Inventor · disambiguated record
Catherine A. Dubourdieu
Also filed as: DUBOURDIEU CATHERINE · DUBOURDIEU CATHERINE A · DUBOURDIEU CATHERINE ANNE
10 granted patents·3 pending applications·39 citations·filing 2008–2021
86Inventor score
Files withIBM5DUBOURDIEU CATHERINE A4DANIELE STEPHANE1DUBOURDIEU CATHERINE1DUBOURDIEU CATHERINE ANNE1
Top patents by PatentIndex Score
13 records- 0191US8785995B2Ferroelectric semiconductor transistor devices having gate modulated conductive layerDUBOURDIEU CATHERINE A·Filed 2011·Granted Jul 22, 2014·17 cites·23 claims
- 0285US9299799B2Semiconductor devices containing an epitaxial perovskite/doped strontium titanate structureIBM·Filed 2014·Granted Mar 29, 2016·6 cites·10 claims
- 0382US9041082B2Engineering multiple threshold voltages in an integrated circuitDUBOURDIEU CATHERINE ANNE·Filed 2010·Granted May 26, 2015·8 cites·9 claims
- 0472US8389300B2Controlling ferroelectricity in dielectric films by process induced uniaxial strainDUBOURDIEU CATHERINE A·Filed 2010·Granted Mar 5, 2013·3 cites·15 claims
- 0561US8890112B2Controlling ferroelectricity in dielectric films by process induced uniaxial strainDUBOURDIEU CATHERINE A·Filed 2012·Granted Nov 18, 2014·1 cites·14 claims
- 0661US8559217B2Phase change material cell with stress inducer linerDUBOURDIEU CATHERINE A·Filed 2010·Granted Oct 15, 2013·2 cites·17 claims
- 0756US8154091B2Integrated electronic circuit including a thin film portion based on hafnium oxideDUBOURDIEU CATHERINE·Filed 2008·Granted Apr 10, 2012·2 cites·28 claims
- 0853US9590100B2Semiconductor devices containing an epitaxial perovskite/doped strontium titanate structureIBM·Filed 2016·Granted Mar 7, 2017·0 cites·15 claims
- 0951US11988904B2Slot waveguide for a phase shifter based on ferroelectric materialsIHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/ LEIBNIZ INST FUR INNOVATIVE MIKRO·Filed 2021·Granted May 21, 2024·0 cites·18 claims
- 1047US9159920B2Phase change material cell with piezoelectric or ferroelectric stress inducer linerIBM·Filed 2013·Granted Oct 13, 2015·0 cites·17 claims
- 1146US2015214323A1Engineering multiple threshold voltages in an integrated circuitIBM·Filed 2015·Application pending·0 cites
- 1241US2019245056A1Ferroelectric devices free of extended grain boundariesIBM·Filed 2018·Application pending·0 cites
- 1336US2011049512A1Method for developing thin film from oxide or silicate of hafnium nitride, coordination compound used in said method, and method for producing integrated electronic circuitDANIELE STEPHANE·Filed 2009·Application pending·0 cites
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