Inventor · disambiguated record
Toshihiro Ohki
Also filed as: OHKI TOSHIHIRO
42 granted patents·22 pending applications·162 citations·filing 2004–2025
97Inventor score
Top patents by PatentIndex Score
64 records- 0196US7955984B2High speed high power nitride semiconductor deviceFUJITSU LTD·Filed 2007·Granted Jun 7, 2011·41 cites·9 claims
- 0295US8883581B2Compound semiconductor device and method for manufacturing the sameTRANSPHORM JAPAN INC·Filed 2013·Granted Nov 11, 2014·20 cites·19 claims
- 0392US9093512B2Compound semiconductor deviceOHKI TOSHIHIRO·Filed 2011·Granted Jul 28, 2015·15 cites·10 claims
- 0491US9099351B2Compound semiconductor device and method of manufacturing the sameTRANSPHORM JAPAN INC·Filed 2013·Granted Aug 4, 2015·13 cites·7 claims
- 0588US8866157B2Semiconductor device and method of fabricating the semiconductor deviceFUJITSU LTD·Filed 2013·Granted Oct 21, 2014·9 cites·20 claims
- 0686US9553152B2Semiconductor deviceFUJITSU LTD·Filed 2014·Granted Jan 24, 2017·8 cites·10 claims
- 0782US9379229B2Semiconductor apparatus including protective film on gate electrode and method for manufacturing the semiconductor apparatusOHKI TOSHIHIRO·Filed 2012·Granted Jun 28, 2016·5 cites·9 claims
- 0880US7948062B2Semiconductor device and method for manufacturing semiconductor deviceFUJITSU LTD·Filed 2008·Granted May 24, 2011·6 cites·18 claims
- 0979US9035353B2Compound semiconductor device comprising electrode above compound semiconductor layer and method of manufacturing the sameOHKI TOSHIHIRO·Filed 2012·Granted May 19, 2015·5 cites·17 claims
- 1079US8003452B2Compound semiconductor device and manufacturing method thereofFUJITSU LTD·Filed 2009·Granted Aug 23, 2011·7 cites·20 claims
- 1178US9608083B2Semiconductor deviceFUJITSU LTD·Filed 2015·Granted Mar 28, 2017·2 cites·10 claims
- 1276US8426260B2Compound semiconductor device and method of manufacturing the sameMIYAJIMA TOYOO·Filed 2011·Granted Apr 23, 2013·5 cites·16 claims
- 1376US8278688B2Compound semiconductor device and manufacturing method thereofOHKI TOSHIHIRO·Filed 2009·Granted Oct 2, 2012·6 cites·14 claims
- 1474US9496380B2Compound semiconductor device comprising compound semiconductor layered structure having buffer layer and method of manufacturing the sameMINOURA YUICHI·Filed 2011·Granted Nov 15, 2016·3 cites·15 claims
- 1569US8969919B2Field-effect transistorOHKI TOSHIHIRO·Filed 2011·Granted Mar 3, 2015·2 cites·5 claims
- 1669US8030686B2Semiconductor device and method for manufacturing the sameFUJITSU LTD·Filed 2009·Granted Oct 4, 2011·3 cites·8 claims
- 1767US8389351B2Method for fabricating semiconductor deviceOHKI TOSHIHIRO·Filed 2011·Granted Mar 5, 2013·2 cites·20 claims
- 1867US2023275001A1Semiconductor device, semiconductor device fabrication method, and electronic deviceFUJITSU LTD·Filed 2023·Application pending·0 cites
- 1966US12193151B2High-frequency circuit board and antenna moduleFUJITSU LTD·Filed 2023·Granted Jan 7, 2025·0 cites·9 claims
- 2066US9269782B2Semiconductor deviceKANAMURA MASAHITO·Filed 2012·Granted Feb 23, 2016·2 cites·18 claims
- 2164US12369345B2Compound semiconductor device, amplifier, and method for manufacturing compound semiconductor deviceFUJITSU LTD·Filed 2022·Granted Jul 22, 2025·0 cites·19 claims
- 2264US11688663B2Semiconductor device, semiconductor device fabrication method, and electronic deviceFUJITSU LTD·Filed 2020·Granted Jun 27, 2023·0 cites·10 claims
- 2362US8809136B2Semiconductor device and method for manufacturing the sameOHKI TOSHIHIRO·Filed 2011·Granted Aug 19, 2014·1 cites·12 claims
- 2462US8791465B2Compound semiconductor device and manufacturing thereforOKAMOTO NAOYA·Filed 2012·Granted Jul 29, 2014·1 cites·8 claims
- 2562US8709886B2Compound semiconductor device and manufacturing method thereforMAKIYAMA KOZO·Filed 2012·Granted Apr 29, 2014·1 cites·6 claims
- 2662US2025096180A1Semiconductor device, wireless communication device, and method for fabricating semiconductor deviceFUJITSU LTD·Filed 2024·Application pending·0 cites
- 2758US11088044B2Compound semiconductor device and fabrication method therefor, and amplifierFUJITSU LTD·Filed 2019·Granted Aug 10, 2021·0 cites·12 claims
- 2858US9123793B2Method for manufacturing semiconductor apparatus having fluorine containing region formed in recessed portion of semiconductor layerFUJITSU LTD·Filed 2014·Granted Sep 1, 2015·0 cites·11 claims
- 2958US7220628B2Semiconductor device and manufacturing method thereof, and gate electrode and manufacturing method thereofFUJITSU LTD·Filed 2004·Granted May 22, 2007·5 cites·50 claims
- 3057US2024213360A1Semiconductor device, semiconductor device manufacturing method, and electronic deviceFUJITSU LTD·Filed 2023·Application pending·0 cites
- 3156US9257514B2Semiconductor device with plural electrodes formed on substrateFUJITSU LTD·Filed 2014·Granted Feb 9, 2016·0 cites·3 claims
- 3255US2024162340A1Semiconductor device and manufacturing methodFUJITSU LTD·Filed 2023·Application pending·0 cites
- 3354US9209042B2Compound semiconductor device and manufacturing method thereforOKAMOTO NAOYA·Filed 2014·Granted Dec 8, 2015·0 cites·5 claims
- 3453US9035357B2Compound semiconductor device and manufacturing method thereforFUJITSU LTD·Filed 2014·Granted May 19, 2015·0 cites·7 claims
- 3552US11387357B2Compound semiconductor device, method for manufacturing the same and amplifierFUJITSU LTD·Filed 2020·Granted Jul 12, 2022·0 cites·11 claims
- 3652US9685547B2Semiconductor apparatus including barrier film provided between electrode and protection filmFUJITSU LTD·Filed 2016·Granted Jun 20, 2017·0 cites·10 claims
- 3752US9647084B2Semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2015·Granted May 9, 2017·0 cites·7 claims
- 3852US2023317839A1Semiconductor device, semiconductor device manufacturing method, and electronic deviceFUJITSU LTD·Filed 2022·Application pending·0 cites
- 3951US8829569B2Semiconductor apparatus having fluorine containing region formed in recessed portion of semiconductor layerOHKI TOSHIHIRO·Filed 2011·Granted Sep 9, 2014·0 cites·8 claims
- 4051US2009140262A1Field-effect transistorFUJITSU LTD·Filed 2009·Application pending·0 cites
- 4150US10483185B2Semiconductor device and method for manufacturing sameFUJITSU LTD·Filed 2018·Granted Nov 19, 2019·0 cites·13 claims
- 4250US2023163206A1Semiconductor device and method for manufacturing semiconductor deviceFUJITSU LTD·Filed 2022·Application pending·0 cites
- 4349US9564527B2Semiconductor device and manufacturing method of semiconductor deviceFUJITSU LTD·Filed 2013·Granted Feb 7, 2017·0 cites·8 claims
- 4449US2021384340A1Semiconductor device and manufacturing methodFUJITSU LTD·Filed 2021·Application pending·0 cites
- 4549US2025309154A1Semiconductor deviceFUJITSU LTD·Filed 2025·Application pending·0 cites
- 4648US10964805B2Compound semiconductor deviceFUJITSU LTD·Filed 2019·Granted Mar 30, 2021·0 cites·11 claims
- 4748US2012139630A1Compound semiconductor device and method of manufacturing the sameOZAKI SHIROU·Filed 2011·Application pending·0 cites
- 4848US2012091522A1Semiconductor device and manufacturing method thereofOZAKI SHIROU·Filed 2011·Application pending·0 cites
- 4948US2017104098A1Semiconductor deviceFUJITSU LTD·Filed 2016·Application pending·0 cites
- 5046US2015194514A1Compound semiconductor device having a gate electrode and method of manufacturing the sameFUJITSU LTD·Filed 2015·Application pending·0 cites
Showing the top 50 of 64 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →