Inventor · disambiguated record
Tadao Hashimoto
Also filed as: HASHIMOTO TADAO
71 granted patents·22 pending applications·884 citations·filing 1986–2024
99Inventor score
Top patents by PatentIndex Score
93 records- 0198US8420041B2High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystalHASHIMOTO TADAO·Filed 2012·Granted Apr 16, 2013·17 cites·24 claims
- 0297US9790617B2Group III nitride bulk crystals and their fabrication methodSIXPOINT MAT INC·Filed 2015·Granted Oct 17, 2017·6 cites·20 claims
- 0397US6069394ASemiconductor substrate, semiconductor device and method of manufacturing the sameMATSUSHITA ELECTRONICS CORP·Filed 1998·Granted May 30, 2000·301 cites·9 claims
- 0496US8236267B2High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystalHASHIMOTO TADAO·Filed 2009·Granted Aug 7, 2012·19 cites·20 claims
- 0595US9441311B2Growth reactor for gallium-nitride crystals using ammonia and hydrogen chlorideSIXPOINT MAT INC·Filed 2014·Granted Sep 13, 2016·7 cites·14 claims
- 0695US8764903B2Growth reactor for gallium-nitride crystals using ammonia and hydrogen chlorideHASHIMOTO TADAO·Filed 2010·Granted Jul 1, 2014·7 cites·10 claims
- 0794US6249534B1Nitride semiconductor laser deviceMATSUSHITA ELECTRONICS CORP·Filed 1999·Granted Jun 19, 2001·109 cites·13 claims
- 0893US9243344B2Gallium nitride bulk crystals and their growth methodHASHIMOTO TADAO·Filed 2012·Granted Jan 26, 2016·4 cites·9 claims
- 0992US9909230B2Seed selection and growth methods for reduced-crack group III nitride bulk crystalsSIXPOINT MAT INC·Filed 2016·Granted Mar 6, 2018·4 cites·25 claims
- 1092US9670594B2Group III nitride crystals, their fabrication method, and method of fabricating bulk group III nitride crystals in supercritical ammoniaSIXPOINT MAT INC·Filed 2015·Granted Jun 6, 2017·2 cites·19 claims
- 1192US8357243B2Method for testing group III-nitride wafers and group III-nitride wafers with test dataSIXPOINT MATERIALS INC·Filed 2009·Granted Jan 22, 2013·15 cites·30 claims
- 1291US10287709B2Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication methodSIXPOINT MAT INC·Filed 2017·Granted May 14, 2019·3 cites·13 claims
- 1391US9822465B2Method of fabricating group III nitride with gradually degraded crystal structureSIXPOINT MAT INC·Filed 2015·Granted Nov 21, 2017·3 cites·21 claims
- 1491US9452495B1Laser slicer of crystal ingots and a method of slicing gallium nitride ingots using a laser slicerHASHIMOTO TADAO·Filed 2012·Granted Sep 27, 2016·11 cites·15 claims
- 1590US9305772B2Electronic device using group III nitride semiconductor having specified dislocation density, oxygen/electron concentration, and active layer thicknessSIXPOINT MATERIALS INC·Filed 2014·Granted Apr 5, 2016·7 cites·21 claims
- 1689US8585822B2Method for testing group III-nitride wafers and group III-nitride wafers with test dataSIXPOINT MATERIALS INC·Filed 2012·Granted Nov 19, 2013·7 cites·20 claims
- 1789US8557043B2Method for testing group III-nitride wafers and group III-nitride wafers with test dataSIXPOINT MATERIALS INC·Filed 2012·Granted Oct 15, 2013·7 cites·23 claims
- 1888US9518340B2Method of growing group III nitride crystalsSIXPOINT MAT INC·Filed 2013·Granted Dec 13, 2016·9 cites·21 claims
- 1988US9202872B2Method of growing group III nitride crystalsSIXPOINT MATERIALS INC·Filed 2013·Granted Dec 1, 2015·8 cites·10 claims
- 2088US8921231B2Group III nitride wafer and its production methodSIXPOINT MATERIALS INC·Filed 2013·Granted Dec 30, 2014·7 cites·20 claims
- 2188US7803344B2Method for growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and group III-nitride crystals grown therebyUNIV CALIFORNIA·Filed 2007·Granted Sep 28, 2010·5 cites·18 claims
- 2287US7755172B2Opto-electronic and electronic devices using N-face or M-plane GaN substrate prepared with ammonothermal growthUNIV CALIFORNIA·Filed 2007·Granted Jul 13, 2010·8 cites·23 claims
- 2386US8920762B2Synthesis method of transition metal nitride and transition metal nitrideHASHIMOTO TADAO·Filed 2012·Granted Dec 30, 2014·4 cites·17 claims
- 2486US8728234B2Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growthLETTS EDWARD·Filed 2009·Granted May 20, 2014·8 cites·9 claims
- 2586US8253221B2Gallium nitride bulk crystals and their growth methodHASHIMOTO TADAO·Filed 2008·Granted Aug 28, 2012·4 cites·13 claims
- 2684US9783910B2High pressure reactor and method of growing group III nitride crystals in supercritical ammoniaSIXPOINT MAT INC·Filed 2016·Granted Oct 10, 2017·1 cites·5 claims
- 2784US9543393B2Group III nitride wafer and its production methodSIXPOINT MAT INC·Filed 2013·Granted Jan 10, 2017·5 cites·22 claims
- 2884US9255342B2Bismuth-doped semi-insulating group III nitride wafer and its production methodSIXPOINT MATERIALS INC·Filed 2013·Granted Feb 9, 2016·5 cites·17 claims
- 2982US9349592B2Method for making electronic device using group III nitride semiconductor having specified dislocation density oxygen/electron concentration, and active layer thicknessSIXPOINT MATERIALS INC·Filed 2014·Granted May 24, 2016·3 cites·17 claims
- 3082US8852341B2Methods for producing GaN nutrient for ammonothermal growthLETTS EDWARD·Filed 2009·Granted Oct 7, 2014·4 cites·37 claims
- 3181US10024809B2Group III nitride wafers and fabrication method and testing methodSIXPOINT MAT INC·Filed 2015·Granted Jul 17, 2018·2 cites·18 claims
- 3281US8875630B2PrinterIZUME MASAYUKI·Filed 2009·Granted Nov 4, 2014·3 cites·7 claims
- 3380US10242868B1Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication methodSIXPOINT MAT INC·Filed 2017·Granted Mar 26, 2019·3 cites·15 claims
- 3479US9803293B2Method for producing group III-nitride wafers and group III-nitride wafersHASHIMOTO TADAO·Filed 2009·Granted Oct 31, 2017·2 cites·30 claims
- 3578US10141435B2Electronic device using group III nitride semiconductor and its fabrication methodSIXPOINT MAT INC·Filed 2017·Granted Nov 27, 2018·1 cites·16 claims
- 3678US10134884B2Electronic device using group III nitride semiconductor and its fabrication methodSIXPOINT MAT INC·Filed 2017·Granted Nov 20, 2018·1 cites·21 claims
- 3778US10134883B2Electronic device using group III nitride semiconductor and its fabrication methodSIXPOINT MAT INC·Filed 2017·Granted Nov 20, 2018·1 cites·22 claims
- 3878US6593159B1Semiconductor substrate, semiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jul 15, 2003·26 cites·11 claims
- 3977US9834863B2Group III nitride bulk crystals and fabrication methodSIXPOINT MAT INC·Filed 2015·Granted Dec 5, 2017·1 cites·28 claims
- 4077US9466481B2Electronic device and epitaxial multilayer wafer of group III nitride semiconductor having specified dislocation density, oxygen/electron concentration, and active layer thicknessSIXPOINT MAT INC·Filed 2014·Granted Oct 11, 2016·2 cites·20 claims
- 4174US8971018B2Ultracapacitors using transition metal nitride-containing electrode and transition metal nitrideHASHIMOTO TADAO·Filed 2012·Granted Mar 3, 2015·1 cites·28 claims
- 4273US9224817B2Composite substrate of gallium nitride and metal oxideSIXPOINT MATERIALS INC·Filed 2013·Granted Dec 29, 2015·2 cites·18 claims
- 4372US10156530B2Group III nitride wafers and fabrication method and testing methodSIXPOINT MAT INC·Filed 2015·Granted Dec 18, 2018·1 cites·19 claims
- 4472US9551088B2Method for growing group III-nitride crystals in supercritical ammonia using an autoclaveUNIV CALIFORNIA·Filed 2014·Granted Jan 24, 2017·0 cites·16 claims
- 4572US5550992ATransmission timing control in a base station for cellular TDMA mobile communication by receiving an up-link signal for a different base stationNEC CORP·Filed 1993·Granted Aug 27, 1996·49 cites·12 claims
- 4672US2013216845A1High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitride crystals using high-pressure vessel and group iii nitride crystalSIXPOINT MATERIALS INC·Filed 2013·Application pending·0 cites
- 4772US2013206057A1High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitride crystals using high-pressure vessel and group iii nitride crystalSIXPOINT MATERIALS INC·Filed 2013·Application pending·0 cites
- 4871US9685327B2Electronic device using group III nitride semiconductor and its fabrication method and an epitaxial multi-layer wafer for making itSIXPOINT MAT INC·Filed 2014·Granted Jun 20, 2017·1 cites·18 claims
- 4970US10087548B2High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystalSIXPOINT MAT INC·Filed 2015·Granted Oct 2, 2018·0 cites·20 claims
- 5070US9673044B2Group III nitride substrates and their fabrication methodSIXPOINT MAT INC·Filed 2015·Granted Jun 6, 2017·1 cites·21 claims
Showing the top 50 of 93 patent records by PatentIndex Score.
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