Inventor · disambiguated record
Niraj Ranjan
Also filed as: RANJAN NIRAJ
24 granted patents·5 pending applications·288 citations·filing 1995–2025
95Inventor score
Files withINT RECTIFIER CORP14INFINEON TECHNOLOGIES AMERICAS CORP9INFINEON TECHNOLOGIES AUSTRIA AG3HENSON TIMOTHY D1MA LING1
Top patents by PatentIndex Score
29 records- 0188US6380004B2Process for manufacturing radhard power integrated circuitINT RECTIFIER CORP·Filed 2001·Granted Apr 30, 2002·53 cites·16 claims
- 0284US9859407B2IGBT having deep gate trenchINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Jan 2, 2018·3 cites·20 claims
- 0384US9245985B2IGBT with buried emitter electrodeINT RECTIFIER CORP·Filed 2013·Granted Jan 26, 2016·5 cites·9 claims
- 0483US6529034B1Integrated series schottky and FET to allow negative drain voltageINT RECTIFIER CORP·Filed 2001·Granted Mar 4, 2003·28 cites·4 claims
- 0582US8878591B2Level shifter utilizing bidirectional signaling through a capacitive isolation barrierINT RECTIFIER CORP·Filed 2013·Granted Nov 4, 2014·4 cites·20 claims
- 0682US8860194B2Buck converter power packageMA LING·Filed 2012·Granted Oct 14, 2014·8 cites·21 claims
- 0782US5801418AHigh voltage power integrated circuit with level shift operation and without metal crossoverINT RECTIFIER CORP·Filed 1997·Granted Sep 1, 1998·55 cites·67 claims
- 0881US9299819B2Deep gate trench IGBTINT RECTIFIER CORP·Filed 2013·Granted Mar 29, 2016·4 cites·13 claims
- 0980US9496378B2IGBT with buried emitter electrodeINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Nov 15, 2016·2 cites·19 claims
- 1080US6707101B2Integrated series schottky and FET to allow negative drain voltageINT RECTIFIER CORP·Filed 2003·Granted Mar 16, 2004·23 cites·11 claims
- 1174US9590096B2Vertical FET having reduced on-resistanceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Mar 7, 2017·2 cites·20 claims
- 1271US8988128B2Level shifter having feedback signal from high voltage circuitINT RECTIFIER CORP·Filed 2013·Granted Mar 24, 2015·2 cites·20 claims
- 1369US2025151321A1Semiconductor device having a trench field electrode with a first section buried below a gate electrode a second section for contactingINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2025·Application pending·0 cites
- 1466US2022109068A1Field electrode termination structure for trench-based transistor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Application pending·0 cites
- 1565US5861657AGraded concentration epitaxial substrate for semiconductor device having resurf diffusionINT RECTIFIER CORP·Filed 1997·Granted Jan 19, 1999·27 cites·14 claims
- 1665US5801431AMOS gated semiconductor device with source metal covering the active gateINT RECTIFIER CORP·Filed 1997·Granted Sep 1, 1998·28 cites·16 claims
- 1761US11217690B2Trench field electrode termination structure for transistor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Jan 4, 2022·0 cites·16 claims
- 1858US5686754APolysilicon field ring structure for power ICINT RECTIFIER CORP·Filed 1996·Granted Nov 11, 1997·20 cites·14 claims
- 1955US7183626B2Passivation structure with voltage equalizing loopsINT RECTIFIER CORP·Filed 2004·Granted Feb 27, 2007·10 cites·15 claims
- 2052US5798538AIGBT with integrated controlINT RECTIFIER CORP·Filed 1995·Granted Aug 25, 1998·14 cites·39 claims
- 2151US9257983B2Level shifter utilizing a capacitive isolation barrierINT RECTIFIER CORP·Filed 2014·Granted Feb 9, 2016·0 cites·20 claims
- 2249US2017213909A1Method for Fabricating a Shallow and Narrow Trench FETINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Application pending·0 cites
- 2341US9991377B2Trench FET with ruggedness enhancement regionsINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2013·Granted Jun 5, 2018·0 cites·6 claims
- 2441US9818743B2Power semiconductor device with contiguous gate trenches and offset source trenchesINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2014·Granted Nov 14, 2017·0 cites·16 claims
- 2541US9653597B2Method for fabricating a shallow and narrow trench FET and related structuresHENSON TIMOTHY D·Filed 2010·Granted May 16, 2017·0 cites·5 claims
- 2640US10879230B2Schottky integrated high voltage terminations and related HVIC applicationsINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Dec 29, 2020·0 cites·20 claims
- 2732US2016172295A1Power FET Having Reduced Gate ResistanceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Application pending·0 cites
- 2831US8076672B2Passivation structure with voltage equalizing loopsRANJAN NIRAJ·Filed 2006·Granted Dec 13, 2011·0 cites·19 claims
- 2929US2017279449A1Single-Chip High Speed and High Voltage Level ShifterINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Application pending·0 cites
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