Inventor · disambiguated record
Shigeru Ishibashi
Also filed as: ISHIBASHI SHIGERU
10 granted patents·116 citations·filing 2000–2009
89Inventor score
Top patents by PatentIndex Score
10 records- 0191US7643345B2Semiconductor memory device which includes stacked gate having charge accumulation layer and control gateTOSHIBA KK·Filed 2007·Granted Jan 5, 2010·20 cites·18 claims
- 0287US6720606B1Dynamic semiconductor memory device having a trench capacitorTOSHIBA KK·Filed 2000·Granted Apr 13, 2004·39 cites·12 claims
- 0380US7816201B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2009·Granted Oct 19, 2010·7 cites·6 claims
- 0479US7569898B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Aug 4, 2009·7 cites·13 claims
- 0573US6696713B2Semiconductor memory provided with vertical transistor and method of manufacturing the sameTOSHIBA KK·Filed 2001·Granted Feb 24, 2004·20 cites·12 claims
- 0670US7606073B2Nonvolatile semiconductor memory with dummy cell which is absence of a source/drain regionTOSHIBA KK·Filed 2007·Granted Oct 20, 2009·3 cites·20 claims
- 0769US7721239B2Semiconductor integrated circuit with connecting lines for connecting conductive lines of a memory cell array to a driverTOSHIBA KK·Filed 2007·Granted May 18, 2010·4 cites·10 claims
- 0866US6858893B2Semiconductor memory having a pillar type trench dram cellTOSHIBA KK·Filed 2002·Granted Feb 22, 2005·11 cites·9 claims
- 0958US8154085B2Nonvolatile semiconductor memory has resistors including electrode layer formed on low resistance layer adjacent to mask filmISHIBASHI SHIGERU·Filed 2007·Granted Apr 10, 2012·3 cites·17 claims
- 1045US7586202B2Alignment sensing method for semiconductor deviceFUJITSU MICROELECTRONICS LTD·Filed 2002·Granted Sep 8, 2009·2 cites·2 claims
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