (PoGI)VARIAN SEMICONDUCTOR EQUIPMENT·Filed 1999·Granted Feb 13, 2001·81 cites·16 claims
- 0679US4975385AMethod of constructing lightly doped drain (LDD) integrated circuit structureAPPLIED MATERIALS INC·Filed 1990·Granted Dec 4, 1990·48 cites·19 claims
- 0775US5814866ASemiconductor device having at least one field oxide area and CMOS vertically modulated wells (VMW) with a buried implanted layer for lateral isolation having a first portion below a well, a second portion forming another, adjacent well, and a vertical poGENUS INC·Filed 1996·Granted Sep 29, 1998·45 cites·15 claims
- 0853US2008245974A1Method of introducing material into a substrate by gas-cluster ion beam irradiationTEL EPION INC·Filed 2008·Application pending·0 cites
- 0952US2024241158A1Self-produced energy surplus/shortage information generation device, self-produced energy surplus/shortage information generation method, photovoltaic system, microgrid energy supply and demand system, and microgrid energy supply and demand methodTANAKA TAKAHIRO·Filed 2022·Application pending·0 cites
- 1044US5821589AMethod for cmos latch-up improvement by mev billi (buried implanted layer for laternal isolation) plus buried layer implantationGENUS INC·Filed 1997·Granted Oct 13, 1998·10 cites·1 claims
- 1142US2006292762A1Replacement gate field effect transistor with germanium or SiGe channel and manufacturing method for same using gas-cluster ion irradiationEPION CORP·Filed 2006·Application pending·0 cites
- 1235US2003096490A1Method of forming ultra shallow junctionsFiled 2002·Application pending·0 cites
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