Inventor · disambiguated record
Simon Deleonibus
Also filed as: DELEONIBUS SIMON
25 granted patents·5 pending applications·590 citations·filing 1985–2014
96Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE22DELEONIBUS SIMON2A L EN ATOMIQUE AUX EN COMMISSARIAT1EFCIS1HAUMESSER PAUL-HENRI1
Top patents by PatentIndex Score
30 records- 0195US6091076AQuantum WELL MOS transistor and methods for making sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1997·Granted Jul 18, 2000·150 cites·18 claims
- 0292US6787845B2Metal source and drain mos transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Sep 7, 2004·69 cites·4 claims
- 0389US6562687B1MIS transistor and method for making same on a semiconductor substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2000·Granted May 13, 2003·89 cites·7 claims
- 0488US7666733B2Method for making a vertical MOS transistor with embedded gateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Feb 23, 2010·13 cites·10 claims
- 0584US5314832AProcess for the production of a high voltage MIS integrated circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1992·Granted May 24, 1994·62 cites·17 claims
- 0679US6867128B2Method for making an electronic component with self-aligned drain and gate, in damascene architectureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Mar 15, 2005·26 cites·11 claims
- 0779US6346450B1Process for manufacturing MIS transistor with self-aligned metal gridCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1997·Granted Feb 12, 2002·45 cites·22 claims
- 0877US7566922B2Field effect transistor with suitable source, drain and channel materials and integrated circuit comprising sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted Jul 28, 2009·7 cites·3 claims
- 0973US4592802AMethod of fabrication of aluminum contacts through a thick insulating layer in an integrated circuitEFCIS·Filed 1985·Granted Jun 3, 1986·46 cites·3 claims
- 1070US7678635B2Method of producing a transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Mar 16, 2010·4 cites·14 claims
- 1161US7022562B2Field-effect transistor with horizontal self-aligned gates and the production method thereforCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2002·Granted Apr 4, 2006·9 cites·21 claims
- 1258US6727179B2Method for creating an integrated circuit stage wherein fine and large patterns coexistCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Apr 27, 2004·6 cites·8 claims
- 1358US2014370678A1Method for producing a conductive nanoparticle memory deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Application pending·0 cites
- 1456US6150241AMethod for producing a transistor with self-aligned contacts and field insulationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1997·Granted Nov 21, 2000·16 cites·20 claims
- 1555US6998310B2Processes for making a single election transistor with a vertical channelCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2002·Granted Feb 14, 2006·8 cites·8 claims
- 1655US2013157426A1Method for producing a conductive nanoparticle memory deviceA L EN ATOMIQUE AUX EN COMMISSARIAT·Filed 2013·Application pending·0 cites
- 1754US8518816B2Method for making electrical interconnections with carbon nanotubesHAUMESSER PAUL-HENRI·Filed 2010·Granted Aug 27, 2013·1 cites·10 claims
- 1854US6955963B2Damascene architecture electronic storage and method for making sameST MICROELECTRONICS SA·Filed 2001·Granted Oct 18, 2005·7 cites·7 claims
- 1949US5897939ASubstrate of the silicon on insulator type for the production of transistors and preparation process for such a substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1997·Granted Apr 27, 1999·15 cites·17 claims
- 2047US5913136AProcess for making a transistor with self-aligned source and drain contactsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1997·Granted Jun 15, 1999·11 cites·10 claims
- 2144US8389368B2Method for producing a conductive nanoparticle memory deviceDELEONIBUS SIMON·Filed 2010·Granted Mar 5, 2013·0 cites·11 claims
- 2244US7820523B2Fabrication of active areas of different natures directly onto an insulator: application to the single or double gate MOS transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2004·Granted Oct 26, 2010·1 cites·23 claims
- 2343US7466019B2Rectangular semi-conducting support for microelectronics and method for making sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted Dec 16, 2008·0 cites·30 claims
- 2440US7425496B2Method for delineating a conducting element disposed on an insulating layer, device and transistor thus obtainedCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2004·Granted Sep 16, 2008·0 cites·11 claims
- 2539US7553693B2Method for making a field effect transistor with diamond-like carbon channel and resulting transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted Jun 30, 2009·0 cites·7 claims
- 2638US2007215941A1Semiconductor-On-Insulator Substrate Comprising A Buried Diamond-Like Carbon Layer And Method For Making SameUNIV JOSEPH FOURIER·Filed 2005·Application pending·0 cites
- 2736US2003132484A1Vertical mos transistor with buried gate and method for making sameFiled 2001·Application pending·0 cites
- 2835US5973365AMOS transistor and lateral insulating method of a MOS transistor active regionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1997·Granted Oct 26, 1999·5 cites·2 claims
- 2932US7425509B2Method for forming patterns aligned on either side of a thin filmCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2003·Granted Sep 16, 2008·0 cites·16 claims
- 3032US2007001239A1Mis transistor with self-aligned gate and method for making sameDELEONIBUS SIMON·Filed 2003·Application pending·0 cites
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