Inventor · disambiguated record
Xin-Yong Wang
Also filed as: WANG XIN · Wang xin-yong
20 granted patents·6 pending applications·21 citations·filing 2008–2025
90Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD17GLOBALFOUNDRIES INC4BERGGREN MAGNUS1HUAWEI DIGITAL POWER TECH CO LTD1IBM1
Top patents by PatentIndex Score
26 records- 0198US11469221B2Integrated circuit and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 11, 2022·7 cites·20 claims
- 0289US11239255B1Integrated circuit with active region jogsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·2 cites·20 claims
- 0385US12283590B2Integrated circuit and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 22, 2025·0 cites·20 claims
- 0482US11469170B2Multilevel interconnection structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 11, 2022·1 cites·20 claims
- 0581US2025221049A1Integrated circuit and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0677US11929361B2Integrated circuit and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 12, 2024·0 cites·20 claims
- 0774US8243356B2Security document circuitROBERTSSON MATS·Filed 2008·Granted Aug 14, 2012·8 cites·24 claims
- 0873US2023387129A1Integrated circuit with active region jogsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0972US11769772B2Integrated circuit with active region jogsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 26, 2023·0 cites·20 claims
- 1071US9607989B2Forming self-aligned NiSi placement with improved performance and yieldGLOBALFOUNDRIES INC·Filed 2014·Granted Mar 28, 2017·2 cites·18 claims
- 1170US12100652B2Multilevel interconnection structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 24, 2024·0 cites·20 claims
- 1262US12477831B2Semiconductor device having interleaved clock gate blocks and decoupling capacitor blocks and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 18, 2025·0 cites·20 claims
- 1359US2024421235A1Semiconductor device and semiconductor device manufacturing methodHUAWEI DIGITAL POWER TECH CO LTD·Filed 2024·Application pending·0 cites
- 1457US9123783B2Integrated circuits and methods of forming integrated circuits with interlayer dielectric protectionGLOBALFOUNDRIES INC·Filed 2012·Granted Sep 1, 2015·1 cites·16 claims
- 1557US2024055500A1Method of using semiconductor device and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1655US12426379B2Semiconductor device having interleaved clock gate blocks and decoupling capacitor blocks and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 23, 2025·0 cites·20 claims
- 1755US11417601B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·0 cites·20 claims
- 1853US11456292B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·0 cites·20 claims
- 1951US11404553B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·0 cites·20 claims
- 2050US11799008B2Semiconductor device and method of usingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·0 cites·20 claims
- 2150US11424237B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·0 cites·20 claims
- 2250US9349749B2Semiconductor device including SIU butted junction to reduce short-channel penaltyGLOBALFOUNDRIES INC·Filed 2015·Granted May 24, 2016·0 cites·9 claims
- 2350US9165944B2Semiconductor device including SOI butted junction to reduce short-channel penaltyIBM·Filed 2013·Granted Oct 20, 2015·0 cites·7 claims
- 2450US2023124602A1Semiconductor device structure and manufacturing method thereforYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 2538US2018108654A1Finfet device with low resistance finsGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
- 2634US9508840B2Diode, use thereof, and a method for producing the sameBERGGREN MAGNUS·Filed 2011·Granted Nov 29, 2016·0 cites·22 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →