Assignee
SIXPOINT MATERIALS INC
US·9 granted patents·8 pending applications·61 citations·filing 2009–2015
Top patents by PatentIndex Score
17 records- 0192US8357243B2Method for testing group III-nitride wafers and group III-nitride wafers with test dataSIXPOINT MATERIALS INC·Filed 2009·Granted Jan 22, 2013·15 cites·30 claims
- 0290US9305772B2Electronic device using group III nitride semiconductor having specified dislocation density, oxygen/electron concentration, and active layer thicknessSIXPOINT MATERIALS INC·Filed 2014·Granted Apr 5, 2016·7 cites·21 claims
- 0389US8585822B2Method for testing group III-nitride wafers and group III-nitride wafers with test dataSIXPOINT MATERIALS INC·Filed 2012·Granted Nov 19, 2013·7 cites·20 claims
- 0489US8557043B2Method for testing group III-nitride wafers and group III-nitride wafers with test dataSIXPOINT MATERIALS INC·Filed 2012·Granted Oct 15, 2013·7 cites·23 claims
- 0588US9202872B2Method of growing group III nitride crystalsSIXPOINT MATERIALS INC·Filed 2013·Granted Dec 1, 2015·8 cites·10 claims
- 0688US8921231B2Group III nitride wafer and its production methodSIXPOINT MATERIALS INC·Filed 2013·Granted Dec 30, 2014·7 cites·20 claims
- 0784US9255342B2Bismuth-doped semi-insulating group III nitride wafer and its production methodSIXPOINT MATERIALS INC·Filed 2013·Granted Feb 9, 2016·5 cites·17 claims
- 0882US9349592B2Method for making electronic device using group III nitride semiconductor having specified dislocation density oxygen/electron concentration, and active layer thicknessSIXPOINT MATERIALS INC·Filed 2014·Granted May 24, 2016·3 cites·17 claims
- 0973US9224817B2Composite substrate of gallium nitride and metal oxideSIXPOINT MATERIALS INC·Filed 2013·Granted Dec 29, 2015·2 cites·18 claims
- 1072US2013216845A1High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitride crystals using high-pressure vessel and group iii nitride crystalSIXPOINT MATERIALS INC·Filed 2013·Application pending·0 cites
- 1172US2013206057A1High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitride crystals using high-pressure vessel and group iii nitride crystalSIXPOINT MATERIALS INC·Filed 2013·Application pending·0 cites
- 1269US2016010238A1Method of growing group iii nitride crystals using high pressure vesselSIXPOINT MATERIALS INC·Filed 2015·Application pending·0 cites
- 1369US2014326175A1Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystalsSIXPOINT MATERIALS INC·Filed 2014·Application pending·0 cites
- 1458US2014209925A1Methods for producing improved crystallinity group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growthSIXPOINT MATERIALS INC·Filed 2014·Application pending·0 cites
- 1547US2016076169A1Substrates for growing group iii nitride crystals and their fabrication methodSIXPOINT MATERIALS INC·Filed 2015·Application pending·0 cites
- 1647US2016076168A1Substrates for growing group iii nitride crystals and their fabrication methodSIXPOINT MATERIALS INC·Filed 2015·Application pending·0 cites
- 1741US2015275391A1High pressure reactor for supercritical ammoniaSIXPOINT MATERIALS INC·Filed 2015·Application pending·0 cites
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