Inventor · disambiguated record
Yuki Niiyama
Also filed as: NIIYAMA YUKI
9 granted patents·2 pending applications·62 citations·filing 2007–2013
86Inventor score
Top patents by PatentIndex Score
11 records- 0189US7679104B2Vertical type semiconductor device and manufacturing method of the deviceFURUKAWA ELECTRIC CO LTD·Filed 2007·Granted Mar 16, 2010·16 cites·10 claims
- 0286US7812371B2GaN based semiconductor elementFURUKAWA ELECTRIC CO LTD·Filed 2009·Granted Oct 12, 2010·14 cites·12 claims
- 0385US8309988B2Field effect transistorNIIYAMA YUKI·Filed 2010·Granted Nov 13, 2012·9 cites·19 claims
- 0479US8093626B2Normally-off field effect transistor using III-nitride semiconductor and method for manufacturing such transistorNIIYAMA YUKI·Filed 2007·Granted Jan 10, 2012·10 cites·6 claims
- 0574US7821035B2ED inverter circuit and integrate circuit element including the sameFURUKAWA ELECTRIC CO LTD·Filed 2008·Granted Oct 26, 2010·6 cites·14 claims
- 0673US7855155B2Process for producing semiconductor device using optical absorption layerFURUKAWA ELECTRIC CO LTD·Filed 2009·Granted Dec 21, 2010·5 cites·15 claims
- 0766US7998848B2Method of producing field effect transistorFURUKAWA ELECTRIC CO LTD·Filed 2009·Granted Aug 16, 2011·2 cites·10 claims
- 0848US9048302B2Field effect transistor having semiconductor operating layer formed with an inclined side wallSATO YOSHIHIRO·Filed 2009·Granted Jun 2, 2015·0 cites·20 claims
- 0946US8350293B2Field effect transistor and method of manufacturing the sameFURUKAWA ELECTRIC CO LTD·Filed 2009·Granted Jan 8, 2013·0 cites·7 claims
- 1036US2013306980A1Nitride semiconductor device and manufacturing method thereofADVANCED POWER DEVICE RES ASS·Filed 2013·Application pending·0 cites
- 1132US2010219455A1Iii-nitride semiconductor field effect transistorNIIYAMA YUKI·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →